UTC-IC UTT80N10L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT80N10
Power MOSFET
80A, 100V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC UTT80N10 is an N-channel power MOSFET using
UTC’s advanced technology to provide the customers with perfect
RDS(ON), high switching speed, high current capacity and low gate
charge.
The UTC UTT80N10 is suitable for DC-DC converters, Off-Line
UPS, High Voltage Synchronous Rectifier, Primary Switch for 48V
and 24V Systems, etc.
„
FEATURES
* RDS(ON)=18mΩ @ VGS=10V,ID=80A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 49nC)
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT80N10L-TA3-T
UTT80N10G-TA3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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QW-R502-712.a
UTT80N10
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
80
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
320
A
Single Pulsed Avalanche Energy (Note 3)
EAS
416
mJ
Power Dissipation
PD
211
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
3. L = 0.13mH, IAS = 80A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
62
0.59
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V
Forward
VGS=+20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=80A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
Gate to Source Charge
QGS
VGS=10V, VDD=50V, ID=80A
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=50V, ID=80A, VGS=10V,
RGS=5.0Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=80A
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Body Diode Reverse Recovery Time
trr
IS=40A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
100
3.5
V
1
µA
+100 nA
-100 nA
4.5
15
5.5
18
V
mΩ
4152
485
220
pF
pF
pF
350
23
16
90
100
450
200
nC
nC
nC
ns
ns
ns
ns
0.99 1.25
80
320
70 105
202 303
V
A
A
ns
nC
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QW-R502-712.a
UTT80N10
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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