2SD880 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 FEATURES: 1 BASE 1 * Low frequency power amplifier * Complement to 2SB834 2 3 1. BASE 2. COLLECTOR 3. EMITTER 3 EMITTER TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=50mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 7 V Collector cut-off current ICBO VCB=60V, IE=0 100 µA Emitter cut-off current IEBO VEB=7V, IC=0 100 µA DC current gain hFE VCE=5V, IC=500mA 60 300 VCE (sat) IC=3A, IB=300mA 1 V Base-emitter voltage VBE IC=0.5A, VCE= 5V 1 V Transition Frequency fT VCE=5 V, IC=500mA 3 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 70 pF Turn on time ton 0.8 µs 1.5 µs 0.8 µs Collector-emitter saturation voltage Storage time ts Fall time tf IB1=-IB2=0.2A, IC=2A VCC=30V, PW=20µs CLASSIFICATION OF hFE Rank O Y GR Range 60-120 100-200 150-300 WEITRON http://www.weitron.com.tw 1/3 02-Feb-07 2SD880 WEITRON http://www.weitron.com.tw 2/3 02-Feb-07 2SD880 TO-220 Outline Dimensions unit:mm TO-220 A D C1 Dim A A1 B B1 C C1 D E E1 G G1 F H L L1 Ø F H E1 E B1 L1 A1 L B G C G1 Φ WEI TRON http://www.weitron.com.tw 3/3 M in M ax 4.67 4.47 2.82 2.52 0.91 0.71 1.37 1.17 0.53 0.31 1.37 1.17 10.31 10.01 8.90 8.50 12.06 12.446 2.54 TYP 4.98 5.18 2.89 2.59 0.30 0.00 13.4 13.8 3.96 3.56 3.93 3.73 02-Feb-07