Advance Product Information September 15, 2004 Wideband Packaged HPA with AGC TGA2509-EPU-FL Key Features • • • • • • • Frequency Range: 2-20 GHz 29 dBm Nominal P1dB 15 dB Nominal Gain, Midband 25dB AGC Range 10 lead flange package style Bias Conditions: Vd = 12 V, Idq = 1.1 A Package Dimensions: 0.7 x 0.3 x 0.1 in. LOT CODE Primary Applications • • • • Wideband Power Amp Military EW and ECM Test Equipment VSAT and Digital Radio Measured Fixtured Data Product Description Bias Conditions: Vd =12 V, Id= 1.1 A 20 20 16 16 Gain 12 8 8 4 4 0 0 -4 -4 Input -8 -8 -12 The TGA2509-EPU-FL is suitable for a variety of applications such as wideband electronic warfare systems, test equipment and VSAT and Digital Radio. The flange lead package has a high thermal conductivity copper alloy base. -12 -16 -16 Output -20 Return Loss (dB) 12 Gain (dB) The TriQuint TGA2509-EPU-FL is a Wideband High Power Amplifier with 25 dB AGC range. The HPA operates from 2-20 GHz and provides 29dBm of output power at 1 dB gain compression with small signal gain of 15 dB. -20 -24 -24 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency (GHz) 34 Output Power (dBm) 32 Evaluation Boards are available. 30 28 26 24 22 20 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES 12.5 V 2/ V+ Positive Supply Voltage Vg1 Gate 1 Supply Voltage Range -2V TO 0 V Vg2 Gate 2 Supply Voltage Range -2V TO 0 V Vc AGC Control Voltage Range Vc < +5 V + V –Vc < 14V I + Positive Supply Current 1.4 A | IG | Gate Supply Current 70 mA PIN Input Continuous Wave Power 30 dBm 2/ PD Power Dissipation (without using AGC) 13.2 W 2/, 3/ PD Power Dissipation (when Vc < +2V) 10.6 W 2/, 3/ TCH Operating Channel Temperature 150 °C 4/, 5/ TM Mounting Temperature (30 Seconds) 210 °C TSTG Storage Temperature 2/ -65 to 150 °C 1/ These ratings represent the maximum operable values for this device. 2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ When operated at this power dissipation with a base plate temperature of 60 °C, the median life is 1 E+6 hours. 4/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ These ratings apply to each individual FET. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL TABLE II RF CHARACTERIZATION TABLE (TA = 25 °C, Nominal) Vd = 12 V, Id = 1.08 A SYMBOL PARAMETER TEST CONDITION NOMINAL UNITS Gain Small Signal Gain f = 2-20 GHz 15 dB IRL Input Return Loss f = 2-20 GHz 10 dB ORL Output Return Loss f = 2-20 GHz 12 dB Output Power @ 1dB Gain Compression f = 2-20 GHz 29 dBm P1dB TABLE III THERMAL INFORMATION Parameter RθJC Thermal Resistance (channel to backside of package) RθJC Thermal Resistance (channel to backside of package) Test Conditions Vd = 12 V ID = 1.08 A Pdiss = 13.2 W (without using AGC) Vd = 12 V ID = 0.88 A Pdiss = 10.6 W (when using AGC) TCH (oC) RTJC (qC/W) TM (HRS) 150 6.4 1 E+6 150 8.3 1 E+6 Note: Package attached with mounting hardware and metal shim (Al or In) to carrier at 65°C baseplate temperature. Worst case is at saturated output power when DC power consumption rises to 15 W with 1 W RF power delivered to load. Power dissipated is 14 W and the temperature rise in the channel is 90 °C. Baseplate temperature must be reduced to 60 °C to remain below the 150 °C maximum channel temperature. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Typical Fixtured Performance Bias Conditions: Vd = 12V, Id = 1.08A, Vg1 = -0.28V Typical, Vg2 = -0.35V Typical, Vc (optional) = 2.6V Typical 20 20 16 16 Gain 12 8 8 4 4 0 0 -4 -4 Input -8 -8 -12 -12 -16 -16 Output -20 -20 -24 -24 0 2 4 6 8 10 12 14 16 18 20 22 24 Return Loss (dB) Gain (dB) 12 26 Frequency (GHz) 20 Vc=2.6v 15 Gain (dB) Vc=2.0v 10 Vc=1.5v 5 Vc=1.0v 0 Vc=0.5v Vc=0v -5 Vc=-0.25v -10 Vc=-0.50v -15 Vc=-0.75v 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Typical Fixtured Performance Gain (dB) Bias Conditions: Vd = 12V, Id = 1.08A, Vg1 = -0.28V Typical, Vg2 = -0.35V Typical, Vc (optional) = 2.6V Typical 24 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency (GHz) 5v600mA 5v800mA 5v1000mA 7v600mA 7v1000mA 9v600mA 9v800mA 9v1000mA 7v800mA 20 18 Gain (dB) 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) -55 deg-C -40 deg-C -20 deg-C 0 deg-C +25 deg-C +45 deg-C +65 deg-C Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Typical Fixtured Performance Bias Conditions: Vd = 12V, Id = 1.08A, Vg1 = -0.28V Typical, Vg2 = -0.35V Typical, Vc (optional) = 2.6V Typical Output Power @ P1dB (dBm) 34 32 30 28 26 24 22 20 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) Output Power@ P1dB (dBm) 32 30 28 26 24 22 20 18 2 4 6 8 10 12 14 16 18 20 22 Frequency (GHz) 9v1000ma 9v800ma 9v600ma 7v1000ma 7v600ma 5v1000ma 5v800ma 5v600ma 7v800ma Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Typical Fixtured Performance Bias Conditions: Vd = 12V, Id = 1.08A, Vg1 = -0.28V Typical, Vg2 = -0.35V Typical, Vc (optional) = 2.6V Typical Output Power @ P1dB (dBm) 32 30 28 26 24 22 20 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) -50 deg-C -40 deg-C -20 deg-C 0 deg-C +25 deg-C +45 deg-C +65 deg-C Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Typical Fixtured Performance 35 1700 32 1600 29 1500 26 1400 23 1300 20 1200 17 1100 14 1000 11 900 8 800 5 700 8 9 10 11 12 13 14 15 16 17 18 IDS (mA) Output Power (dBm) Bias Conditions: Vd = 12V, Id = 1.08A, Vg1 = -0.28V Typical, Vg2 = -0.35V Typical, Vc (optional) = 2.6V Typical 19 Pin (dBm) 8GHz_Pout 14GHz_Id 14GHz_Pout 20GHz_Id 20GHz_Pout 2GHz_Id 20 1700 18 1600 16 1500 14 1400 12 1300 10 1200 8 1100 6 1000 4 900 2 800 0 700 8 9 10 11 12 13 14 15 16 17 18 IDS (mA) Gain (dB) 2GHz_Pout 8GHz_Id 19 Pin (dBm) 2GHz Gain 8GHz_Id 8GHz_Gain 14GHz_Id 14_GHz_Gain 20GHz_Id 20GHz_Gain 2GHz_Id Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Package Dimensional Drawing 9* 1& 1& 1& 5)287 5),1 [ [ 1& 9' /($':,'7+$1'/(1*7+ 9& 9* ; [ Note: Units are in inches. Package size tolerance ± 0.005 in. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Evaluation Board Drawing Vg1 RF In RF Out Vd Vc Vg2 Bias Procedures: Vc bias connection is optional, but the 0.1uF cap always needs to be connected. For biasing without AGC control: 1. Apply -1.2V to Vg1, and -1.2V to Vg2. 2. Apply +12V to Vd. 4. Adjust Vg1 to attain 580 mA drain current (Id) 4. Adjust Vg2 to attain 1080 mA total drain current (Id). For biasing with AGC control: 1. Apply -1.2V to Vg1 and -1.2V to Vg2 2. Apply +12V to Vd 3. Apply +2.6V to Vc 4. Adjust Vg1 to attain 580 mA drain current (Id) 5. Adjust Vg2 to attain 1080 mA total drain current (Id). 6. Adjust Vc as needed to control gain level. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 10 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Typical Evaluation Board Layout * 33uF Vg1 1 2 3 TGA2509 DATE CODE LOT CODE 11 5 7 8 6 4 9 10 Vc Vg2 Vd 33uF 33uF COMPONENT 1, 4, 9,10 2, 5, 8 3, 6, 7 11 VALUE 1 uF 10 Ω 0.01 uF 100 Ω GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 11 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 15, 2004 TGA2509-EPU-FL Assembly of a TGA2509-EPU Flange Mount Package onto a Motherboard Manual Assembly for Prototypes 1. Clean the motherboard or the similar module with Acetone. Rinse with alcohol and DI water. Allow the circuit to fully dry. 2. To improve the thermal and RF performance, TriQuint recommends using two # 0-80 bolts to attach a heat sink to the bottom of the package with an indium alloy preform, or equivalent, between the two. 3. Apply Tin/Lead solder, or equivalent, to each active pin of the TGA2509. 4 Clean the assembly with alcohol. Ordering Information Part TG2509-EPU-FL Package Style Flange (Leads bolted down) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 12 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com