WEITRON A733 PNP Transistor COLLECTOR 2. P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 3. BASE 1. EMITTER TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -100 mA Collector Power Dissipation PC 250 mW Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55 to +150 ℃ Parameter ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -50uA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -50uA, IC=0 -5 V Collector cut-off current ICBO VCB= -60V, IE=0 -0.1 uA Emitter cut-off current IEBO VEB= -5 V, IC=0 -0.1 uA DC current gain hFE VCE= -6V, IC= -1mA Collector-emitter saturation voltage VCE(sat) 90 IC= -100mA, IB=- 10mA Base-emitter voltage VBE VCE=-6V,IC=-1.0mA -0.58 Transition frequency fT VCE=-6V,IC=-10mA 100 Collector output capacitance Cob Noise figure NF VCB=-10V,IE=0,f=1MHZ VCE=-6V,IC=-0.3mA, Rg=10kΩ,f=100HZ 200 600 -0.18 -0.3 V -0.62 -0.68 V MHz 6 pF 20 dB CLASSIFICATION OF hFE Rank Range WEITRON hpp://www.weitron.com.tw R Q P K 90-180 135-270 200-400 300-600 1/2 09-Dec-08 A733 Ratings and Characteristic Curves WEITRON hpp://www.weitron.com.tw 2/2 09-Dec-08