UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 TO-251 1 TO-220 FEATURES * RDS(ON) = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 6.5 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness TO-252 1 1 SYMBOL TO-220F TO-220F1 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5N60L-x-TA3-T 5N60G-x-TA3-T 5N60L-x-TF3-T 5N60G-x-TF3-T 5N60L-x-TF1-T 5N60G-x-TF1-T 5N60L-x-TM3-T 5N60G-x-TM3-T 5N60L-x-TN3-T 5N60G-x-TN3-T 5N60L-x-TN3-R 5N60G-x-TN3-R www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel 1 of 6 QW-R502-065,F 5N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 5N60-A 600 Drain-Source Voltage VDSS V 5N60-B 650 Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 4.5 A Continuous Drain Current ID 4.5 A Pulsed Drain Current (Note 2) IDM 18 A Single Pulsed (Note 3) EAS 210 mJ Avalanche Energy 10 Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 100 W PD Power Dissipation 36 TO-220F/TO-220F1 TO-251 / TO-252 54 °C Junction Temperature TJ +150 °C Operation Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220 Junction-to-Ambient TO-220F/TO-220F1 TO-251 / TO-252 TO-220 Junction-to-Case TO-220F/TO-220F1 TO-251 / TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 62.5 160 1.25 3.47 2.3 UNIT °C/W °C/W 2 of 6 QW-R502-065,F 5N60 Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL 5N60-A 5N60-B Drain-Source Leakage Current Gate-Source Leakage Current BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS =0V, ID = 250μA VGS =0V, ID = 250μA VDS =600V, VGS = 0V VGS =30V, VDS = 0V VGS =-30V, VDS = 0V Breakdown Voltage Temperature △BVDSS/△TJ ID =250μA, Referenced to 25℃ Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 2.25A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1.0MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 300V, ID =4.5 A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS = 480 V, ID = 4.5A, Gate-Source Charge QGS VGS = 10 V (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.5 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Note 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 650 V 1 100 -100 nA V/°C 0.6 2.0 μA 2.0 4.0 2.5 V Ω 515 55 6.5 670 72 8.5 pF pF pF 10 42 38 46 15 2.5 6.6 30 90 85 100 19 ns ns ns ns nC nC nC 1.4 V 4.5 A 18 A 300 2.2 ns μC 3 of 6 QW-R502-065,F 5N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-065,F 5N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-065,F 5N60 Drain Current, ID (A) Drain Current, ID (A) TYPICAL CHARACTERISTICS On-Resistance Variation vs. Drain Current and Gate Voltage 6 Maximum Safe Operating Area Operation in This Area is Limited by RDS(on) 5 10 VGS=10V 4 VGS=20V 3 2 1 0 100sµ 1 Drain Current, ID (A) Drain-Source On-Resistance, RDS(ON) (Ω) Power MOSFET 100 10-1 *Note: TJ=25℃ 0 2 4 6 Drain Current, ID (A) 8 10 1ms 10 10-2 0 10 0m 10ms s DC *Notes: 1. TC=25℃ 2. TJ=150℃ 3. Single Pulse 101 102 Drain-Source Voltage, VDS (V) 103 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-065,F