WTPB8A60CW ect ode Thyri st or Bi-Dir ire ctiional Tri Trio rist sto Fea eattures ■ Repetitive Peak off-State Voltage:600V ■R.M.S On-State Current(IT(RMS)=8A ■ Low on-state voltage: VTM=1.55V(Max.)@ IT=11A ■ High Commutation dV/dt. ri pti on General Desc escri rip tio General purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. um Ratin gs (TJ=25℃ unless otherwise specified) Absolute Maxim imu ing Symbol Parame ametter VDRM Peak Repetitive Forward Blocking Voltage(gate open) IT(RMS) Forward Current RMS (All Conduction Angles, Tc=58℃) Peak Forward Surge Current, ITSM I2t PGM (Note 1) (1/2 Cycle, Sine Wave, 50/60 Hz) Value Units 600 V 8 A 80/84 A Circuit Fusing Considerations (t p= 10 ms) 36 A2s Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us) 5 W Average Gate Power — Forward, (Over any 20ms period) 1 W IFGM Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS) 2 A VRGM Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS) 10 V PG(AV) TJ, Junction Temperature -40~125 ℃ Tstg Storage Temperature -40~150 ℃ e1 Not Note1 e1:: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may switch to the on-state. The rate of rise of current should not exceed 3A/us. al Ch arac stics Therm rmal Cha actteri ris Symbol Parame ametter Value Min p Ty Typ x Ma Max Units RQJC Thermal Resistance, Junction-to-Case - - 1.6 ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 60 ℃/W Rev. B Nov.2008 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WTPB8A60CW tr arac sti cs (Tc = 25°C unless otherwise specified) Elec ectr triical Ch Cha actteri ris tics Characteristics Symbol IDRM//IRRM Min Typ. Max Unit Peak Forward or Reverse Blocking Current Tc=25℃ - - 5 μA (V DRM=V RRM,) Tc=125℃ - - 1 mA - - 1.55 V T2+G+ - - 35 T2+G- - - 35 T2-G- - - 35 T2+G+ - - 1.2 T2+G- - - 1.2 T2-G- - - 1.2 Gate threshold voltage(Tj=125℃, VD= VDRM) 0.2 - - V Critical rate of rise of commutation Voltage (VD=0.67VDRM) 400 - - V/μs Critical rate of rise On-State voltage(VD=400V,Tj=125℃) 4.5 - - A/μs Forward “On” Voltage(Note2) VTM (ITM = 11A Peak @ TA = 25°C) Gate Trigger Current (Continuous dc) IGT VGT VGD dV/dt dIcom/dt (VD = 6 Vdc, RL = 10 Ohms) Gate Trigger Voltage (Continuous dc) (VD =6 Vdc, RL = 10 Ohms) mA V IH Holding Current (IT= 100 mA) - 4 10 mA IL IG=1.2IGT - - 60 mA Rd Dynamic resistance - - 50 mΩ Note 2. Forward current applied for 1 ms maximum duration, duty cycle 2/5 Steady, keep you advance WTPB8A60CW Fig Fig..1 Fig Fig..3 Fig Fig..5 Fig Fig..2 Fig Fig..4 Fig Fig..6 3/5 Steady, keep you advance WTPB8A60CW Fig.7 Fig.8 Fig Fig..9 gger Ch aracteristics Test Cir cuit Fig.10 Gate Tri rig Cha irc 4/5 Steady, keep you advance WTPB8A60CW 20 Pack age Dim ension TO-2 -22 cka Dime Unit: mm 5/5 Steady, keep you advance