UNISONIC TECHNOLOGIES CO., LTD
UF1010E
Power MOSFET
N-CHANNEL POWER MOSFET
DESCRIPTION
Using high technology of UTC, UTC UF1010E has the
features such as: low RDS(ON), fast switching, and low gate charge.
Like features of all power MOSFET devices’ features, UTC
UF1010E can satisfy almost all the requirements of high efficient
device form customers.
FEATURES
* RDS(ON)<12 mΩ @VGS=10V
* Ultra low gate charge :130 nC
* Low CRSS = 140 pF(typ. )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
* High ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF1010EL-TA3-T
UF1010EG-TA3-T
UF1010EL-TF1-T
UF1010EG-TF1-T
UF1010EL-TF2-T
UF1010EG-TF2-T
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F2
1
G
G
G
Pin Assignment
2
3
D
S
D
S
D
S
Packing
Tube
Tube
Tube
1 of 5
QW-R502-306.C
UF1010E
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
±20
V
Gate to Source Voltage
VGSS
Continuous (VGS=10V)
ID
84
Drain Current
A
Pulsed (Note 2)
IDM
330
Avalanche Current (Note 2)
IAR
50
A
Repetitive (Note 2)
EAR
17
mJ
Avalanche Energy
Single Pulsed (Note3)
EAS
1180
mJ
TO-220
200
Power Dissipation
PD
W
(TC=25°C)
TO-220F1/ TO-220F2
54
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. TJ=25°C, L=260μH, RG=25Ω, IAS=50A
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-220F1/ TO-220F2
TO-220
Junction to Case
TO-220F1/ TO-220F2
SYMBOL
θJA
θJc
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
62
62.5
0.75
2.3
UNIT
°C/W
°C/W
2 of 5
QW-R502-306.C
UF1010E
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
TEST CONDITIONS
VGS=0 V, ID=250 μA
VDS=60 V,VGS=0 V
Drain-Source Leakage Current
IDSS
VDS=48 V,VGS=0 V,TJ=150°C
Gate-Source Leakage Current
IGSS
VGS=±20 V, VDS=0 V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=1mA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250 μA
Static Drain-Source On Resistance(Note)
RDS(ON)
VGS=10 V, ID=50 A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25 V, VGS=0 V,f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
ID =50A,VDS =48V,VGS =10V
Gate-to-Source Charge
QGS
Gate-to-Drain ("Miller") Charge
QGD
Turn ON Delay Time
tD(ON)
Turn ON Rise Time
tR
VDD =30V,ID =50A,RG =3.6Ω
VGS = 10V
Turn OFF Delay Time
tD(OFF)
Turn OFF Fall Time
tF
Internal Drain Inductance
LD
Internal Source Inductance
LS
Diode Forward Voltage
VSD
TJ = 25°C, IS = 50A,VGS = 0V
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
TJ=25°C,IF=50A,
di/dt=100A/μs
Reverse Recovery Charge
QRR
Note: Pulse width ≤ 400μs; duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
60
25
250
±100
V
μA
μA
nA
V/°C
4.0
12
V
mΩ
0.064
2.0
3210
690
140
pF
pF
pF
130
28
44
1.3
nC
nC
nC
ns
ns
ns
ns
nH
nH
V
84
A
330
A
110
330
ns
nC
12
78
48
53
4.5
7.5
73
220
3 of 5
QW-R502-306.C
UF1010E
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Switching Time Waveforms
Switching Time Test Circuit
VGS
VDS
VDS
RD
90％
+
VDD
-
DUT
RG
10％
VGS
VGS=10V
td(on)
tR
tD(off) tF
Pulse Width≤1µs Duty Cycle≤0.1％
Unclamped Inductive Test Circuit
VGS
Unclamped Inductive Waveforms
VDS
V(BR)DSS
15V
L
tP
Driver
DUT
RG
0V
VGS =10V
VDD +
-
IAS
tP
0.01Ω
IAS
Basic Gate Charge Waveform
Gate Charge Test Circuit
VG
2µF
12V
+
50KΩ
QG
-
10V
3µF
VGS
VDS
+
-
QGS
QGD
D.U.T
IG(REF)=3mA
IG
ID
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Charge
4 of 5
QW-R502-306.C
UF1010E
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
Drain-Source On-State Resistance Characteristics
24
20
8
Drain Current, ID (A)
Drain Current,ID (A)
10
6
4
2
VGS=10V,
Id=20A
16
12
8
4
0
0
200
400
600
800 1000
Source to Drain Voltage,VSD (mV)
0
0.1
0.2
0.3
0.4
Drain to Source Voltage, VDS (V)
Drain Current,ID (µA)
Drain Current,ID (µA)
0
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R502-306.C