TGS 1N60P

TIGER ELECTRONIC CO.,LTD
1N60
1N60P
Features
•
•
•
•
High Reliability
Low Reverse Current and Low Forward Voltage
Marking : Cathode band and type number
Moisture Sensitivity: Level 1 per J-STD-020C
Schottky Barrier
Rectifier
Maximum Ratings
•
DO-35
Storage &Operating JunctionTemperature: -65℃ to +125℃
Electrical Characteristics @ 25°C Unless Otherwise Specified
Parameter
Repetitive
Peak Reverse
Voltage
Average
Forward
Current
Peak Forward
Surge Current
Junction
Ambient
Note:
Symbol
VRRM
IF(AV)
IFSM
RthJA
Type
1N60
Value
40V
1N60P
45V
1N60
30mA
Ta = 25℃
1N60P
50mA
Ta = 25℃
1N60
1N60P
150mA
500mA
tp≦1s
tp≦1s
On PC board
50mm×50mm
×1.6mm
250K/W
Test Condition
D
A
Cathode
Mark
B
D
1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
C
DIMENSIONS
DIM
A
B
C
D
INCHES
MIN
------1.000
MAX
.166
.079
.020
---
MM
MIN
------25.40
MAX
4.2
2.00
.52
---
NOTE
1N60, 1N60P
Electrical Characteristics @ 25°C Unless Otherwise Specified
Parameter
Test Conditions
IF=1mA
Forward voltage
Reverse current
Junction capacitance
Reverse recovery time
IF=30mA
IF=200mA
VR=15V
VR=1V, f=1MHz
VR=10V, f=1MHz
IF=IR=1mA, Irr=1mA
RC=100Ω
Type
1N60
1N60P
1N60
1N60P
1N60
1N60P
1N60
1N60P
Symbol
VF
VF
VF
VF
IR
IR
CJ
CJ
Min
-----------------
Typ
0.32
0.24
0.65
0.65
0.1
0.5
2.0
6.0
Max
0.5
0.5
1.0
1.0
0.5
1.0
-----
Unit
V
V
V
V
μA
μA
pF
pF
trr
---
---
1.0
ns