20N60
WFF
WFF20N60
Silicon N-Channel MOSFET
Features
�
20A,600V,RDS(on)(Max0.39Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 150nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology.this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially wellsuited for AC-DC switching
power supplies, DC-DC powerConverters high voltage H-bridge motor
drive PWM
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current(@Tc=25℃)
20
A
Continuous Drain Current(@Tc=100℃)
15
A
80
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAR
Repetitive Avalanche Energy
(Note1)
30
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
5.0
V/ ns
PD
Total Power Dissipation(@Tc=25℃)
43
W
TJ,Tstg
Junction and Storage Temperature
-55~150
℃
300
℃
TL
Channel Temperature
Thermal Characteristics
Symbol
RQJC
Parameter
Thermal Resistance , Junction -to -Case
Value
Min
Typ
Max
-
-
0.25
Rev.A Mar.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Units
℃/W
20
N60
WFF
WFF20
20N
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Min
Type
Max
Unit
IGSS
VGS=±30V,V DS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,V GS=0V
-
-
200
µA
VGS=0V,TJ=125℃
-
-
1000
µA
ID=250µA,VGS=0V
600
-
-
V
-
0.5
-
V/℃
Drain cut -off current
IDSS
Drain -source breakdown voltage
V(BR)DSS
Breakdown voltage Temperature
△BVDSS/
△TJ
coefficient
Test Condition
ID=250µA,Referenced
to 25℃
Gate threshold voltage
VGS(th)
VDS=VGS,ID=4mA
3
-
5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=10A
-
-
0.39
Ω
Forward Transconductance
gfs
VDS≥10V,ID=10A
11
18
-
S
Input capacitance
Ciss
VDS=25V,
-
4500
Reverse transfer capacitance
Crss
VGS=0V,
-
140
Output capacitance
Coss
f=1MHz
-
420
tr
VGS=10V
-
45
60
VDS=300V,
-
20
40
ID=10A
-
40
60
-
70
90
-
150
170
-
30
40
-
60
85
Min
Type
Max
Unit
-
-
20
A
IDR=ISA,VGS=0V
-
-
1.5
V
250
ns
-
µC
Rise time
Turn-on time
Switching time
ton
Fall time
tf
Toff
Turn-off time
Total gate charge(gate-source
RG=2.00Ω
pF
ns
VDS=300V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=10A
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Continuous drain reverse current
Test Condition
IDR
-
Forward voltage(diode)
VDSF
Reverse recovery time
trr
IDR=10A,VGS=0V,
-
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
1
Note 1.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
2. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/3
Steady, keep you advance
20
N60
WFF
WFF20
20N
TO220F Package Dimension
TO-220F
Unit:mm
3/3
Steady, keep you advance