WTM2310A N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 5.0 AMPERES P b Lead(Pb)-Free DRAIN SOUCE VOLTAGE 60 VOLTAGE 1 GATE Features: 2 SOURCE * Simple Drive Requirement. * Super High Density Cell Design for Extremely Low RDS(ON). 1 2 3 1. GATE 2. DRAIN 3. SOURCE SOT-89 Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage V DS 60 V Gate-Source Voltage VG S ±20 V ID 5.0 4.0 A Pulsed Drain Current IDM 10 A Total Power Dissipation (T A =25°C ) PD 1.50 W Maximum Junction-Ambient 3 R θJA 83.3 °C/W Operating Junction Temperature Range TJ -55~+150 °C Tstg -55~+150 °C Continuous Drain Current TA=25°C TA=70°C Storage Temperature Range Note 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≤ 300us, duty cycle ≤ 2%. 3. Surface mounted on FR4 board, t ≤10sec. Device Marking WTM2310A = 2310A WEITRON http://www.weitron.com.tw 1/5 04-Feb-10 WTM2310A Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 60 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.5 - 1.5 V VDS=VGS, ID=250uA gfs - 12 - S VDS=15V, ID=4A IGSS - - ±100 nA VGS= ±20V - - 1 uA VDS=60V, VGS=0 - - 10 uA VDS=60V, VGS=0 - - 115 - - 125 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) Static Drain-Source On-Resistance IDSS RDS(ON) m Total Gate Charge2 Qg - 4.0 - Gate-Source Charge Qgs - 1.2 - Gate-Drain (“Miller”) Change Qgd - 1.0 - Td(on) - 6 - Tr - 12 - Td(off) - 18 - Tf - 10 - Input Capacitance Ciss - 320 - Output Capacitance Coss - 42 - Reverse Transfer Capacitance Crss - 20 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Test Conditions VGS=10V, ID=5.0A VGS=4.5V, ID=4.5A nC ID=4A VDS=30V VGS=4.5V ns VDD=30V ID=2.5A VGS=10V RG=6 RL=12 pF VGS=0V VDS=30V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions IS=2.5A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 3. Surface mounted on FR4 board, t WEITRON http://www.weitron.com.tw 2%. 10sec. 2/5 04-Feb-10 WTM2310A I D (A) I D (A) Characteristics Curve VDS (V) VGS (V) Fig 2. Transfer Characteristics RDS(ON) ( ) RDS(ON) Normalized Fig 1. Typical Output Characteristics TJ ( Fig 3. On-Resistance vs. Drain Current and Gate Voltage Fig 4. On-Resistance vs. Junction Temperature ) I S (A) RDS(ON) ( ) I D (A) VGS (V) VSD (V) Fig 5. On-Resistance vs. Gate-Source Voltage Fig 6. Body Diode Characteristics WEITRON http://www.weitron.com.tw 3/5 04-Feb-10 I D (A) Power (W) WTM2310A Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Maximum Power Dissipation VGS (V) Capacitance (pF) VDS (V) VDS (V) Qg (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Normalized Maximum Transient Thermal Impedance WEITRON http://www.weitron.com.tw 4/5 04-Feb-10 WTM2310A SOT-89 Outline Dimensions Dim E G H B K A B C D E G H J K L A C J unit:mm D L WEITRON http://www.weitron.com.tw 5/5 SOT-89 Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 04-Feb-10