WINSEMI SBP13007-K

SBP13007-K
h Vol
N Power Tra
nsisto
Hig
igh
olttage Fast-Sw
-Swiitching NP
NPN
ran
torr
Fea
eattures
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
B
C
rip
General Desc
scrip
ripttion
TO220
E
This device is designed for high voltage, High speed
switching characteristics required such as lighting
system ,switching mode power supply.
um Ratin
gs
Absolute Maxim
imu
ing
Symbol
Parameter
Test Conditions
Value
Units
VCES
Collector-Emitter Voltage
VBE = 0
700
V
VCEO
Collector-Emitter Voltage
IB = 0
400
V
VEBO
Emitter-Base Voltage
Collector Current
IC = 0
9.0
V
IC
8.0
A
ICP
Collector pulse Current
16
A
IB
Base Current
4.0
A
IBM
Base Peak Current
8.0
A
PC
tP = 5ms
Total Dissipation at Tc = 25℃
80
Total Dissipation at Ta = 25℃
2.05
W
TJ
Operation Junction Temperature
- 40 ~ 150
℃
TSTG
Storage Temperature
- 40 ~ 150
℃
Value
Units
Tc: Case temperature (good cooling)
Ta:Ambient temperature (without heat sink)
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to Case
1.56
℃/W
RθJA
Thermal Resistance Junction to Ambient
62.5
℃/W
Rev.A Jun.2011
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T01-3
SBP13007-K
tr
arac
sti
cs (TC=25℃ unless otherwise noted)
Elec
ectr
triical Ch
Cha
actteri
ris
tics
Value
Symbol
VCEO(sus)
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
Min
Typ
Max
400
-
-
-
-
VCE(sat)
Collector-Emitter Saturation Voltage
1.5
V
2.0
Ic=8.0A,Ib=2.0A
Ic=5.0A,Ib=1.0A
V
1.0
Ic=2.0A,Ib=0.4A
Ic=5.0A,Ib=1.0A
Units
-
-
2.5
-
-
-
-
-
-
Vce=5V,Ic=2.0A
8
-
40
Vce=5V, Ic=5.0A
5
-
40
1.5
3.0
0.17
0.4
V
Tc=100℃
Ic=2.0A,Ib=0.4A
VBE(sat)
Base-Emitter Saturation Voltage
Ic=5.0A,Ib=1.0A
Ic=5.0A,Ib=1.0A
1.2
1.6
1.5
V
V
Tc=100℃
ICBO
hFE
Collector-Base Cutoff Current
Vcb=700V
(Vbe=-1.5V)
Vcb=700V, Tc=100℃
DC Current Gain
Resistive Load
ts
Storage Time
tf
Fall Time
Inductive Load
ts
Storage Time
tf
Fall Time
Inductive Load
ts
Storage Time
tf
Fall Time
VCC=125V ,
IB1=1.0A ,
Tp=25㎲
Ic=5.0A
IB2=-1.0A
1.0
5.0
mA
-
VCC=15V ,Ic=5A
IB1=1.0A , IB2=-2.5A
L=0.35mH,Vclamp=300V
-
0.8
2.0
-
0.06
0.12
VCC=15V ,Ic=1A
IB1=0.4A , IB2=-1.0A
L=0.35mH,Vclamp=300V
Tc=100℃
-
1.0
3.0
-
0.07
0.15
㎲
㎲
㎲
Not
e:
Note
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
SBP13007-K
Fig. 1 DC Current Gain
Fig. 3 Base--Emitter Saturation Voltage
Fig.5 Power Derating
Fig. 2 Collector-Emitter Saturation Voltage
Fig. 4 Safe Operation Area
Fig.6 Reverse Biased Safe Operation Area
3/5
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
SBP13007-K
d Switch
Resistive Loa
oad
tchiing Test Circu
cuiit
ct
ive Load Switc
hing & RBSOA Test Ci
rcu
it
Indu
duct
ctive
tch
Circu
rcuit
4/5
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
SBP13007-K
220 Packa
ge Di
mension
TOO-220
ackag
Dim
Unit
Unit::mm
5/5
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.