WEITRON BC846AW_06

BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
General Purpose Transistor
NPN Silicon
P b Lead(Pb)-Free
COLLECTOR
3
3
1
1
BASE
2
2
EMITTER
SOT-323(SC-70)
Maximum Ratings (TA=25°C Unlesso therwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
Value
Unit
BC846
BC847
BC848
V CEO
65
45
30
V
BC846
BC847
BC848
VCBO
80
50
30
V
BC846
BC847
BC848
VEBO
6.0
6.0
5.0
V
IC
100
mA
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (Note.1)
TA=25°C
Derate above 25°C
Thermal Resistance, Junctionto Ambient (Note.1)
Junctionand Temperature Range
Storage Temperature Range
Max
Unit
PD
150
2.4
mW
mW/°C
RθJA
833
°C/W
TJ
+150
°C
Tstg
-55 to +150
°C
Symbol
Device Marking
BC846AW=1A; BC846BW=1B; BC847AW=1E; BC847BW=1F
BC847CW=1G; BC848AW=1J; BC848BW;=1K; BC848CW=1L
1. FR-5=1.0 x 0.75 x 0.062 in.
WE ITR O N
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1/4
Rev.B 12-Dec-06
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
WEITRON
Electrical Characteristics (TA=25°C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage
(IC=10mA)
BC846A Series
BC847A Series
BC848A Series
V(BR)CEO
65
45
30
-
-
V
Collector-Emitter Breakdown Voltage
(IC=10μA,VEB=0)
BC846A Series
BC847A Series
BC848A Series
V(BR)CES
80
50
30
-
-
V
Collector-Base Breakdown Voltage
(IC=10μA)
BC846A Series
BC847A Series
BC848A Series
V(BR)CBO
80
50
30
-
-
V
Emitter-Base Breakdown Voltage
(IE=1.0μA)
BC846A Series
BC847A Series
BC848A Series
V(BR)EBO
6.0
6.0
5.0
-
-
V
ICBO
-
-
15
5.0
nA
mA
hFE
110
200
420
90
150
270
180
290
520
220
450
800
-
Collector-Emitter Saturation Voltage
(IC=10mA, IB=0.5mA)
(IC=100mA, IB=5.0mA)
VCE(sat)
-
-
0.25
0.6
V
Base-Emitter Saturation Voltage
(IC=10mA,IB=0.5mA)
(IC=100mA,IB=5.0mA)
VBE(sat)
-
-0.7
-0.9
-
V
Base-Emitter On Voltage
(IC=2.0mA,VCE=5.0V)
(IC=10mA,VCE=5.0V)
VBE(on)
580
-
660
-
700
770
V
fT
100
-
-
MHz
-
-
4.5
pF
-
-
10
4.0
dB
Collector Cutoff Current
(VCB=30V)
(VCB=30V, TA=150°C)
On Characteristics
DC Current Gain
(IC=10uA, VCE=5.0V)
(IC=2.0mA, VCE=5.0V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C,
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC=10mA, VCE=5.0V, f=100MHz)
Output Capacitance
(VCB=10V, f=1.0MHz)
Cobo
Noise Figure
(IC=0.2mA, VCE=5.0V, Rs=2.0kΩ, f=1.0kHz, BW=200Hz)
BC846A,B BC847A,B BC848A,B
BC847C, BC848C
W E IT R O N
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NF
2/4
Rev.B 12-Dec-06
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
WEITRON
1.0
2.0
TA=2 5 C
0.9
VCE=1 0 V
TA=2 5 C
1.5
V, VOLTAGE (VOLTS)
hFE,NORMALIZED DC CURRENT GAIN
BC847 & BC848 Series
1.0
0.8
0.6
0.4
0.8
VBE(s at)@IC/ B C=1 0
0.7
VBE(ON)@VCE= 1 0 V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(s at)@IC/ B C=1 0
0.1
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0
0.1
200
2.0
1.6
IC= 2 0 0 mA
1.2
IC=
1 0 mA
0.4
0
IC= 1 0 0 mA
IC=-5 0 mA
IC= 2 0 mA
0.02
0.1
1.0
10
20
Cib
3.0
1.0
0.4
Cob
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
40
fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
C,CAPACITANCE (pF)
TA=2 5 C
2.0
VR, REVERSE VOLTAGE (VOLTS)
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20 30 50
70 100
-5 5 C to +1 2 5 C
1.2
1.6
2.0
2.4
2.8
0.2
1.0
10
IC, COLLECTOR CURRENT (mA)
100
400
300
200
VCE=1 0 V
TA= 2 5 C
100
80
60
40
30
20
0.5 0.7 1.0
2.0
3.0
5.0
7.0
10
20
30
50
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
W E IT R O N
5.0 7.0 10
Figure 4. Base-Emitter Temperature Coefficient
10
5.0
2.0 3.0
1.0
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
7.0
0.5 0.7 1.0
Firure2. "Saturation" And "On" Voltage
TA=2 5 C
0.8
0.2 0.3
IC, COLLECTOR CURRENT (mAdc)
qVB, TEMPERATURE COEFFICIENT (mV/ C)
VCE, COLLECTOR- EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (mAdc)
Figure1.Normalized DC Current Gain
Figure 6. Current-Gain- Bandwidth Product
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Rev.B 12-Dec-06
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
WEITRON
1.0
TA=2 5 C
VCE=5 V
TA=2 5 C
0.8
VBE(s at) @IC/ IB =1 0
2.0
V,Voltage (Volts)
hFE, DC CURRENT GAIN (NORAMALIZED)
BC846 Series
1.0
0.5
0.6
[email protected]=-5 .0 V
0.4
0.2
0.2
VCE(s at) @IC/ IB =1 0
0.1 0.2
1.0
10
0
100
IC, COLLECTOR CURRENT (mA)
0.2
0.5
2.0
TA=2 5 C
1.6
2 0 mA
5 0 mA
1 0 0 mA
2 0 0 mA
1.2
0.8
0.4
IC=
1 0 mA
0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
1.4
1.8
q VB for VBE
-5 5 C to 1 2 5 C
2.2
2.6
3.3
20
0.2
0.5
1.0
fT, CURRENT-GAIN-BANDWIDTH PRODUCT
C. CAPACTIANCE (pF)
TA=2 5 C
Cib
10
8.0
6.0
Cob
0.2
0.5
1.0
2.0
5.0
10
20
50
10
20
50
100
200
VCE=5 .0 V
TA=2 5 C
200
100
50
20
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 12.Current-Gain-Bandwidth Product
Figure 11. Capacitance
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500
1.0
100
VR, REVERSE VOLTAGE (VOLTS)
W E IT R O N
5.0
Figure 10. Base-Emitter Temperature Coefficient
40
2.0
0.1
-2.0
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
4.0
200
1.0
Figure 9. Collector Saturation Region
20
100
Figure 8. "ON" Voltage
qVB TEMPERATURE COEFFICIENT (mV/ C)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7.DC Current Gain
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT(mA)
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Rev.B 12-Dec-06