UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220F1 FEATURES * RDS(ON) = 0.8Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness TO-220 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. 1 1 TO-262 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 12N60L-TA3-T 12N60G-TA3-T TO-220 12N60L-TF1-T 12N60G-TF1-T TO-220F1 12N60L-TF3-T 12N60G-TF3-T TO-220F 12N60L-T2Q-T 12N60G-T2Q-T TO-262 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube 1 of 7 QW-R502-170.I 12N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 12 A 12 A Continuous ID Drain Current Pulsed (Note 2) IDM 48 A 790 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 24 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 / TO-262 225 W Power Dissipation PD TO-220F / TO-220F1 51 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient TO-220 / TO-262 Junction to Case TO-220F/TO-220F1 SYMBOL θJA θJC RATING 62.5 0.56 2.43 UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-State Resistance RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN TYP MAX UNIT VGS = 0 V, ID = 250 µA 600 VDS = 600 V, VGS = 0 V VGS = ±30 V, VDS = 0 V ID=250µA, Referenced to 25°C V 1 µA ±100 nA 0.7 V/°C VDS = VGS, ID = 250μA VGS = 10V, ID = 6.0A 0.6 VDS = 25 V, VGS = 0 V, f = 1MHz VDS =0V, VGS =0V, f =1MHz 2.0 4.0 0.8 V Ω 1480 1900 200 270 25 35 0.2 1.2 pF pF pF Ω 2 of 7 QW-R502-170.I 12N60 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 300V, ID = 12A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 480V,ID= 12A, Gate-Source Charge QGS VGS= 10 V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 12A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0 V, IS = 12A, dIF/dt = 100 A/µs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 30 115 95 85 42 8.6 21 380 3.5 70 240 200 180 54 ns ns ns ns nC nC nC 1.4 V 12 A 48 A ns µC 3 of 7 QW-R502-170.I 12N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-170.I 12N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit 12V Same Type as D.U.T. 50kΩ 0.2μF Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT 3mA VGS Charge Gate Charge Test Circuit Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveform Unclamped Inductive Switching Waveforms 5 of 7 QW-R502-170.I 12N60 Power MOSFET TYPICAL CHARACTERISTICS Transfer Characteristics On-Resign Characteristics Top: VGS 15V 10V 101 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V 101 25°C -55°C 10 0 10 Notes: 250µs Pulse Test TC=25°C 10-1 150°C 100 101 Drain-Source Voltage, VGS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 Notes: 1.VDS=50V 2.250µs Pulse Test 10-1 2 4 6 8 Gate-Source Voltage, VGS (V) 10 6 of 7 QW-R502-170.I 12N60 TYPICAL CHARACTERISTICS Thermal Response, ZθJC(t) Drain Current, ID (A) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-170.I