BAS16TDW Surface Mount Switching Multi-Chip Diode Array MULTI-CHIP DIODES 150m AMPERES P b Lead(Pb)-Free 75 VOLTS Features: * Fast Switching Speed * Ultra-Small Surface Mount Package * For General Purpose Switching Applications * High Conductance Power Dissipation 6 5 1 2 4 3 SOT-363 Mechanical Data: * Case : SOT-363 * Case Material : Molded Plastic. UL Flammability Classification Ration 94V-0 * Moisture Sensitivity : Level 1 per J-STD-020C * Terminals : Solderable per MIL-STD-202, Method 208 * Polarity : See Diagram * Weight : 0.006 grams(appro) SOT-363 Outline Dimensions Unit:mm A 6 5 SOT-363 4 B C 1 2 D 3 E H K J WEITRON http://www.weitron.com.tw L M 1/3 Dim A B C D E H J K L M Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25 Rev.A 20-Oct-09 BAS16TDW Maximum Ratings@ TA= 25°C unless otherwise specified Characteristic Symbol Value Unit VRM 100 V VRRM VRWM VR 75 V VR(RMS) 53 V Forward Continuous Current (Note 1) IFM 300 mA Average Rectified Output Current (Note 1) IO 150 mA IFSM 2.0 1.0 A PD 200 mW RθJA 625 °C/W Tj +150 °C TSTG -55 to +150 °C Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Non-Repetitive Peak Forward Surge Current@ t = 1.0µs @ t = 1.0s Power Dissipation (Note 1) Thermal Resistant Junction to Ambient Air (Note 1) Operating Temperature Range Storage Temperature Range Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Reverse Breakdown Voltage (Note 2) IR = 100µA Forward Voltage (Note 2) IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA Symbol Min Max Unit V(BR)R 75 - V VF - 0.715 0.855 1.0 1.25 V µA µA µA nA Reverse Current (Note 2) VR = 75V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V IR - 1.0 50 30 25 Total Capacitance VR = 0V, f = 1.0MHz CT - 2.0 pF Reverse Recovery Time IF= IR=10mA, Irr=0.1 x IR, RL=100Ω Trr - 4.0 ns Notes:2. Short duration test pulse used to minimize self-heating effect. WEITRON http://www.weitron.com.tw 2/3 Rev.A 20-Oct-09 BAS16TDW Device Marking Marking Item BAS16TDW MMBD4148TDW Eqivalent Circuit diagram 1 2 3 KA2 6 5 4 Typical Characteristics 10 T A = 150°C I R , REVERSE CURRENT (µA) I F , FORWARD CURRENT (mA) 100 T A= 85°C 10 TA= – 40°C 1.0 T A= 25°C 0.1 T A = 125°C 1.0 T A = 85°C 0.1 T A = 55°C 0.01 T A = 25°C 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 50 C D , DIODE CAPACITANCE (pF) 0.68 0.64 0.60 0.56 0.52 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance WEITRON http://www.weitron.com.tw 3/3 Rev.A 20-Oct-09