PZT5401 PNP Epitaxial Planar Transistor COLLECTOR 2, 4 P b Lead(Pb)-Free SOT-223 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit Collector to Base Voltage VCBO -160 V Collector to Emitter Voltage VCEO -150 V Collector to Base Voltage VEBO -5 V Collector Current IC(DC) -600 A Total Device Disspation Ta =25°C PD 1.5 W Junction Temperature Tj +150 ˚C Storage Temperature Tstg -55 to +150 ˚C *Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min). ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage(1) IC=-1mA, I B=0 Emitter-Base Breakdown Voltage IE=-10µA, I C=0 Collector Cut-Off Current VCB=-120V, I E=0 Emitter-Cut-Off Current VEB=-3V, IC=0 WEITRON http://www.weitron.com.tw Symbol Min Max Max Unit BVCBO -160 - - V BVCEO -150 - - V BVEBO -5 - - V ICBO - - -50 nA IEBO - - -50 nA 1/4 14-Aug-07 PZT5401 ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Symbol Min Typ Max Unit hFE1 hFE2 hFE3 50 80 50 160 - 400 - - Collector-Emitter Saturation Voltage IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE(sat)1 VCE(sat)2 - - -200 -500 mV Base-Emitter Saturation Voltage IC=-10A, I B=-1mA IC=-50A, I B=-5mA VBE(sat)1 VBE(sat)2 - - -1 -1 V Characteristic ON CHARACTERISTICS(1) DC Current Gain VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA DYNAMIC CHARACTERISTICS Transition Frequency VCE=-10V, IC=-10mA, f=100MHz Output Capacitance VCB=-10V, IE=0, f=1MHz fT 120 - 300 MHz Cob - - 6 pF CLASSIFICATION OF hFE Rank A N C Range 80-200 100-240 160-400 WEITRON http://www.weitron.com.tw 2/4 14-Aug-07 PZT5401 WEITRON http://www.weitron.com.tw 3/4 14-Aug-07 PZT5401 SOT-223 Outline Dimensions unit:mm A F DIM 4 S B 1 2 3 D L G J C H WEITRON http://www.weitron.com.tw M K 4/4 A B C D F G H J K L M S MILLIMETERS MIN MAX 6.30 3.30 1.50 0.60 2.90 2.20 0.020 0.24 1.50 0.85 0 6.70 6.70 3.70 1.75 0.89 3.20 2.40 0.100 0.35 2.00 1.05 10 7.30 14-Aug-07