UNISONIC TECHNOLOGIES CO., LTD Preliminary UT150N04 Power MOSFET 150A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT150N04 is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and high switching speed. The UTC UT150N04 is suitable for all commercial-industrial applications at power dissipation levels to approximately 50 watts, etc. FEATURES * RDS(ON)=3.5mΩ @ VGS=10V,ID=95A * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT150N04L-TA3-T UT150N04G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 6 QW-R502-650.a UT150N04 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 40 V ±20 V TC=25°C 150 (Note 5) A ID Continuous (VGS=10V) Drain Current TC=100°C 115 (Note 5) A Pulsed (Note 2) TC=25°C IDM 600 A Avalanche Current (Note 2) IAR 95 A Single Pulsed (Note 3) EAS 519 mJ Avalanche Energy Repetitive (Note 2) EAR 20 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 5.0 V/ns Power Dissipation (TC=25°C) PD 166 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating: pulse width limited by maximum junction temperature 3. Starting TJ=25°C, L=0.12mH, RG=25Ω, IAS=95A 4. ISD≤95A, di/dt≤150A/µs, VDD≤BVDSS, TJ≤175°C 5. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62 0.75 UNIT °C/W °C/W 2 of 6 QW-R502-650.a UT150N04 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 40 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25°C, ID=1mA 0.036 V/°C VDS=40V, VGS=0V 20 µA Drain-Source Leakage Current IDSS VDS=32V, VGS=0V, TJ=150°C 250 µA Gate- Source Forward VGS=+20V +200 nA IGSS Leakage Current VGS=-20V Reverse -200 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=95A (Note 2) 3.5 4 mΩ DYNAMIC PARAMETERS Input Capacitance CISS 7360 pF VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS 1680 pF 240 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=1.0V, f=1.0MHz 6630 pF Output Capacitance COSS 1490 pF VGS=0V, VDS=32V, f=1.0MHz SWITCHING PARAMETERS Total Gate Charge QG 160 200 nC ID=95A, VDS=32V, VGS=10V Gate to Source Charge QGS 35 nC (Note 2) 42 60 nC Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) 17 ns Rise Time tR 140 ns VDD=20V, ID=95A, RG=2.5Ω, RD=0.21Ω (Note 2) Turn-OFF Delay Time tD(OFF) 72 ns Fall-Time tF 26 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current MOSFET symbol IS 150 A showing the integral (Note 3) reverse p-n junction Maximum Body-Diode Pulsed Current ISM 600 A diode. (Note 1) Drain-Source Diode Forward Voltage VSD IS=150A,VGS=0V,TJ=25°C(Note 3) 1.3 V Body Diode Reverse Recovery Time trr 71 110 ns IF=95A, di/dt=100A/µs, TJ=25°C (Note 2) 180 270 µC Body Diode Reverse Recovery Charge QRR Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature 2. Pulse width≤300µs, Duty cycle≤2% 3. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-650.a UT150N04 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR td(OFF) tF tOFF Resistive Switching Waveforms 4 of 6 QW-R502-650.a UT150N04 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-650.a UT150N04 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-650.a