VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Maximum Rise/Fall Times of 38ps • Single-Supply • High-Speed Operation (Up to 10.7Gb/s NRZ Data) • CML-Compatible Data Inputs • Differential Inputs • 50Ω Output Impedance • On-Chip 50Ω Input Terminations General Description The VSC7991 is a single 7V supply, 10.7Gb/s Electroabsorption Modulator (EAM)/laser diode driver with direct access to the laser modulation FETs. Laser offset and modulation currents are set by external components allowing precision monitoring and setting of the voltage levels. Data inputs are differentially terminated to 50Ω. Applications • SONET/SDH @ 2.488Gb/s, 9.952Gb/s, 10.7Gb/s VSC7991 Block Diagram 60Ω(1) 60Ω(1) 50Ω(1) NDOUT DOUT 50Ω(1) DIN 300Ω(1) 300Ω(1) NDIN DCC IMOD IB IBN Note: (1) On-die components. VIP IP G52321-0, Rev 2.3 02/26/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 1 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver VSC7991 AC Characteristics (Over recommended operating conditions) Table 1: High Speed Inputs /Outputs Symbol Parameter IRL Input Return Loss, 50Ω System ORL Output Return Loss, 50Ω System Min Typ Max Units Conditions −15 −12 Min Typ Max Units Conditions 38 ps 50Ω load, 20% to 80%, VMOD = 3V dB 50MHz to 10GHz dB 50MHz to 10GHz Table 2: Laser Driver AC Electrical Specifications Symbol Parameter tR tF Output Rise and Fall Times Jitter Output Jitter 15 ps/p-p Overshoot/Undershoot −10 +10 % Duty-Cycle −25 +25 % 50Ω Load, VMOD = 3V DCC in the range of VSS − 0.5V to VSS +2V DC Characteristics (Over recommended operating conditions) Table 3: Power Dissipation Symbol Parameter Min Typ Max Units Conditions IVSS Power Supply Current (VSS) 300 330 mA VSS = −6.8, RL = 50Ω to GND, IMOD = 120mA, VBIAS = 0V PD Total Power Dissipation 2040 2244 mW VSS = −6.8, RL = 50Ω to GND IMOD = 120mA, VBIAS = 0V Min Typ Max Units Conditions −0.8 0 V Table 4: Laser Driver DC Electrical Specifications Symbol Parameter VBIAS Programmable Output Offset Voltage VMOD Modulation Voltage Amplitude VOCM Output Voltage Compliance IB, IBN Laser Bias Control Voltage 1.5 3 V 4 V −10 0 V VSS + 0.7 V 0 mV VIP Laser Modulation Control Voltage VSS VIH Input High Voltage −150 VIL Input Low Voltage −1.00 VSW(1) Input Voltage Swing 450 DCC Duty-Cycle Control VSS − 0.5V −0.60 V 1000 mVp-p VSS+ 2V NOTE: DIN and NDIN inputs need to be driven differentially. If single-ended drive is desired, it is necessary to add a DC bias to the unused pin. Page 2 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52321-0, Rev 2.3 02/26/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Absolute Maximum Ratings(1) Negative Power Supply Voltage (VSS).............................................................................................. VCC to −8.0V All Pins ................................................................................................................................................VSS to + .5V Supply Voltage (VSS) ......................................................................................................................................... 8V Supply Current (ISS) .................................................................................................................................... 500mA Input Voltage (VIN)........................................................................................................................................ −2.0V Output Voltage (VOUT)................................................................................................................................. −4.0V Modulation Control Voltage (VIP).........................................................................................................VSS − 0.5V Output Offset Control Voltage (IB, IBN) ..........................................................................................................11V Output Offset Control Current (IIB) .............................................................................................................. 50mA Maximum Junction Temperature Range ..................................................................................... −55°C to +125°C Storage Temperature Range: ....................................................................................................... −55°C to +125°C Note: (1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may affect device reliability. Recommended Operating Conditions Positive Voltage Rail (GND) .............................................................................................................................. 0V Negative Voltage Rail (VSS)........................................................................................................... −6.5V to −7.2V Operational Case Temperature (TC1) ...................................................................................................0°C to 75°C G52321-0, Rev 2.3 02/26/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 3 IB Pad 34 IB Pad 35 GND Pad 36 GND Pad 37 GND Pad 38 GND Pad 39 GND Pad 40 GND Pad 41 VSS Pad 42 VSS Pad 43 VSS Pad 44 VSS Pad 45 GND Pad 46 GND Pad 47 GND Pad 48 GND Pad 1 DOUT Pad 32 NDIN Pad 2 GND Pad 3 GND Pad 30 GND Pad 4 GND Pad 29 GND Pad 5 VSC7991 GND Pad 6 GND Pad 27 GND Pad 7 NDOUT Pad 26 DIN Pad 8 GND Pad 25 GND Pad 9 IBN Pad 24 IBN Pad 23 IP Pad 22 IP Pad 21 GND Pad 20 GND Pad 19 VIP Pad 18 VSS Pad 17 VSS Pad 16 VSS Pad 15 VSS Pad 14 DCC Pad 13 NOTE: All dimensions are in micrometers. The 48 pads specified in the pad coordinates were merged into 24 larger pads. GND Pad 11 NC Pad 10 50µm (0.002") G52321-0, Rev 2.3 02/26/01 VSC7991 Die Size: 2354µm x 1754µm (0.0927" x 0.0691") Die Thickness: 381µm (0.015") Pad Pitch: 150µm (0.0059") Pad Size: 116µm x 116µm (0.0046" x 0.0046") Pad Passivation Opening: 100µm x 100µm (0.0039" x 0.0039") Scribe Size: 50µm (0.002") GND Pad 12 Advance Product Information GND Pad 28 SEMICONDUCTOR CORPORATION 1754µm (0.0691") GND Pad 31 VITESSE 50µm (0.002") Figure 1: Pad Assignments © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com GND Pad 33 SDH/SONET 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Bare Die Descriptions Page 4 2354µm (0.0927") VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver VSC7991 Table 5: Pad Coordinates Pad Number Signal Name 1 Coordinates (µm) X Y Pad Number GND 2296 1546 25 2 NDIN 2296 1396 3 GND 2296 1246 4 GND 2296 5 GND 2296 6 GND 2296 692.5 7 GND 2296 508 8 DIN 2296 358 9 GND 2296 208 Signal Name Coordinates (µm) X Y GND 58 208 26 NDOUT 58 358 27 GND 58 508 1061.5 28 GND 58 692.5 877 29 GND 58 877 30 GND 58 1061.5 31 GND 58 1246 32 DOUT 58 1396 33 GND 58 1546 10 NC 2296 58 34 IB 58 1696 11 GND 2146 58 35 IB 208 1696 12 GND 1996 58 36 GND 358 1696 13 VDCC 1846 58 37 GND 508 1696 14 VSS 1696 58 38 GND 658 1696 15 VSS 1546 58 39 GND 808 1696 16 VSS 1396 58 40 GND 958 1696 17 VSS 1246 58 41 GND 1108 1696 18 VIP 1027 58 42 VSS 1258 1696 19 GND 808 58 43 VSS 1408 1696 20 GND 658 58 44 VSS 1558 1696 21 IP 508 58 45 VSS 1708 1696 22 IP 358 58 46 GND 1858 1696 23 IBN 208 58 47 GND 2008 1696 24 IBN 58 58 48 GND 2158 1696 G52321-0, Rev 2.3 02/26/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 5 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver VSC7991 Package Pin Descriptions Page 6 GND GND VSS VSS GND GND IB GND 32 31 30 29 28 27 26 25 Figure 2: Pin Identification GND 1 24 GND GND 2 23 GND NDIN 3 22 DOUT GND 4 21 GND GND 5 20 GND DIN 6 19 NDOUT GND 7 18 GND GND 8 17 GND VSC7991 9 10 11 12 13 14 15 16 GND DCC VSS VSS VIP IP IBN GND Top View © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52321-0, Rev 2.3 02/26/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver VSC7991 Table 6: Pin Identifications Pin # Name Type Level Description 1 GND Pwr Pwr 2 GND Pwr Pwr Positive Voltage Rail 3 NDIN In CML Complementary Data In 4 GND Pwr Pwr Positive Voltage Rail 5 GND Pwr Pwr Positive Voltage Rail Positive Voltage Rail 6 DIN In CML Data In 7 GND Pwr Pwr Positive Voltage Rail 8 GND Pwr Pwr Positive Voltage Rail 9 GND Pwr Pwr Positive Voltage Rail 10 DCC In DC Duty-Cycle Control Voltage 11 VSS Pwr Pwr Negative Voltage Rail 12 VSS Pwr Pwr Negative Voltage Rail 13 VIP In DC Modulation Control Voltage 14 IP In DC Modulation Current Monitor 15 IBN In DC Data Offset Control Current (complementary) 16 GND Pwr Pwr Positive Voltage Rail 17 GND Pwr Pwr Positive Voltage Rail 18 GND Pwr Pwr 19 NDOUT Out 20 GND Pwr Pwr Positive Voltage Rail 21 GND Pwr Pwr Positive Voltage Rail 22 DOUT Out 23 GND Pwr Pwr Positive Voltage Rail 24 GND Pwr Pwr Positive Voltage Rail 25 GND Pwr Pwr Positive Voltage Rail Positive Voltage Rail Laser Modulation Current Output (complementary) Laser Modulation Current Output 26 IB In DC Data Offset Control Current 27 GND Pwr Pwr Positive Voltage Rail 28 GND Pwr Pwr Positive Voltage Rail 29 VSS Pwr Pwr Negative Voltage Rail 30 VSS Pwr Pwr Negative Voltage Rail 31 GND Pwr Pwr Positive Voltage Rail 32 GND Pwr Pwr Positive Voltage Rail NOTE: A voltage HIGH on the data input (pin 6) corresponds to a voltage HIGH on the data output (pin 22). G52321-0, Rev 2.3 02/26/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 7 VITESSE SEMICONDUCTOR CORPORATION SDH/SONET 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Advance Product Information VSC7991 Package Information DIMS A A1 A2 D D1 E E1 L e b ddd θ CCC R1 R Shoulder TOL. DIM REF 0.054 ±0.003 0.003 REF 0.050 ±0.010 0.321 ±0.005 0.225 ±0.010 0.321 ±0.005 0.225 ±0.005 0.021 REF 0.0256 TYP 0.011 N/A 0.004 N/A 0° - 10° MAX 0.004 ±0.003 0.005 ±0.003 0.005 - 0.020 θ All dimensions in inches. Page 8 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52321-0, Rev 2.3 02/26/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Ordering Information The order number for this product is formed by a combination of the device number, and package style. VSC7991 Device Type VSC7991: SONET/SDH 10.7Gb/s Laser Diode Driver xx Package Style CD: Metal Glass with Metal Lid—Formed Leads X : Bare Die Notice Vitesse Semiconductor Corporation (“Vitesse”) provides this document for informational purposes only. This document contains pre-production information about Vitesse products in their concept, development and/or testing phase. All informaiton in this document, including descriptions of features, functions, performance, technical specifications and availability, is subject to change without notice at any time. Nothing contained in this document shall be construed as extending any warranty or promise, express or implied, that any Vitesse product will be available as described or will be suitable for or will accomplish any particular task. Vitesse products are not intended for use in life support appliances, devices or systems. Use of a Vitesse product in such applications without written consent is prohibited. G52321-0, Rev 2.3 02/26/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com Page 9 VITESSE SEMICONDUCTOR CORPORATION SDH/SONET 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Advance Product Information VSC7991 This page left intentionally blank. Page 10 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected] Internet: www.vitesse.com G52321-0, Rev 2.3 02/26/01