VISHAY HFA16TB120PBF

VS-HFA16TB120PbF
Vishay Semiconductors
HEXFRED®
Ultrasoft Soft Recovery Diode, 16 A
FEATURES
•
•
•
•
Ultrafast and ultrasoft recovery
Very low IRRM and Qrr
Compliant to RoHS Directive 2002/95/EC
Designed and qualified for industrial level
BENEFITS
•
•
•
•
•
Base
cathode
2
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION
1
Cathode
VS-HFA16TB120PbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 16 A continuous current,
the VS-HFA16TB120PbF is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the HEXFRED® product line
features extremely low values of peak recovery current
(IRRM) and does not exhibit any tendency to “snap-off”
during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA16TB120PbF is
ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
3
Anode
TO-220AC
PRODUCT SUMMARY
Package
TO-220AC
IF(AV)
16 A
VR
1200 V
VF at IF
3.0 V
trr (typ.)
30 ns
TJ max.
150 °C
Diode variation
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Maximum continuous forward current
IF
TEST CONDITIONS
TC = 100 °C
VALUES
UNITS
1200
V
16
Single pulse forward current
IFSM
190
Maximum repetitive forward current
IFRM
64
Maximum power dissipation
Operating junction and storage temperature range
Document Number: 94060
Revision: 24-May-11
PD
TJ, TStg
TC = 25 °C
151
TC = 100 °C
60
- 55 to + 150
A
W
°C
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16TB120PbF
Vishay Semiconductors
HEXFRED®
Ultrasoft Soft Recovery Diode, 16 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
VBR
TEST CONDITIONS
IR = 100 μA
IF = 16 A
Maximum forward voltage
VFM
IF = 32 A
See fig. 1
IF = 16 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IRM
Junction capacitance
CT
VR = 200 V
LS
Measured lead to lead 5 mm from package
body
Series inductance
TJ = 125 °C, VR = 0.8 x VR rated
See fig. 2
See fig. 3
MIN.
TYP.
MAX.
UNITS
1200
-
-
-
2.5
3.0
-
3.2
3.93
-
2.3
2.7
-
0.75
20
-
375
2000
-
27
40
pF
-
8.0
-
nH
MIN.
TYP.
MAX.
UNITS
-
30
-
V
μA
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5 and 10
SYMBOL
TEST CONDITIONS
trr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
trr1
TJ = 25 °C
-
90
135
trr2
TJ = 125 °C
-
164
245
-
5.8
10
-
8.3
15
-
260
675
-
680
1838
ns
IRRM1
TJ = 25 °C
IRRM2
TJ = 125 °C
Reverse recovery charge
See fig. 7
Qrr1
TJ = 25 °C
Qrr2
TJ = 125 °C
Peak rate of fall of
recovery current during tb
See fig. 8
dI(rec)M/dt1
TJ = 25 °C
-
120
-
dI(rec)M/dt2
TJ = 125 °C
-
76
-
MIN.
TYP.
MAX.
UNITS
-
-
300
°C
-
-
0.83
Peak recovery current
See fig. 6
IF = 16 A
dIF/dt = 200 A/μs
VR = 200 V
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
0.063" from case (1.6 mm) for 10 s
Lead temperature
Tlead
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
80
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.50
-
-
2.0
-
-
0.07
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
Weight
6.0
(5.0)
Mounting torque
Marking device
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Case style TO-220AC
K/W
g
HFA16TB120
For technical questions within your region, please contact one of the following:
Document Number: 94060
[email protected], [email protected], [email protected]
Revision: 24-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16TB120PbF
100
1000
TJ = 150 °C
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
HEXFRED®
Vishay Semiconductors
Ultrasoft Soft Recovery Diode, 16 A
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
100
1
TJ = 25 °C
0.1
0.1
0.01
0
2
4
6
0
8
VFM - Forward Voltage Drop (V)
94060_01
TJ = 125 °C
10
800
600
1000
1200
VR - Reverse Voltage (V)
94060_02
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward
Current
400
200
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
100
TJ = 25 °C
10
1
1
10
100
1000
10 000
VR - Reverse Voltage (V)
94060_03
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Response
1
0.1
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak T J = PDM x ZthJC + T C
0.01
0.00001
94060_04
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94060
Revision: 24-May-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16TB120PbF
Vishay Semiconductors
HEXFRED®
Ultrasoft Soft Recovery Diode, 16 A
1600
270
VR = 200 V
TJ = 125 °C
TJ = 25 °C
1400
220
1200
Qrr (nC)
trr (ns)
IF = 16 A
IF = 8 A
170
120
IF = 16 A
IF = 8 A
1000
800
600
400
70
VR = 200 V
TJ = 125 °C
TJ = 25 °C
20
100
200
0
100
1000
dIF/dt (A/µs)
94060_05
Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg)
10 000
30
IRR (A)
dI(rec)M/dt (A/µs)
VR = 200 V
TJ = 125 °C
TJ = 25 °C
20
dIF/dt (A/µs)
94057_07
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)
25
1000
IF = 16 A
IF = 8 A
15
10
VR = 200 V
TJ = 125 °C
TJ = 25 °C
1000
IF = 16 A
IF = 8 A
100
5
0
100
94057_06
1000
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. diF/dt (Per Leg)
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10
100
94057_08
1000
dIF/dt (A/µs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg)
For technical questions within your region, please contact one of the following:
Document Number: 94060
[email protected], [email protected], [email protected]
Revision: 24-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16TB120PbF
HEXFRED®
Vishay Semiconductors
Ultrasoft Soft Recovery Diode, 16 A
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94060
Revision: 24-May-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA16TB120PbF
Vishay Semiconductors
HEXFRED®
Ultrasoft Soft Recovery Diode, 16 A
ORDERING INFORMATION TABLE
Device code
VS-
HF
A
16
TB
1
2
3
4
5
120 PbF
6
1
-
Vishay Semiconductors product
2
-
HEXFRED® family
3
-
Electron irradiated
4
-
Current rating (16 = 16 A)
4
5
-
Package:
7
TB = TO-220AC
4
6
-
Voltage rating (120 = 1200 V)
7
-
PbF = Lead (Pb)-free
Tube standard pack quantity: 50 pieces
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95221
Part marking information
www.vishay.com/doc?95224
www.vishay.com
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For technical questions within your region, please contact one of the following:
Document Number: 94060
[email protected], [email protected], [email protected]
Revision: 24-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
(6)
B
Seating
plane
A
E
A
ØP
0.014 M B A M
E2 (7)
Q
3
D
D
L1
E
A1
C
Thermal pad
C
H1
D2
Detail B
(6)
2 x b2
2xb
Detail B
θ
D1
1
2
A
(6)
H1
(7)
(6) D
1
2 3
Lead tip
L3
C
E1
(6)
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
L4
L
c
e1
A
Conforms to JEDEC outline TO-220AC
View A - A
A2
0.015 M B A M
SYMBOL
MILLIMETERS
INCHES
NOTES
SYMBOL
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
E1
A1
1.14
1.40
0.045
0.055
A2
2.56
2.92
0.101
0.115
b
0.69
1.01
0.027
0.040
b1
0.38
0.97
0.015
0.038
b2
1.20
1.73
0.047
0.068
b3
1.14
1.73
0.045
0.068
MILLIMETERS
INCHES
MAX.
MIN.
MAX.
6.86
8.89
0.270
0.350
6
E2
-
0.76
-
0.030
7
e
2.41
2.67
0.095
0.105
e1
4.88
5.28
0.192
0.208
4
H1
6.09
6.48
0.240
0.255
L
13.52
14.02
0.532
0.552
4
L1
3.32
3.82
0.131
0.150
c
0.36
0.61
0.014
0.024
L3
1.78
2.13
0.070
0.084
c1
0.36
0.56
0.014
0.022
4
L4
0.76
1.27
0.030
0.050
D
14.85
15.25
0.585
0.600
3
ØP
3.54
3.73
0.139
0.147
Q
2.60
3.00
0.102
0.118
D1
8.38
9.02
0.330
0.355
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
NOTES
MIN.

90° to 93°
6, 7
2
2
90° to 93°
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], Diode[email protected]
www.vishay.com
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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