UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 7 Amps, 100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and DMOS technology to provide perfect quality. This device can also withstand high energy pulse in the avalanche and the commutation mode. The UTC 7N10 is generally applied in low voltage applications, such as DC motor controls, audio amplifiers and high efficiency switching DC/DC converters,. FEATURES * Low Gate Charge: 5.8 nC (TYP.) * Low CRSS: 10 pF (TYP.) * 7A, 100V, RDS(ON) = 0.35Ω @VGS = 10 V * Fast Switching * Improved dv/dt Capability SYMBOL (2)D (1) G (3)S ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N10L-AA3-R 7N10G-AA3-R 7N10L-TN3-R 7N10G-TN3-R Package SOT-223 TO-252 www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tape Reel 1 of 6 QW-R502-394.d 7N10 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain -Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±25 V Continuous Drain TC =25°C ID 7 A Current TC = 70°C ID 6.8 A Pulsed Drain Current (Note 2) IDM 16 A Avalanche Current (Note 2) IAR 7 A Repetitive Avalanche Energy (Note 2) EAR 0.2 mJ Single Pulsed Avalanche Energy (Note 3) EAS 50 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 6.0 V/ns SOT-223 2.0 TC =25°C W TO-252 2.5 Power Dissipation PD SOT-223 0.016 Derate above 25°C W/°C TO-252 0.02 Operating Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L =26mH, IAS =1.7A, VDD =25V, RG =25Ω Starting TJ =25°C 4. ISD ≤7.3A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ =25°C THERMAL DATA PARAMETER SYMBOL SOT-223 Junction to Ambient θJA TO-252 Note: When mounted on the minimum pad size recommended (PCB Mount) RATINGS 62.5 50 UNIT °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient SYMBOL BVDSS TEST CONDITIONS VGS =0V, ID =250µA IDSS Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time IGSS VDS = VGS, ID =250µA VGS =10V, ID =3.5A VDS =40V, ID =0.85A(Note 1) CISS COSS CRSS VDS =25V, VGS=0V, f=1.0MHz VGS=10V, VDS=80V, ID=7.3A (Note 1,2) VDD=50V, ID=7.3A, RG=25Ω (Note 1,2) UNISONIC TECHNOLOGIES CO., LTD MAX UNIT V 0.1 VDS =100V, VGS =0V VDS =80V, TC =125°C VGS =±25V, VDS =0V VGS(TH) RDS(ON) gFS QG QGS QGD tD(ON) tR tD(OFF) tF TYP 100 ΔBVDSS/ΔTJ Reference to 25°C ,ID =250µA Drain-Source Leakage Current www.unisonic.com.tw MIN V/°C 1 10 ±100 µA µA nA 4.0 0.35 V Ω S 190 60 10 250 75 13 pF pF pF 5.8 1.4 2.5 7 24 13 19 7.5 nC nC nC ns ns ns ns 2.0 0.28 1.85 25 60 35 50 2 of 6 QW-R502-394.d 7N10 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS =7A, VGS =0V Reverse Recovery Time tRR VGS =0V,IS =7.3A,diF/dt=100A/µs Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP 70 150 MAX UNIT 7 A 16 A 1.5 V ns nC 3 of 6 QW-R502-394.d 7N10 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-394.d 7N10 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Gate Charge Test Circuit Gate Charge Waveforms VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 5 of 6 QW-R502-394.d 7N10 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-394.d