WFSA6503 N- Channel and P-Channel Silicon MOSFETs Features ■ Low On-resistance. ■ Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4.5V/-4.5V supply voltage contained in a single package. ■ High-density mounting. ■ RoHS compliant. SOP-8 Applications ■ General-Purpose Switching Device ■ For motor drives, inverters. Absolute Maximum Ratings at Ta=250C Parameter Symbol Conditions Ratings N-Ch P-Ch Unit Drain-to-Source Voltage VDSS Drain-Source Voltage 30 -30 V Gate-to-Source Voltage VGSS Gate-Source Voltage ±20 ±20 V Drain Current (DC) ID Continuous Drain Current 6.9 -6 A Drain Current (Pulse) IDP PW≤10uS, duty cycle≤1% 30 -30 A Allowable Power Dissipation PD 1.3 1.3 Total Dissipation PT 1.7 1.7 Channel Temperature Tch Storage Temperature Tstg Mounted on a ceramic board 2 (1000mm ×0.8mm) 1unit Mounted on a ceramic board 2 (1000mm ×0.8mm) Maximum Junction Temperature Storage Temperature Range Rev.A Feb.2012 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. W W 0 C 0 C 150 -55~+150 WFSA6503 N-Channel Electrical Characteristics at Ta=250C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ max Unit V(BR)DSS ID=250uA, VGS=0V 30 - - V Zero-Gate Voltage Drain Current IDSS VDS=24V, VGS=0V - - 1 uA Gate-to-Source Leakage Current IGSS VGS=+20V, VDS=0V - - +100 nA VGS(th) VDS= VGS, ID=250uA 1.0 1.6 2.0 V RDS(ON) ID=6.9A, VGS=10V - 17 25 mΩ RDS(ON) ID=5A, VGS=4.5V - 24 40 mΩ Gate Threshold Voltage Static Drain-to-Source On-State Resistance Input Capacitance Ciss VDS=15V, - 680 820 Output Capacitance Coss VGS=0V, - 102 - Reverse Transfer Capacitance Crss f=1MHz - 77 - Turn-on Delay Time td(on) VGS=10V, - 4.6 7 tr VDS=15V, - 4.1 6 td(off) RL=2.2Ω, - 20.6 30 tf RGEN=3Ω - 5.2 8 Total Gate Charge Qg VDS=15V, - 6.74 8.1 Gate-to-Source Charge Qgs VGS=10V, - 1.82 - Gate-to-Drain “Miller” Charge Qgd ID=6.9A - 3.2 - Diode Forward Voltage VSD - 0.76 1.3 Rise Time Turn-off Delay Time Fall Time IS=1A, VGS=0V pF nS nC V 2/10 Steady, keep you advance WFSA6503 N-Channel Typical Characteristics at Ta=250C 3/10 Steady, keep you advance WFSA6503 4/10 Steady, keep you advance WFSA6503 P-Channel Electrical Characteristics at Ta=250C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ max Unit V(BR)DSS ID=-250uA, VGS=0V -30 - - V Zero-Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V - - -1 uA Gate-to-Source Leakage Current IGSS VGS=+20V, VDS=0V - - +100 nA VGS(th) VDS= VGS, ID=250uA -1.0 -1.4 -2.0 V RDS(ON) ID=-6A, VGS=-10V - 40 50 mΩ RDS(ON) ID=-5A, VGS=-4.5V - 60 76 mΩ Gate Threshold Voltage Static Drain-to-Source On-State Resistance Input Capacitance Ciss VDS=-15V, - 920 1100 Output Capacitance Coss VGS=0V, - 190 - Reverse Transfer Capacitance Crss f=1MHz - 122 - Turn-on Delay Time td(on) VGS=-10V, - 7.7 11.5 tr VDS=-15V, - 5.7 8.5 td(off) RL=2.7Ω, - 20.2 30 tf RGEN=3Ω - 9.5 14 Total Gate Charge Qg VDS=-15V, - 9.6 11.6 Gate-to-Source Charge Qgs VGS=-10V, - 2.7 11.6 - 4.5 - - -0.8 -1.3 Rise Time Turn-off Delay Time Fall Time Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD ID=-6A IS=-1A, VGS=0V pF nS nC V 5/10 Steady, keep you advance WFSA6503 P-Channel Typical Characteristics at Ta=250C 6/10 Steady, keep you advance WFSA6503 7/10 Steady, keep you advance WFSA6503 Switching Time Test Circuit 8/10 Steady, keep you advance WFSA6503 SOP8 Package Dimension Unit:mm 9/10 Steady, keep you advance