ZX5T949Z MPPS™ 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. SOT89 FEATURES • 5.5 Amps continuous current • Up to 20 Amps peak current • Very low saturation voltages • Exceptional gain linearity down to 10mA • Excellent high current gain hold up APPLICATIONS • DC - DC converters • MOSFET gate drivers • Charging circuits • Power switches • Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL 7" 12mm embossed 1000 units ZX5T949ZTA DEVICE MARKING TOP VIEW • 949 ISSUE 3 - DECEMBER 2004 1 SEMICONDUCTORS ZX5T949Z ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO -50 V Collector-emitter voltage BV CEO -30 V BV EBO -7 V Emitter-base voltage (a) IC -5.5 A Peak pulse current I CM -20 A Power dissipation at T A =25°C (a) PD 1.5 W 12 mW/°C Continuous collector current Linear derating factor Power dissipation at T A =25°C (b) PD Linear derating factor 2.1 W 16.8 mW/°C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R ⍜JA 83 °C/W (b) R ⍜JA 60 °C/W Junction to Ambient NOTES (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 3 - DECEMBER 2004 SEMICONDUCTORS 2 ZX5T949Z CHARACTERISTICS ISSUE 3 - DECEMBER 2004 3 SEMICONDUCTORS ZX5T949Z ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage MAX. UNIT CONDITIONS BV CBO -50 -70 V I C = -100A Collector-emitter breakdown voltage BV CER -50 -70 V I C = -1A, RB <1k⍀ Collector-emitter breakdown voltage BV CEO -30 -40 V I C = -10mA * Emitter-base breakdown voltage BV EBO -7.0 -8.0 V I E = -100A Collector cut-off current I CBO -20 nA V CB = -40V -0.5 A V CB = -40V,T amb =100°C -20 nA V CB = -40V -0.5 A V CB = -40V,T amb =100°C Collector cut-off current <-1 <-1 I CER R <1k⍀ Emitter cut-off current I EBO <-1 -10 nA V EB = -6V Collector-emitter saturation voltage V CE(SAT) -25 -40 mV -35 -55 mV I C = -0.5A, I B = -20mA * I C = -1A, I B = -100mA * -55 -80 mV I C = -1A, I B = -20mA * -55 -80 mV I C = -2A, I B = -200mA * -130 -175 mV I C = -5.5A, I B =-500mA * -970 -1070 mV I C = -5.5A, IB = -500mA * -960 mV I C = -5.5A, V CE = -1V * Base-emitter saturation voltage V BE(SAT) Base-emitter turn-on voltage V BE(ON) Static forward current transfer ratio h FE -860 100 225 100 200 70 145 10 20 I C = -10mA, V CE = -1V * I C = -1A, V CE = -1V * 300 I C = -5A, V CE = -1V * I C = -20A, V CE = -1V * Transition frequency fT 110 MHz I C = -100mA, V CE = -10V f = 50MHz Output capacitance C OBO 83 pF V CB = -10V, f = 1MHz * t ON 43 ns t OFF 230 Switching times I C = -1A, V CC = -10V, I B1 = -I B2 = -100mA NOTES * Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. ISSUE 3 - DECEMBER 2004 SEMICONDUCTORS 4 ZX5T949Z TYPICAL CHARACTERISTICS ISSUE 3 - DECEMBER 2004 5 SEMICONDUCTORS ZX5T949Z PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059 b 0.38 0.48 0.015 0.019 E 3.75 4.25 0.150 0.167 b1 - 0.53 - 0.021 E1 - 2.60 - 0.102 b2 1.50 c 0.28 1.80 0.060 0.071 G 2.90 3.00 0.114 0.118 0.44 0.011 0.017 H 2.60 2.85 0.102 0.112 D 4.40 4.60 0.173 0.181 - - - - - © Zetex Semiconductors plc 2004 Europe Americas Asia Pacific Corporate Headquaters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 8NP United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 3 - DECEMBER 2004 SEMICONDUCTORS 6