UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES * In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. * The charge time is approximately 1 second faster than that of germanium transistors. * Less power dissipation because of lWO Collector-to-Emitter Voltage VCE(SAT), permitting more flashes of light to be emitted. * Large current capacity and highly resistant to break-down. * Excellent linearity of hFE in the region from low current to high current. ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD879L-AB3-R 2SD879G-AB3-R 2SD879L-T92-B 2SD879G-T92-B 2SD879L-T92-K 2SD879G-T92-K 2SD879L-T92-R 2SD879G-T92-R Note: Pin Assignment: E: Emitter C: Collector B: Base www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., LTD Package SOT-89 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 B C E E C B E C B E C B Packing Tape Reel Tape Box Bulk Tape Reel 1 of 2 QW-R208-010.Ba 2SD879 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING ( TA=25℃ ,unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEX 20 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage VEBO 6 V Collector Dissipation PD 1 W Collector Current (DC) IC 3 A Collector Current (PULSE) ICP 5 A Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note 1. Pulse Condition -> 100 ms single pulse 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Base-Emitter Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Pulse: 1mS SYMBOL VCBO VCEX VCEO VEBO VBE ICBO IEBO hFE VCE(SAT) fT COB TEST CONDITIONS IC=10uA, IE=0 IC=1mA, VBE=3V IC=1mA, RBE=∞ IE=10uA, IC=0 VCE=-1V,IC=-2A VCB=20V, IE=0 VEB=4V, IC=0 VCE=2V, IC=3A (pulse) IC=3A, IB=60mA (pulse) VCE=10V, IC=50mA VCB=10V, f=1MHz MIN 30 20 10 6 140 TYP MAX 0.83 1.5 1 1 400 0.4 210 0.3 200 30 UNIT V V V V V μA μA V MHz pF UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 2 QW-R208-010.Ba