TIGER ELECTRONIC CO.,LTD Product specification 2SC2314 NPN EPITAXIAL PLANAR SILICON TRANSISTORS DESCRIPTION 27 MHz CB Transceiver Driver Applications O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter l Value Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5.0 V IC 1.0 A ICP 1.5 A Ptot 5.0 W Tj 150 o Tstg -55~150 o Collector Current Total Dissipation at Max. Operating Junction Temperature Storage Temperature C C TO-126 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB=40V, IE=0 — — 1.0 uA Emitter Cut-off Current IEBO VEB=4.0V, IC=0 — — 1.0 uA Collector-Emitter Sustaining Voltage VCEO IC=1.0mA, IB=0 45 — — V VCE=5V, IC=0.5A 60 — 320 Collector-Emitter Saturation Voltage VCE(sat) IC=0.5A,IB=50mA — — 0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=0.5A,IB=50mA — — 1.2 V 180 — — MHz 25 pF DC Current Gain Current Gain Bandwidth Product Qutput Capacitance hFE fT VCE=10V,IC=50mA Cob VCB=10V,f=10MHz Hfe Classification: D=60~120 , E=100-200, F=160-320