N1N6 0N WF WFN 1N60 Silicon N-Ch annel MOS FET Cha OSF Features ■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description Th is Power MO SFET is pro du ced using Winsemi ’s ad van ced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS. Absolute Maximum Ratings Symbol VDSS Parameter Value Units Drain Source Voltage 600 V Continuous Drain Current(@Tc=25℃) 0.5 A Continuous Drain Current(@Tc=100℃) 0.31 A 2.0 A ±30 V ID IDM Drain Current Pulsed (Note1) V GS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 47 mJ E AR Repetitive Avalanche Energy (Note 1) 3.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.2 V/ns 3.0 W 0.025 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature Channel Temperature Thermal Characteristics Symbol Parameter R QJC R QJA Value Units Min Typ Max Thermal Resistance, Junction-to-Case - - 41.7 ℃/W Thermal Resistance, Junction-to-Ambient - - 120 ℃/W Rev.A Apr.2011 1 /7 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. N1N6 0N WF WFN 1N60 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Symbol Test Condition Min Type Max Unit IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V VDS = 600 V, VGS = 0 V - - 10 μA VDS = 480 V, Tc = 125°°C - - 100 μA 600 - - V ID=250μA,Referenced to25℃ - 0.6 - V/℃ IDSS Drain−source breakdown voltage V(BR)DSS Break Voltage Temperature ΔBV DSS / ID = 250 μA, VGS = 0 V ΔTJ Coefficient Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 0.5A - 11 15 Ω Forward Transconductance gfs VDS = 40 V, ID = 0.5A - 0.8 - S Input capacitance C iss VDS = 25 V, - 178 221 Reverse transfer capacitance C rss VGS = 0 V, - 4 5 Output capacitance C oss f = 1 MHz - 19 27 VDD =300 V, - 16 46 ID =1A - 45 104 - 25 61 - 36 81 - 6.1 7.2 Turn−on delay time Rise time td(on) tr Switching time Turn−off delay time Fall time td(off) Gate−source charge Gate−drain (“miller”) Charge (Note4,5) tf Total gate charge (gate−source plus gate−drain) RG=25Ω pF ns VDD =4 80 V, Qg Qgs VGS = 10 V, nC ID = 1 A (Note4,5) Qgd - 1.0 - - 3.0 - Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 1.0 A Pulse drain reverse current IDRP - - - 4.0 A Forward voltage (diode) VDSF IDR = 1A, VGS = 0 V - - 1.0 V Reverse recovery time trr IDR = 1A, VGS = 0 V, - 185 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 0.51 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=59mH,IAS=1A,VDD =50V,RG=25Ω,Starting T J=25℃ 3.ISD≤1A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2 /7 Steady, keep you advance N1N6 0N WF WFN 1N60 3 /7 Steady, keep you advance N1N6 0N WF WFN 1N60 4 /7 Steady, keep you advance N1N6 0N WF WFN 1N60 10 Gate Tes cuit & Waveform Fig. Fig.1 estt Cir Circ 11 Res e Swit ching Tes cuit & Waveform Fig. Fig.1 esiistiv ive itc estt Cir Circ 12 Un clamped In ducti ve Switchi ng Test Cir cuit & Waveform Fig. Fig.1 Unc Ind tiv hin Circ 5 /7 Steady, keep you advance N1N6 0N WF WFN 1N60 13 Pea k Diode Rec overy dv/dt Test Cir cuit & Waveform Fig. Fig.1 eak eco Circ 6 /7 Steady, keep you advance N1N6 0N WF WFN 1N60 92 TO TO92 cka ge Dim ension Pa Pac kage Dime Unit: mm 7 /7 Steady, keep you advance