WFW9N90
Silicon N-Channel MOSFET
Features
■ 9A,900V,RDS(on)(Max1.35Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 58nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Winsemi’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide
performance, and
withstand
high
superior
energy
pulse
switching
in
the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
900
V
Continuous Drain Current(@Tc=25℃)
9
A
Continuous Drain Current(@Tc=100℃)
5.7
A
27
A
±30
V
Drain Source Voltage
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
663
mJ
EAR
Repetitive Avalanche Energy
(Note1)
15
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
PD
Total Power Dissipation(@Tc=25℃)
150
W
TJ,Tstg
Junction and Storage Temperature
-55~150
℃
300
℃
TL
Channel Temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.83
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
50
℃/W
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WFW9N90
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±10
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
IDSS
VDS=720V,VGS=0V
-
-
100
µA
V(BR)DSS
ID=10 mA,VGS=0V
900
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=1mA
3
-
5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=4A
-
1.1
1.35
Ω
Forward Transconductance
gfs
VDS=15V,ID=4A
3.0
7.0
-
S
Input capacitance
Ciss
VDS=25V,
-
2040
-
Reverse transfer capacitance
Crss
VGS=0V,
-
45
-
Output capacitance
Coss
f=1MHz
-
190
-
VDD=400V,
-
25
-
ID=4A
-
60
-
RG=100Ω
-
20
-
-
95
-
-
58
-
-
32
-
-
26
-
Gate-source breakdown voltage
Drain cut -off current
Drain -source breakdown voltage
Rise time
tr
Turn-on time
ton
Switching time
pF
ns
Fall time
tf
Turn-off time
(Note4,5)
toff
Total gate charge(gate-source
VDD=400V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=9A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
9
A
Pulse drain reverse current
IDRP
-
-
-
27
A
Forward voltage(diode)
VDSF
IDR=9A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=9A,VGS=0V,
-
1.6
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
20
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=15mH IAS=9A,VDD=90V,RG=25Ω,Starting TJ=25℃
3.ISD≤9A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2 /7
Steady, keep you advance
WFW9N90
Fig.1 On State Characteristics
Fig.3 On-Resistance Variation vs
ain Curr
ent
Dr
Dra
Curre
ce Ch
ara
cte
Fig.5 Capacitan
Capacitanc
Cha
rac
terristics
g.2 Transfer Current Ch
ara
cteri
sti
cs
Fi
Fig
Cha
rac
ris
tic
g.4 Body Diode Forward Volt
age
Fi
Fig
lta
Variation with Source Current and
ature
Temper
mpera
arge Ch
aracte
Fig.6 Gate Ch
Cha
Cha
cterristics
3 /7
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WFW9N90
ak
do
wn Volt
age Vari
ati
on
Fig.7 Bre
Break
akdo
dow
lta
ria
tio
g.9 Max
imum Safe Op
eration Area
Fi
Fig
aximum
Ope
stance Variation
Fig.8 On-Resi
On-Resis
vs.Temperature
ain Curr
ent vs
Fig.10 Maximum Dr
Dra
Curre
eratu
re
Case Temp
mpe
ature
11 Transient Th
ermal Re
spo
nse Cur
ve
Fig.
Fig.1
The
Res
pon
Curv
4 /7
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WFW9N90
orm
Fig.12Gate Test Circuit & Wavef
eform
13 Res
ve Switching Test Cir
cuit & Waveform
Fig.
g.1
esiisti
tiv
Circ
14
Un
clamped In
ducti
ve Switchi
ng Test Cir
cuit & Waveform
Fig.
g.14
14Un
Unc
Ind
tiv
hin
Circ
5 /7
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WFW9N90
de Re
cover
y dv/dt Test Circuit & Wavef
orm
Fig.15 Peak Dio
Diod
Rec
ery
eform
6 /7
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WFW9N90
TO-3PN Package Dimension
Unit:mm
7 /7
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