WFW9N90W
Silicon N-Channel MOSFET
Features
■ 9A,900V, RDS(on)(Max1.35Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 58nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This N-Channel enhancement mode power field effect
transistors are produced using Winsemi's proprietary, planar
stripe ,DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power
supplies.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
900
V
Continuous Drain Current(@Tc=25℃)
9
A
Continuous Drain Current(@Tc=100℃)
5.7
A
27
A
±30
V
Drain Source Voltage
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
663
mJ
EAR
Repetitive Avalanche Energy
(Note1)
15
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
68
W
0.54
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
1.85
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WFW9N90W
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±10
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
IDSS
VDS=720V,VGS=0V
-
-
100
µA
V(BR)DSS
ID=10mA,VGS=0V
900
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=1mA
3
-
5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=4.5A
-
1.1
1.35
Ω
Forward Transconductance
gfs
VDS=15V,ID=4.5A
3.0
7.0
-
S
Input capacitance
Ciss
VDS=25V,
-
2040
-
Reverse transfer capacitance
Crss
VGS=0V,
-
45
-
Output capacitance
Coss
f=1MHz
-
190
-
VDD=400V,
-
25
-
ID=9A
-
60
-
RG=100Ω
-
20
-
-
95
-
-
58
-
-
32
-
-
26
-
Min
Type
Max
Gate-source breakdown voltage
Drain cut -off current
Drain -source breakdown voltage
Rise time
tr
Turn-on time
ton
Switching time
pF
ns
Fall time
tf
Turn-off time
(Note4,5)
toff
Total gate charge(gate-source
VDD=400V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=9A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Unit
Continuous drain reverse current
IDR
-
-
-
9
A
Pulse drain reverse current
IDRP
-
-
-
27
A
Forward voltage(diode)
VDSF
IDR=9A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=9A,VGS=0V,
-
1.6
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
20
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=15mH IAS=9A,VDD=90V,RG=25Ω,Starting TJ=25℃
3.ISD≤9A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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WFW9N90W
Fig.1 On State Characteristics
Fig.2 Transfer Current Characteristics
Fig.3 On-Resistance Variation
vs Drain current
Fig.4 Body Diode Forward voltage
Variation with Source Current
And Temperature
Fig.5 Capacitance Characteristics
Fig.6 Gate Charge Characteristics
3/7
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WFW9N90W
Fig.7 Breakdown Voltage Variation
Fig.8 On-Resistance Variation
vs.Temperature
Fig.9 Maximum Safe Operation Area
Fig.10 Maximum Drain Current
vs Case temperature
Fig.11 Transient thermal Response Curve
4/7
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WFW9N90W
Fig.12 Gate Test circuit & Waveform
Fig.13 Resistive Switching Test Circuit & Waveform
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
5/7
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WFW9N90W
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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WFW9N90W
TO247 Package Dimension
TO-247
Unit:mm
7/7
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