TIGER ELECTRONIC CO.,LTD Product specification 2SB546A / 2SD401A Complementary Silicon Power Ttransistors O ( Ta = 25 C) DESCRIPTION The 2SB546A and 2SD401A are high voltage triple diffused silicon transistors, These devices are designed for use in line-operated color TV vertical defiection of complementary symmetry circuit, The 2SB546A and 2SD401A are complementary transistors, consisting of straight leads Parameter Symbol Value Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 V IC 2.0 A IC(peak) 3.0 A Ptot 30 Collector Current Collector Peak Current Total Dissipation at Max. Operating Junction Temperature Storage Temperature W Tj 150 o Tstg -55~150 o C TO-220 C ELECTRICAL CHARACTERISTICST SEMICONDUCTOR CO., LTD Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cutoff Current ICBO VCB=150V, IE=0 — — 50 uA Emitter Cut-off Current IEBO VEB=4.0V, IC=0 — — 50 uA Collector-Emitter Sustaining Voltage VCEO IC=10mA, IB=0 150 — — V DC Current Gain hFE(1) VCE=10V, IC=400mA 40 — — VCE(sat) IC=500mA,IB=50mA — — 2.0 V VCB=10V,f=1.0MHz, IE=0 — 75/45 — pF VCE=10V,IC=400mA — 7.0 — MHz Collector-Emitter Saturation Voltage Collector capacitance Transition Frequency CC fT