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con N-Ch
annel MOS
FET
Sili
lic
Cha
OSF
Features
■ 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 43nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,DMOS technology.This latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially wellsuited for
high efficiency switch model power supplies, power factor correction
and half bridge and full bridge resonant topology line a electronic
lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
500
V
Continuous Drain Current(@Tc=25℃)
13
A
Continuous Drain Current(@Tc=100℃)
8
A
52
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
845
mJ
EAR
Repetitive Avalanche Energy
(Note1)
5
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
3.5
V/ ns
Total Power Dissipation(@Tc=25℃)
218
W
Derating Factor above 25℃
1.56
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.58
℃/W
RQCS
Thermal Resistance , Case-to-Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=500V,VGS=0V
-
-
1
µA
10
µA
Drain cut -off current
IDSS
VDS=400V,TC=125℃
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
Breakdown voltage Temperature
△BVDSS/
ID=250µA,Referenced
△TJ
Coefficient
500
-
-
V
-
0.5
-
V/℃
to 25℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
3
-
4.5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=6.5A
-
0.37
0.46
Ω
Forward Transconductance
gfs
VDS=50V,ID=6.5A
-
15
-
S
Input capacitance
Ciss
VDS=25V,
-
1580
2055
Reverse transfer capacitance
Crss
VGS=0V,
-
20
25
Output capacitance
Coss
f=1MHz
-
180
235
VDD=250V,
-
25
60
ID=13A
-
100
210
tf
RG=9.1Ω
-
130
270
toff
RD=31Ω
-
100
210
-
43
56
-
7.5
-
-
18.5
-
Min
Type
Max
Rise time
tr
Turn-on time
ton
Switching time
pF
ns
Fall time
Turn-off time
Total gate charge(gate-source
(Note4,5)
VDD=400V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=13A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Unit
Continuous drain reverse current
IDR
-
-
-
13
A
Pulse drain reverse current
IDRP
-
-
-
52
A
Forward voltage(diode)
VDSF
IDR=13A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=13A,VGS=0V,
-
442
633
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
2.16
3.24
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=500uH IAS=13A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤13A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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Fig.1 On State Characteristics
Fig.2 Transfer Characteristics
Fig.3 Capacitance Variation vs
Drain Voltage
Fig.4 Maximum Avalanche Energy
Fig.5 On-Resistance Variation vs
Junction temperature
vs On-State Current
Fig.6 Gate Charge Characteristics
3/7
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Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current
vs Case temperature
Fig.9 Transient thermal Response Curve
4/7
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Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
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Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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ckage Dim
ension
TO-3P Pa
Pac
Dime
Unit:mm
7/7
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