WEITRON WTC2306_09

WTC2306
N-Channel Enhancement
Mode Power MOSFET
3 DRAIN
DRAIN CURRENT
5.8 AMPERES
P b Lead(Pb)-Free
DRAIN SOURCE VOLTAGE
30 VOLTAGE
1
GATE
Features:
2
* Super High Dense Cell Design For Low RDS(on)
RDS(on) < 38mΩ @ VGS = 10V
* Rugged and Reliable
* Simple Drive Requirement
* SOT-23 Package
SOURCE
3
1
2
Applications:
SOT-23
* Power Management in Notebook Computer
* Portable Equipment
* Battery Powered System
Maximum Ratings (TA
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±12
V
ID
5.8
A
Pulsed Drain Current1
IDM
30
A
Total Power Dissipation (TA=25°C)
PD
1.4
W
RθJA
140
°C/W
TJ
-55~+150
°C
Tstg
-55~+150
°C
Continuous Drain Current
Maximum Junction-Ambient2
Operating Junction Temperature Range
Storage Temperature Range
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
Device Marking
WTC2306 = N06
WEITRON
http://www.weitron.com.tw
1/4
Rev.B 17-Aug-09
WTC2306
Electrical Characteristics (TA=25°C Unless Otherwise Specified)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
30
-
-
V
VGS (th)
0.7
-
1.4
V
Gate-Source Leakage Current
+12V
VDS=0V, VGS=-
IGSS
-
-
±100
nA
Zero Gate Voltage Drain Current
VDS=24V , VGS=0V
IDSS
-
-
1
µA
R DS(on)
-
45
34
31
62
43
38
mΩ
Gate Resistance
VGS=0V, VDS=0V, f=1HMz
Rg
6
7
7.5
Ω
Forward Transconductance
VDS=5V, ID=5A
gfs
10
15
-
S
Turn-On Delay Time(2)
VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω
td(on)
-
7
14
nS
Rise Time
VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω
tr
-
15
30
nS
-
38
76
nS
Static
Drain-Source Breakdown Voltage
VGS=0V, ID=250µA
Gate-Source Threshold Voltage
VDS=VGS, ID=250µA
Drain-Source On-Resistance
VGS=2.5V , ID=4.0A
VGS=4.5V , ID=5.0A
VGS=10V , ID=5.8A
Switching
Turn-O Time
VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω
t
)
Fall Time
VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω
tf
-
3
6
nS
Total Gate Charge(2)
VDS=15V, ID=5.8A,VGS=4.5V
Qg
-
11
14.3
nc
Gate-Source Charge
VDS=15V, ID=5.8A,VGS=4.5V
Qgs
-
1.6
2.08
nc
Gate-Drain Charge
VDS=15V, ID=5.8A,VGS=4.5V
Qgd
-
2.8
3.64
nc
Drain-Source Diode Forward Voltage(2)
VGS=0V, IS=1.0A
VSD
-
-
1.2
V
Continuous Source Current (Body Diode)
IS
-
-
2.5
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300µs, duty cycle ≤ 2%.
WEITRON
http://www.weitron.com.tw
2/4
Rev.B 17-Aug-09
WTC2306
TYPICAL ELECTRICAL CHARACTERISTICS
WEITRON
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3/4
Rev.B 17-Aug-09
WTC2306
SOT-23 Outline Dimension
SOT-23
Dim
A
B
C
D
E
G
H
J
K
L
M
A
B
TOP VIEW
C
D
E
G
H
K
J
WEITRON
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L
M
4/4
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
Rev.B 17-Aug-09