ZETEX ZXTP2006E6TC

ZXTP2006E6
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6
SUMMARY
BVCEO = -20V : RSAT = 31m ; IC = -3.5A
DESCRIPTION
Packaged in the SOT23-6 outline this new low
saturation 20V PNP transistor offers extremely low on
state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
SOT23-6
• 3.5 Amps continuous current
• Extremely low saturation voltage (-70mV max @ 1A/100mA )
• Up to 10 Amps peak current
• Very low saturation voltages
APPLICATIONS
• DC - DC converters
• Battery charging
• Power switches
• Motor control
• Power management functions
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER REEL
ZXTP2006E6TA
7”
8mm embossed
3,000
ZXTP2006E6TC
13”
8mm embossed
10,000
DEVICE MARKING
52
TOP VIEW
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ZXTP2006E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV CBO
-25
V
Collector-emitter voltage
BV CEO
-20
V
Emitter-base voltage
BV EBO
-7.5
V
Continuous collector current
IC
-3.5
A
Peak pulse current
I CM
-10
A
Power dissipation at T A =25°C (a)
Linear derating factor
PD
1.1
W
8.8
mW/°C
Power dissipation at T A =25°C (b)
Linear derating factor
PD
1.7
W
13.6
mW/°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)
R ⍜JA
113
°C/W
Junction to ambient (b)
R ⍜JC
73
°C/W
Junction to ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) As above measured at t<5 seconds.
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CHARACTERISTICS
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BV CBO
-25
-49
V
I C = -100␮A
BV CEO
-20
-43
V
I C = -10mA *
Emitter-base breakdown voltage
BV EBO
-7.5
-8.4
V
I E = -100␮A
Collector cut-off current
I CBO
-100
nA
V CB = -20V
Collector cut-off current
I CES
-100
nA
V CB = -20V
Emitter cut-off current
I EBO
-100
nA
V EB = -6V
Collector-emitter saturation voltage
V CE(SAT)
-15
mV
I C = -0.1A, I B = -10mA*
-10
MAX. UNIT CONDITIONS
mV
I C = -1A, I B = -10mA*
IC = -3.5A, IB = -350mA*
Base-emitter saturation voltage
V BE(SAT)
-0.96
-1.1
V
IC = -3.5A, IB = -350mA*
Base-emitter turn-on voltage
V BE(ON)
-0.8
-0.9
V
I C = -3.5A, V CE = -2V *
Static forward current transfer ratio
h FE
Transition frequency
-100
-140
mV
-110
-130
300
575
300
450
150
285
I C = -3.5A, V CE = -2V *
10
40
I C = -10A, V CE = -2V *
110
I C = -50mA, V CE = -10V
fT
I C = -10mA, V CE = -2V *
I C = -1A, V CE = -2V *
900
f = 50MHz
Output capacitance
45
C OBO
pF
V CB = -10V, f = 1MHz *
NOTES
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
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TYPICAL CHARACTERISTICS
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NOTES:
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NOTES:
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PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
0.90
1.45
0.035
0.057
E
2.20
3.20
0.0866
0.118
A1
0.00
0.15
0.00
0.006
E1
1.30
1.80
0.0511
0.071
A2
0.90
1.30
0.035
0.051
L
0.10
0.60
0.004
0.024
b
0.20
0.50
0.008
0.020
e
0.95 REF
0.037 REF
C
0.09
0.26
0.003
0.010
e1
1.90 REF
0.075 REF
D
2.70
3.10
0.106
0.122
⍜
0°
30°
0°
30°
© Zetex Semiconductors plc 2005
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