UNISONIC TECHNOLOGIES CO., LTD 5N80 Preliminary Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge. It can be applied in high current, high speed switching, switch mode power supplies (SMPS), consumer and industrial lighting, DC-AC inverters for welding equipment and uninterruptible power supply(UPS). FEATURES * RDS(ON): 2.0Ω (TYP.) * Avalanche rugged technology * Low input capacitance * Low gate charge * Application oriented characterization SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 5N80L-TA3-T 5N80G-TA3-T TO-220 5N80L-TF1-T 5N80G-TF1-T TO-220F1 5N80L-TF3-T 5N80G-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 G G G Pin Assignment 2 D D D 3 S S S Packing Tube Tube Tube 1 of 5 QW-R502-483.d 5N80 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VGS=0 VDS 800 V Gate-Source Voltage VGS ±30 V Drain-Gate Voltage RGS=20kΩ VDGR 800 V Continuous ID 5.5 A Drain Current (Continuous) Pulsed (Note 2) IDM 20 A Avalanche Energy Single Pulsed (Note 3) EAS 320 mJ TO-220 125 Power Dissipation PD W TO-220F /TO-220F1 40 TO-220 1 Derating Factor W/°C TO-220F /TO-220F1 0.32 Junction Temperature TJ 150 °C Storage Temperature TSTG -55~150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area. 3. Starting TJ=25°C, ID=IAR, VDD=50V THERMAL DATA PARAMETER Junction to Ambient TO-220 Junction to Case TO-220F /TO-220F1 SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 1 3.12 UNIT °C/W °C/W 2 of 5 QW-R502-483.d 5N80 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=800V, VGS=-0V VGS=+30V VGS=-30V VDS=VGS, ID=250µA VGS=10V, ID=2.5A VGS=10V, ID=2.5A, TC=100°C VDS>ID(ON)×RDS(ON)max,VGS=10V On State Drain Current ID(ON) DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDD=500V, ID=6A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=400V, ID=2.5A, RG=50Ω VGS=10V (Note 1, 2) Rise Time tR Turn-OFF Delay Time tD(OFF) VDD=640V, ID=5.5A, RG=50Ω VGS=10V (Note 1, 2) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=5.5A, VGS=0V Reverse Recovery Time trr ISD=5.5A,dI/dt=100A/µs, Reverse Recovery Charge QRR VDD=80V,TJ=150°C (Note 1) Reverse Recovery Current IRRM Source-Drain Current ISD Source-Drain Current (Pulsed) (Note 1) ISDM Notes: 1. Pulsed: Pulse duration=300µs, duty cycle 1.5%. 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 800 25 +100 -100 3 2.0 5 2.5 4 5 V µA nA nA V Ω A 1190 1450 165 200 70 85 pF pF pF 75 9 33 50 85 120 30 nC nC nC ns ns ns ns 95 65 105 150 40 2 700 7.7 22 5.5 20 V ns nC A A A 3 of 5 QW-R502-483.d 5N80 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-483.d 5N80 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit Time Unclamped Inductive Switching Waveforms UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-483.d