07-O SBP130 300 h Vol N Power Tra nsisto Hig igh olttage Fast-Sw -Swiitching NP NPN ran torr Fea eattures ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA B C rip General Desc scrip ripttion TO220 E This device is designed for high voltage, High speed switching characteristics required such as lighting system ,switching mode power supply. um Ratin gs Absolute Maxim imu ing Symbol Parameter Test Conditions Value Units VCES Collector-Emitter Voltage VBE = 0 700 V VCEO Collector-Emitter Voltage IB = 0 400 V VEBO IC = 0 9.0 V IC Emitter-Base Voltage Collector Current 8.0 A ICP Collector pulse Current 16 A IB Base Current 4.0 A IBM Base Peak Current 8.0 A PC tP = 5ms Total Dissipation at Tc = 25℃ 80 Total Dissipation at Ta = 25℃ 2.05 W TJ Operation Junction Temperature - 40 ~ 150 ℃ TSTG Storage Temperature - 40 ~ 150 ℃ Value Units Tc: Case temperature (good cooling) Ta:Ambient temperature (without heat sink) Thermal Characteristics Symbol Parameter RθJc Thermal Resistance Junction to Case 1.56 ℃/W RθJA Thermal Resistance Junction to Ambient 62.5 ℃/W Jan 2008. Rev. 0 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. T01-3 SBP13007-O tr arac sti cs (TC=25℃ unless otherwise noted) Elec ectr triical Ch Cha actteri ris tics Value Symbol VCEO(sus) Parameter Test Conditions Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 Min Typ Max 400 - - - - VCE(sat) Collector-Emitter Saturation Voltage 2.0 V 3.0 Ic=8.0A,Ib=2.0A Ic=5.0A,Ib=1.0A V 1.0 Ic=2.0A,Ib=0.4A Ic=5.0A,Ib=1.0A Units - - 2.5 - - - - - - Vce=5V,Ic=2.0A 10 - 40 Vce=5V, Ic=5.0A 5 - 40 1.5 3.0 0.17 0.4 V Tc=100℃ Ic=2.0A,Ib=0.4A VBE(sat) Base-Emitter Saturation Voltage Ic=5.0A,Ib=1.0A Ic=5.0A,Ib=1.0A 1.2 1.6 1.5 V V Tc=100℃ ICBO hFE Collector-Base Cutoff Current Vcb=700V (Vbe=-1.5V) Vcb=700V, Tc=100℃ DC Current Gain Resistive Load ts Storage Time tf Fall Time Inductive Load ts Storage Time tf Fall Time Inductive Load ts Storage Time tf Fall Time VCC=125V , IB1=1.0A , Tp=25㎲ Ic=5.0A IB2=-1.0A 1.0 5.0 mA - VCC=15V ,Ic=5A IB1=1.0A , IB2=-2.5A L=0.35mH,Vclamp=300V - 0.8 2.0 - 0.06 0.12 VCC=15V ,Ic=1A IB1=0.4A , IB2=-1.0A L=0.35mH,Vclamp=300V Tc=100℃ - 1.0 3.0 - 0.07 0.15 ㎲ ㎲ ㎲ Not e: Note Pulse Test : Pulse width 300, Duty cycle 2% 2/5 Steady, keep you advance SBP13007-O Fig. 1 DC Current Gain Fig. 2 Collector-Emitter Saturation Voltage Fig. 3 Base--Emitter Saturation Voltage Fig.5 Power Derating Fig. 4 Safe Operation Area Fig.6 Reverse Biased Safe Operation Area 3/5 Steady, keep you advance SBP13007-O d Switch Resistive Loa oad tchiing Test Circu cuiit ct ive Load Switc hing & RBSOA Test Ci rcu it Indu duct ctive tch Circu rcuit 4/5 Steady, keep you advance SBP13007-O 220 Packa ge Di mension TOO-220 ackag Dim Unit Unit::mm 5/5 Steady, keep you advance