WINSEMI WCPA25C60

WCPA25C60
Silicon Controlled Rectifiers
Features
■ Repetitive Peak Off-State Voltage:600V
■ R.M.S On-State Current (IT(RMS)=25A)
■ Low On-State Voltage(1.3V(Typ.)@ITM)
■ Non-isolaed Type
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Parameter
Symbol
Condition
Value
Units
600
V
VDRM
Repetitive Peak Off-State Voltage
IT(AV)
Average On-State Current
Half Sine Wave:TC=102°C
16
A
IT(RMS)
R.M.S On-State Current
180°conduction Angle
25
A
tp=10ms
300
tp=8.3ms
314
t=10ms
450
A2s
ITSM
Non Repetitive Surge Peak on-state Current
I2t
I2t for Fusing
A
di/dt
Critical rate of rise of on-state current
50
A/㎲
PGM
Forward Peak Gate Power Dissipation
20
W
1
W
PG(AV)
Forward Average Gate Power Dissipation
Over any 20ms period
IFGM
Forward Peak Gate Current
5
A
VRGM
Reverse Peak Gate Voltage
5
V
Operating Junction Temperature
-40~125
°C
Storage Temperature
-40~150
°C
TJ
TSTG
Thermal Characteristics
Symbol
Parameter
Min
Value
Typ
Max
Units
RθJc
Thermal Resistance Junction to Case
-
-
1.0
℃/W
RθJA
Thermal Resistance Junction to Ambient
-
-
60
℃/W
Rev.A Oct.2010
[email protected] Microelectronics Co., Ltd., All right reserved.
WCPA25C60
Electrical Characteristics (TC=25℃,unless otherwise noted)
Symbol
Parameter
Test Conditions
VAK=VDRM
IDRM
Repetitive Peak Off-State Current
Peak On-State Voltage (1)
IGT
Gate Trigger Current (2)
VGT
Gate Trigger Voltage (2)
VGD
Non-Trigger Gate Voltage (1)
dv/dt
Critical Rate of Rise Off-State Voltage
Value
Typ Max
Units
-
-
5
μA
-
-
2
mA
-
1.3
1.6
V
3
-
25
mA
-
-
1.3
V
0.2
-
-
V
800
-
-
V/㎲
-
-
50
mA
60
mA
TC=25℃
TC=125℃
VTM
Min
ITM=38A, tp=380㎲
VD=12V,RL=30Ω
TC=25℃
VD=12V,RL=30Ω
TC=25℃
VD=VDRM ,RL=3.3KΩ
TJ=125℃
Linear slope up to
VD=2/3VDRM, gate open
TJ=125℃
IH
Holding Current
IL
Dynamic resistance
IT=500mA, Gate Open
TC=25℃
IG=1.2IGT
*Notes:
1 Pulse Width ≤1.0ms,Duty cycle≤1%
2 RGK Current is not Included in measurement.
2/5
Steady, keep you advance
WCPA25C60
Fig .2 On-State Characteristics
Fig.1Gate Characteristics
Fig. 3 Typical Forward Voltage
Fig. 4 Thermal Response
3/5
Steady, keep you advance
WCPA25C60
4/5
Steady, keep you advance
WCPA25C60
TO
-220 Package Dimension
TO-220
Unit: mm
5/5
Steady, keep you advance