UNISONIC TECHNOLOGIES CO., LTD 2N7002W Preliminary Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N7002WL-AL3-R 2N7002WG-AL3-R Package SOT-323 1 S Pin Assignment 2 3 G D Packing Tape Reel MARKING 3P G: Halogen Free L: Lead Free www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-537.b 2N7002W Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS ≤1MΩ) VDGR 60 V Continuous ±20 Gate Source Voltage VGSS V Non Repetitive(tP<50μs) ±40 Continuous 300 Drain Current ID mA Pulsed 800 Power Dissipation 200 mW PD Derated Above 25°C 1.6 mW/°C Junction Temperature TJ + 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient RATINGS 625 (Note1) UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN BVDSS IDSS IGSSF IGSSR VGS=0V, ID=10μA VDS=60V, VGS =0V VGS =20V, VDS=0V VGS =-20V, VDS=0V 60 ON CHARACTERISTICS (Note2) Gate Threshold Voltage VGS(TH) 1 Drain-Source On-Voltage VDS (ON) Static Drain-Source On-Resistance RDS (ON) VGS = VDS, ID=250μA VGS = 10V, ID=300mA VGS = 5.0V, ID=50mA VGS=10V, ID=300mA ,TJ=125°C VGS =5.0V, ID=50mA Gate-Source Leakage Current DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS=25V,VGS=0V,f=1.0MHz TYP 1 100 -100 2.1 0.6 0.09 20 11 4 VDD=30V, RL=150Ω, ID=200mA, VGS =10V, RGEN =25Ω VDD=30V, RL=25Ω, ID=200mA, Turn-Off Time tOFF VGS=10V, RGEN =25Ω DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, Is=300mA (Note ) 0.88 Maximum Pulsed Drain-Source Diode ISM Forward Current Maximum Continuous Drain-Source Is Diode Forward Current Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size. 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0% Turn-On Time tON UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MAX UNIT V μA nA nA 2.5 3.75 1.5 13.5 7.5 V Ω Ω 50 25 5 pF pF pF 20 nS 20 nS 1.5 V 0.8 A 300 mA V 2 of 3 QW-R502-537.b 2N7002W Preliminary Power MOSFET TEST CIRCUIT AND WAVEFORM VDD RL VIN VOUT D VGS RGEN DUT G S Fig. 1 tON tOFF tD(ON) tR tD(OFF) tF 90% 90% Output, VOUT 10% 10% Inverted 90% Input, VIN 50% 50% 10% Pulse Width Fig. 2 Switching Waveforms UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-537.b