BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage VCBO -50 V Emitter-Base VOltage VEBO -5.0 V IC 500 mAdc Rating Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD Max Unit 225 1.8 mW mW/ C C/W R qJA 556 PD 300 2.4 R qJA 417 mW mW/ C C/W TJ,Tstg -55 to +150 C Device Marking BC807-17=5A1 , BC807-25=5B1 , BC807-40=5C1 1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. WEITRON http://www.weitron.com.tw Rev.A 16-Dec-08 BC807-16/BC807-25 BC807-40 WE IT R ON Electrical Characteristics (TA=25 C Unless Otherwise noted) Symbol Min Typ Max Collector-Emitter Breakdown Voltage (IC= -10mA) V(BR)CEO -45 - - Collector-Emitter Breakdown Voltage (IC=-10 µA ,VEB=0) V(BR)CES -50 - - Emitter-Base Breakdown Voltage (IE=-1.0 µA) V(BR)EBO -5.0 - - ICBO - - 100 5.0 Min Typ Characteristics Unit Off Characteristics Collector Cutoff Current (VCB=20V) (VCB=20V, TA=150 C) Electrical Characteristics V V V nA mA (TA=25 C Unless Otherwise noted) Characteristics Symbol Max Unit On Characteristics DC Current Gain (IC= -100mA, VCE=-1.0V) BC807-16 BC807-25 BC807-40 hFE (IC= -500mA,VCE=-1.0V) 100 160 250 - 250 400 600 40 - -0.7 V V Collector-Emitter Saturation Voltage (IC= -500mA, IB=50mA) VCE(sat) - - Base-Emitter On Voltage (IC= -500mA, IB=-1.0V) VBE(on) - - -1.2 fT 100 - - Cobo - 10 - - Small-signal Characteristics Current-Gain-Bandwidth Product (IC= -10mA, VCE= -5.0VDC, f=100MHz) Output Capacitance (VCB= -10V, f=1.0MHz) WEITRON http://www.weitron.com.tw MHz pF BC807-16/BC807-25 BC807-40 h FE , DC CURRENT GAIN 1000 VCE = -1.0 V TA = 25 C 100 10 -0.1 -1.0 -10 -100 IC , COLLECTOR CURRENT (mA) -1000 -1.0 -1.0 TA = 25C TJ = 25 C -0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOL TS ) Figure 1. DC Current Gain IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 -1.0 -10 IB , BASE CURRENT (mA) VBE(on) @ V CE = -1.0 V -0.6 -0.4 VCE(sat) @ I C/IB = 10 IC = -10 mA -0.1 0 -1.0 -100 -1000 100 0 C, CAPACITANCE (pF) +1.0 q VC for VCE(sat) -1.0 q q V , TEMPERA TURE COEFFICIENTS (mV/ C) -10 -100 IC , COLLECTOR CURRENT (mA) Figure 3. "On" Voltages Figure 2. Saturation Region -2.0 VBE(sat) @ I C/IB = 10 -0.2 IC = -100 mA 0 -0.01 -0.8 VB for VBE -1.0 -10 -100 IC , COLLECTOR CURRENT Figure 4. T emperature Coefficients WEITRON http://www.weitron.com.tw -1000 Cib 10 Cob 1.0 -0.1 -1.0 -10 VR , REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances -100 BC807-16/BC807-25 BC807-40 SOT-23 Package Outline Dimension S OT -23 A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25