WTPA16A60CW Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=16A ■ Low on-state voltage: VTM=1.55V(Max.)@ IT=22.5A ■ High Commutation dV/dt. General Description Tab General purpose swithhing and phase control applications. These devices are intended to be interfaced directly to micro-controllers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. The -W series are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the WTPA series provides voltage insulated tab (rated at 2500V RMS). complying with UL standards (file ref.:E347423) Absolute Maximum Ratings TO220ISO (TJ=25℃ unless otherwise specified) Symbol Parameter VDRM/VPRM Peak Repetitive Forward Blocking Voltage(gate open) IT(RMS) Forward Current RMS (All Conduction Angles, TJ=58℃) ITSM Peak Forward Surge Current, I2t Circuit Fusing Considerations (tp= 10 ms) PGM PG(AV) (full Cycle, Sine Wave, 50/60 Hz) Units 600 V 16 A 160/168 A 144 A 2s Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us) 5 W Average Gate Power — Forward, (Over any 20ms period) 1 W 50 A/μs IFGM Critical rate of rise of on-state current TJ=125℃ ITM = 20A; IG = 200mA; dIG/dt = 200mA/µs Peak Gate Current — Forward, TJ = 125°C (20 µs, 120 PPS) VRGM Peak Gate Voltage — Reverse, TJ= 125°C (20 µs, 120 PPS) TJ, Tstg dI/dt Value (Note 1) 4 A 10 V Junction Temperature -40~125 ℃ Storage Temperature -40~150 ℃ Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may swiTJh to the on-state. The rate of rise of current should not exceed 15A/us. Thermal Characteristics Symbol Parameter Min Value Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 1.6 ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 60 ℃/W Rev. A Sep.2010 Copyright @ WinSemi Microelectronics Co., Ltd., All rights reserved. T03-3 WTPA16A60CW Electrical Characteristics (TJ = 25°C unless otherwise specified) Typ Characteristics Symbol Min Max Unit . IDRM//IRRM VTM Peak Forward or Reverse Blocking Current TJ=25℃ - - 5 μA (VDRM=VRRM,) TJ=125℃ - - 1 mA - - 1.55 V T2+G+ - - 35 T2+G- - - 35 T2-G- - - 35 T2+G+ - - 1.2 T2+G- - - 1.2 T2-G- - - 1.2 Forward “On” Voltage (Note2) (ITM = 22.5A tp=380μs) Gate Trigger Current (Continuous dc) IGT VGT (VD = 12 Vdc, RL = 33 Ω) Gate Trigger Voltage (Continuous dc) (VD =12 Vdc, RL = 33 Ω) mA V VGD Gate threshold voltage( VD= VDRM,RL = 3.3 KΩ,TJ=125℃,) 0.2 - - V dV/dt Critical rate of rise of commutation Voltage (VD=0.67VDRM) 40 - - V/μs - - 15 mA T2+G+ - - 25 T2+G- - - 30 T2-G- - - 25 - - 25 IH Holding Current (IT= 100 mA) Latching current IL Rd (VD =12 Vdc,IGT=0.1A) Dynamic resistance mA mΩ Note 2. Forward current applied for 1 ms maximum duration, duty cycle 2/5 Steady, keep you advance WTPA16A60CW 1 Fig. Fig.1 3 Fig. Fig.3 5 Fig. Fig.5 2 Fig. Fig.2 4 Fig. Fig.4 6 Fig. Fig.6 3/5 Steady, keep you advance WTPA16A60CW 7 Fig. Fig.7 8 Fig. Fig.8 9 Fig. Fig.9 10 Gate Trigger Characteristics Test Circuit Fig. Fig.10 4/5 Steady, keep you advance WTPA16A60CW TO-220ISO Package Dimension Unit: mm 5/5 Steady, keep you advance