K2611B
Silicon N-Channel MOSFET
Features
■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 72nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This N-Channel enhancement mode power field effect transistors
are produced using Winsemi's proprietary, planar stripe ,DMOS
technology. This advanced technology has been especially tailored
to minimize on-state resistance , provide superior switching
performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
900
V
Continuous Drain Current(@Tc=25℃)
11
A
Continuous Drain Current(@Tc=100℃)
7
A
45.6
A
±30
V
Drain Source Voltage
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
1000
mJ
EAR
Repetitive Avalanche Energy
(Note1)
30
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.0
V/ ns
Total Power Dissipation(@Tc=25℃)
300
W
Derating Factor above 25℃
2.38
W/℃
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
TL
Channel Temperature
300
℃
PD
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.42
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
40
℃/W
Rev.A Nov.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
K2611B
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=900V,V GS=0V
-
-
10
µA
100
µA
Drain cut -off current
IDSS
VDS=720V,Tc=125℃
Drain -source breakdown voltage
V(BR)DSS
ID=250µA,VGS=0V
900
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250µA
3.0
-
5.0
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=5.5A
-
0.95
1.10
Ω
Forward Transconductance
gfs
VDS=50V,ID=5.5A
-
12
-
S
Input capacitance
Ciss
VDS=25V,
-
2700
3500
Reverse transfer capacitance
Crss
VGS=0V,
-
30
40
Output capacitance
Coss
f=1MHz
-
260
340
VDD=450V,
-
135
280
ID=11A
-
65
140
RG=25Ω
-
90
190
-
165
340
-
72
94
-
16
-
-
35
-
Min
Type
Max
Turn-on Rise time
tr
Turn-on Delay time
td(on)
Switching time
pF
ns
Turn-on Fall time
tf
Turn-off Delay time
(Note4,5)
td(off)
Total gate charge(gate-source
VDD=720V,
Qg
plus gate-drain)
VGS=10V,
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=11A
(Note4,5)
nC
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Unit
Continuous drain reverse current
IDR
-
-
-
11
A
Pulse drain reverse current
IDRP
-
-
-
45
A
Forward voltage(diode)
VDSF
IDR=11A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=11A,VGS=0V,
-
850
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
11.2
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=15mH IAS=11A,VDD=50V,R G=25Ω,Starting TJ=25℃
3.ISD≤11A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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K2611B
Fig.1 On State Characteristics
Fig.3 On-Resistance Variation vs
Drain current and Gate Voltage
Fig.2 Transfer Current Characteristics
Fig.4 Body Diode Forward voltage
Variation with Source Current
And Temperature
Fig.5 Capacitance Characteristics
Fig.6 Gate Charge Characteristics
3/7
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K2611B
Fig.7 Breakdown Voltage Variation
Fig.8 On-Resistance Variation
vs.Temperature
vs.Temperature
Fig.9 Maximum Safe Operation Area
Fig.10 Maximum Drain Current
vs Case temperature
Fig.11 Transient thermal Response Curve
4/7
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K2611B
Fig.12 Gate Test circuit & Waveform
Fig.13 Resistive Switching Test Circuit & Waveform
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
5/7
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K2611B
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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K2611B
3PB Package Dimension
TOTO-3PB
Unit:mm
7/7
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