WSD451F Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 100m AMPERES 40 VOLTS Features: *Small mold type. *Low VF *High reliability. 3 Construction: Silicon epitaxial planer 1 2 SOT-323(SC-70) SOT-323 Outline Demensions Unit:mm A B T OP V IE W C D E G H K J WEITRON hpp://www.weitron.com.tw L M 1/3 Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 15-Aug-07 WEITRON WSD451F MaximumRatings (Ta=25°C Unless otherwise noted) Symbol Value Unit VRM 40 Volts Reverse Voltage (DC) VR 40 mA Average rectified forward current IO 100 mA IFSM 1 A TJ 125 °C Tstg 150 °C Characteristic Reverse Voltage (repetitive peak) Forward Current surge peak (60Hz, 1cyc) Operating Junction Temperature Range Storage Temperature Range ElectricalCharacteristics (TA=25 C Unless otherwise noted) Symbol Min Typ Max Unit Forward Voltage IF=100mA IF=10mA VF1 VF2 - - 0.55 0.34 Volts Capacitance between terminals (VR=10V, f=1.0MHz) CT - 6.0 - PF Reverse currect (VR=10V) IR - - 30 µAdc Characteristic DeviceMarking Item WSD451F WEITRON http://www.weitron.com.tw EqivalentCir cuitdiagram Marking 3 B4 , KL5 2/3 1 15-Aug-07 WSD451F WEITRON 1 10m Typ. pulse measurement REVERSE CURRENT : IR (A) 25 °C 25 °C °C 1m Ta = 12 5°C 10m 75 FORWARD CURRENT : IF (A) 100m 100µ 10µ 0 0.1 0.2 0.3 0.4 0.5 0.6 Ta=125°C 1m 100µ 75°C 10µ 25°C 1µ 0.1µ 0.7 Typ. pulse measurement 0 FORWARD VOLTAGE : VF (V) 10 15 20 25 30 35 REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics 100 100 10 Io CURRENT (%) CAPACITANCE BETWEEN TERMINALS : CT (pF) 5 1 80 60 40 20 0.1 0 5 10 15 20 0 0 25 75 100 125 Fig. 4 Derating curve (mounting on glass epoxy PCBs) Fig. 3 Capacitance between terminals characteristics WEITRON 50 AMBIENT TEMPERATURE : Ta (°C) REVERSE VOLTAGE : VR (V) http://www.weitron.com.tw 25 3/3 15-Aug-07