2SB647 / 2SB647A PNP General Purpose Transistors P b Lead(Pb)-Free 2 1 3 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 80 V Collector-Base Voltage VCBO 120 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 1000 mA Total Device Dissipation TA=25°C PD 900 mW Junction Temperature Tj +150 °C Storage Temperature Tstg -55 to +150 °C WEITRON 1/5 Rating http://www.weitron.com.tw 09-Dec-08 2SB647 / 2SB647A ELECTRICAL CHARACTERISTICS (TA=25ºC unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Test conditions 2SB647 2SB647A UNIT Ic= -10? A , IE=0 -120 - V V(BR)CEO IC=-1mA , -80 -100 - V V(BR)EBO IE= -10? A, IC=0 -5 - V ICBO VCB= -100 V, IE=0 - -10 ?A hFE(1)* VCE=-5 V, IC= -150mA 60 60 320 200 - hFE(2) VCE=-5 V, IC= -500mA 30 - - VCEsat IC=-500mA, IB=-50mA - -1 V fT VCE=-5V, IC= -150mA 140 - MHz Cob VCE=-10V, IE=0 f=1 MHz - 20 pF IB=0 2SB647A Collector cut-off current MAX V(BR)CBO 2SB647 Emitter-base breakdown voltage MIN DC current gain Collector-emitter saturation voltage Transition frequency Output capacitance CLASSIFICATION OF hFE Rank B C D 2SB647 60-120 100-200 160-320 2SB647A 60-120 100-200 - Range WEITRON http://www.weitron.com.tw 2/5 09-Dec-08 2SB647 / 2SB647A Typical Characteristics WEITRON http://www.weitron.com.tw 3/5 09-Dec-08 2SB647 / 2SB647A WEITRON http://www.weitron.com.tw 4/5 09-Dec-08 2SB647 / 2SB647A TO-92MOD Outline Dimensions unit:mm G J TO-92MOD Dim A B C D E G J K L M D M C K E A B L M in M ax 4.70 5.10 1.73 2.03 0.40 0.60 0.90 1.10 0.40 0.50 5.80 6.20 8.40 8.80 1.50Typ 2.90 3.10 12.20 13.45 WEITRON http://www.weitron.com.tw 5/5 09-Dec-08