UTC-IC 1N60ZL-T92-R

UNISONIC TECHNOLOGIES CO., LTD
1N60Z
Power MOSFET
1.2A, 600V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 1N60Z is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used at high
speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
„
FEATURES
* RDS(ON) [email protected] = 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N60ZL-T92-B
1N60ZG-T92-B
1N60ZL-T92-K
1N60ZG-T92-K
1N60ZL-T92-R
1N60ZG-T92-R
1N60ZL-TN3-R
1N60ZG-TN3-R
1N60ZL-TN3-T
1N60ZG-TN3-T
Note: Pin Assignment: G: Gate
D: Drain S: Source
1N60ZL-T92-B
Package
TO-92
TO-92
TO-92
TO-252
TO-252
1
G
G
G
G
G
Pin Assignment
2
3
D
S
D
S
D
S
D
S
D
S
(1)Packing Type
(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube
(2)Package Type
(2) T92: TO-92, TN3: TO-252
(3)Lead Free
(3) G: Halogen Free, L: Lead Free
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Packing
Tape Box
Bulk
Tape Reel
Tape Reel
Tube
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QW-R502-724.C
1N60Z
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±20
V
Avalanche Current (Note 2)
IAR
1.2
A
Continuous Drain Current
ID
1.2
A
Pulsed Drain Current (Note 2)
IDM
4.8
A
Single Pulsed (Note 3)
EAS
50
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
4.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
1
TO-92
Power Dissipation (TA=25℃)
W
PD
TO-252
1.5
Junction Temperature
TJ
+150
℃
℃
Operating Temperature
TOPR
-55 ~ +150
Storage Temperature
TSTG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
„
THERMAL DATA
PARAMETER
Junction to Ambient
„
SYMBOL
TO-92
TO-252
θJA
RATINGS
140
100
UNIT
℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
VGS=0V, ID=250μA
VDS=600V, VGS=0V
Forward
VGS=20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=0.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=300V, ID=1.2A, RG=50Ω
(Note 2,3)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=480V, VGS=10V,
Gate-Source Charge
QGS
ID=1.2A (Note 2,3)
Gate-Drain Charge
QGD
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
600
10
+5
-5
V
μA
μA
μA
V/℃
9.3
4.0
11.5
V
Ω
120
20
3.0
150
25
4.0
pF
pF
pF
5
25
7
25
5.0
1.0
2.6
20
60
25
60
6.0
ns
ns
ns
ns
nC
nC
nC
0.4
2.0
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QW-R502-724.C
1N60Z
„
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS =1.2A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS=0V, IS=1.2A
dIF/dt=100A/μs (Note 1)
Reverse Recovery Charge
QRR
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
160
0.3
1.4
V
1.2
A
4.8
A
ns
μC
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QW-R502-724.C
1N60Z
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-724.C
1N60Z
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
„
Switching Test Circuit
12V
Same Type
as D.U.T.
50kΩ
0.2μF
Switching Waveforms
QG
10V
0.3μF
VDS
QGS
QGD
VGS
DUT
3mA
VGS
Charge
Gate Charge Test Circuit
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Gate Charge Waveform
Unclamped Inductive Switching Waveforms
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QW-R502-724.C
1N60Z
Drain Current,ID (µA)
Drain Current, ID (A)
Drain Current,ID (mA)
TYPICAL CHARACTERISTICS
Drain Current,ID (µA)
„
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-724.C