WFF2N60 on N-C hannel MOS FET Silic Silico N-Ch MOSF Features ■2A,600V, RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. Absolute Maximum Ratings Symbol VDSS Value Units Drain Source Voltage Parameter 600 V Continuous Drain Current(@Tc=25℃) 2.0* A Continuous Drain Current(@Tc=100℃) 1.5* A 9.5* A ID IDM Drain Current Pulsed (Note1) ±30 V V GS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 140 mJ EAR Repetitive Avalanche Energy (Note 1) 2.8 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 23 W 0.18 W/℃ -55~150 ℃ 300 ℃ dv/dt Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature Channel Temperature *Drain current limited by junction temperature Thermal Characteristics Symbol Parameter Min Value Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 5.5 ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Re v. B1 N ov. 2007 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. T03-2 WFF2N60 ` Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Symbol Test Condition Min Type Max Unit IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V VDS = 600 V, VGS = 0 V - - 10 μA VDS = 480 V, Tc = 125°°C - - 100 μA IDSS Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 600 - - V Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID =0.8A - 4.3 5 Ω Forward Transconductance gfs VDS = 50 V, ID =0.8A - 2.0 - S Input capacitance C iss VDS = 25 V, - 270 350 Reverse transfer capacitance Crss VGS = 0 V, - 6 8 Output capacitance Coss f = 1 MHz - 40 50 tr VDD =300 V, - 10 30 ton ID = 2.0 A - 25 60 tf RG=25 Ω - 20 50 - 25 60 - 9.0 11 - 1.6 - - 4.3 - Rise time Turn−on time pF Switching time ns Fall time Turn−off time (Note4,5) toff Total gate charge (gate−source plus gate−drain) VDD = 320 V, Qg VGS = 10 V, Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID = 6.5 A (Note4,5) nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 2.0 A Pulse drain reverse current IDRP - - - 9.5 A Forward voltage (diode) VDSF IDR = 2 A, VGS = 0 V - - 1.4 V Reverse recovery time trr IDR = 2.0A, VGS = 0 V, - 180 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 0.72 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH,IAS=2.0A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤2.0A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance WFF2N60 Fig. 1 On-State Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.5 On-Resistance Variation vs Junction Temperature Fig.2 Transfer Current Characteristics Fig.4 On-State Current vs Allowable Case Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, keep you advance WFF2N60 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 Steady, keep you advance WFF2N60 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance WFF2N60 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance WFF2N60 22 0F Pa ckage Dimension TOO-22 220 Pac 7/7 Steady, keep you advance