SBP13009D High Voltage Fast-Switching NPN Power Transistor Features ◆ ◆ ◆ ◆ Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in free wheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCES Collector-Emitter Voltage VBE = 0 700 V VCEO Collector-Emitter Voltage IB = 0 400 V VEBO Emitter-Base Voltage IC = 0 9.0 V IC Collector Current 12 A ICP Collector pulse Current 25 A IB Base Current 6.0 A 12 A IBM PC Base Peak Current tP = 5ms Total Dissipation at Tc = 25℃ 100 Total Dissipation at Ta = 25℃ 2.2 W TJ Operation Junction Temperature - 40 ~ 150 ℃ TSTG Storage Temperature - 40 ~ 150 ℃ Value 1.25 Units ℃/W 40 ℃/W Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RθJc Parameter Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient Jan 2009. Rev. 0 1/5 Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved. SBP13009D Electrical Characteristics (TC=25℃ Value Symbol VCEO(sus) unless otherwise noted) Parameter Test Conditions Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 Min Typ Max 400 - - - - VCE(sat) 1.0 V 1.5 Collector-Emitter Saturation Voltage Ic=12A,Ib=3.0A Ic=8.0A,Ib=1.6A V 0.5 Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A Units - - - - - - - - 2.0 V Tc=100℃ I Ic=5.0A,Ib=1.0A VBE(sat) Base-Emitter Saturation Voltage Ic=8.0A,Ib=1.6A Ic=8.0A,Ib=1.6A 1.2 1.6 1.5 V V Tc=100℃ ICBO hFE 1.0 Collector-Base Cutoff Current Vcb=700V (Vbe=-1.5V) Vcb=700V, Tc=100℃ DC Current Gain Vce=5V,Ic=5.0A 10 - 40 Vce=5V, Ic=8.0A 6 - 40 1.5 3.0 0.17 0.4 Storage Time tf Fall Time mA - Resistive Load ts 5.0 VCC=125V , IB1=1.6A , Tp=25㎲ Ic=6.0A IB2=-1.6A ㎲ Inductive Load ts Storage Time tf Fall Time Inductive Load VCC=15V ,Ic=5A IB1=1.6A , Vbe(off)=5V L=0.35mH,Vclamp=300V - 0.8 2.0 - 0.04 0.1 - 0.8 2.5 - 0.05 0.15 ㎲ ts Storage Time tf Fall Time VCC=15V ,Ic=1A IB1=0.4A , Vbe(off)=5V L=0.2mH,Vclamp=300V Tc=100℃ fT Current Gain Bandwidth Product IC=0.5A ,VCE=10V 4 - - MHz VF Diode Forward Voltage IF=2A - - 2.5 V COB Output Capacitance IC=0.5A ,VCE=10V - 6.5 Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 . ㎲ pF SBP13009D Fig. 1 DC Current Gain Fig. 3 Base--Emitter Saturation Voltage Fig.5 Power Derating Fig. 2 Collector-Emitter Saturation Voltage Fig. 4 Safe Operation Area Fig.6 Reverse Biased Safe Operation Area 3/5 SBP13009D Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 . SBP13009D TO-220 Package Dimension 5/5