Zowie Technology Corporation General Purpose Transistor NPN Silicon Halogen-free type Lead free product COLLECTOR 3 3 MMBT2222AGH BASE 1 1 2 2 SOT-23 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 600 mAdc Symbol Max. Unit PD 225 1.8 mW mW / oC R JA 556 PD 300 2.4 R JA TJ,TSTG 417 -55 to +150 Rating Collector Current-Continuous THERMAL CHARACTERISTICS Characteristic o Total Device Dissipation FR-5 Board(1) TA=25 C o Derate above 25 C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C (2) o TA=25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature o C/W mW mW / oC o C/W o C o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Symbol Min. Max. Unit Collector-Emitter Breakdowe Voltage ( IC=10mAdc, IB=0 ) V(BR)CEO 40 - Vdc Collector-Emitter Breakdowe Voltage ( IC=10uAdc, IE=0 ) V(BR)CBO 75 - Vdc Emitter - Base Breakdowe Voltage ( IE=10 uAdc, IC=0 ) V(BR)EBO 6.0 - Vdc Collector Cutoff Current ( VCE=60 Vdc, VEB (off)=3.0 Vdc ) ICEX - 10 nAdc Collector Cutoff Current ( VCB=60 Vdc, IE=0 ) o ( VCB=60 Vdc, IE=0, TA=125 C ) ICBO - 0.01 10 uAdc Emitter Cutoff Current ( VEB=3.0 Vdc, IC=0 ) IEBO - 100 nAdc IBL - 20 nAdc Characteristic OFF CHARACTERISTICS Base Cutoff Current ( VCE=60 V, VEB (off)=3.0 Vdc ) (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. REV. 0 Zowie Technology Corporation Zowie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Symbol Min. Max. Unit HFE 35 50 75 35 100 50 40 300 - - VCE(sat) - 0.3 1.0 Vdc VBE(sat) 0.6 - 1.2 2.0 Vdc fT 300 - MHZ Output Capacitance ( VCB=10 Vdc, IE=0, f=1.0 MHZ ) Cobo - 8.0 pF Input Capacitance ( VEB=0.5 Vdc, IC=0, f=1.0 MHZ ) Cibo - 25 pF Input Impedance ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) ( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ ) hie 2.0 0.25 8.0 1.25 k ohms Voltage Feedback Ratio ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) ( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ ) hre - 8.0 4.0 X 10 Small-Signal Current Gain ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) ( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ ) hfe 50 75 300 375 - Output Admittance ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) ( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ ) hoe 5.0 25 35 200 u mhos rb, Cc - 150 ps NF - 4.0 dB ( VCC=30 Vdc, VBE (off) = -0.5 Vdc, IC =150 mAdc, IB1 = 15 mAdc ) td - 10 tr - 25 ( VCC=30 Vdc, IC = 150 mAdc, IB1 =IB2 = 15 mAdc ) ts - 225 tf - 60 Characteristic ON CHARACTERISTICS(3) DC Current Gain ( IC=0.1 mAdc, VCE=10 Vdc ) ( IC=1.0 mAdc, VCE=10 Vdc ) ( IC=10 mAdc, VCE=10 Vdc ) o ( IC=10 mAdc, VCE=10 Vdc, TA=-55 C ) (3) ( IC=150 mAdc, VCE=10 Vdc ) (3) ( IC=150 mAdc, VCE=1.0 Vdc ) (3) ( IC=500 mAdc, VCE=10 Vdc ) Collector-Emitter Saturation Voltage ( IC=150 mAdc, IB=15 mAdc ) ( IC=500 mAdc, IB=50 mAdc ) (3) (3) Base-Emitter Saturation Voltage ( IC=150 mAdc, IB=15 mAdc ) ( IC=500 mAdc, IB=50 mAdc ) SMALL-SIGNAL CHARACTERISTIC (4) Current-Gain-Bandwidth Product ( IC=20 mAdc, VCE=20 Vdc, f=100 MHZ ) Collector Base Time Constant ( VCB=10 Vdc, IC=100 uAdc, RS = 1.0 k ohms, f=1.0 kHZ ) Noise Figure ( VCE=10 Vdc, IC=100 uAdc, RS=1.0 k ohm, f=1.0 kHZ ) -4 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time nS nS (3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%. (2) fT is defined as the frequency at which hfe extrapolates to unity. REV. 0 Zowie Technology Corporation Zowie Technology Corporation MMBT2222AGH SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V 1.0 to 100 us, DUTY CYCLE = 2% +16 V +30 V 1.0 to 100 us, DUTY CYCLE = 2% 200 +16 V 200 1.0 k 1.0 k 0 -2.0 V 0 CS* < 10 pF* CS* < 10 pF* -14 V < 20 ns < 2.0 ns 1N914 -4.0V Scope rise time < 4.0 ns * Total shunt capacitance of test jig and connectors Figure 1. Turn-On Time Figure 2. Turn-Off Time 1000 hFE, DC CURRENT GAIN 700 500 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 5.0 10 300 500 700 1.0 k IC, COLLECTOR CURRENT ( mA ) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 20 30 50 IB, BASE CURRENT ( mA ) Figure 4. Collector Saturation Region REV. 0 Zowie Technology Corporation Zowie Technology Corporation MMBT2222AGH 500 200 IC/B = 10 o TJ= 25 C 100 200 70 50 100 tr @ VCC=30V td @ VEB(off)=2.0V td @ VEB(off)=0 30 20 t, TIME ( nS ) t, TIME ( nS ) VCC=30 V IC/IB=10 IB1=IB1 o TJ= 25 C 300 10 7.0 70 50 30 20 5.0 10 3.0 2.0 5.0 7.0 7.0 5.0 10 20 30 50 70 100 200 300 500 5.0 50 70 100 200 300 IC, COLLECTOR CURRENT ( mA ) Figure 6. Turn - Off Time 500 10 f=1.0kHz RS =OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE ( dB ) 6.0 4.0 2.0 8.0 IC =50uA 6.0 100uA 4.0 500uA 1.0mA 2.0 0 0.01 0.02 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 7. Frequency Effects Figure 8. Source Resistance Effects 20 Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.2 0.3 100 RS, SOURCE RESISTANCE (OHMS) 30 0.1 50 f, FREQUENCY ( kHZ ) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE ( VOLTS ) Figure 9. Capacitances 20 30 50 tT, CURRENT-GAIN-BANDWIDTH PRODUCT(MHZ) NF, NOISE FIGURE ( dB ) 30 Figure 5. Turn - On Time IC =1.0mA, RS=150 500uA, RS=200 100uA, RS=2.0k 50uA, RS=4.0k 8.0 CAPACITANCE ( pF ) 20 IC, COLLECTOR CURRENT ( mA ) 10 REV. 0 7.0 10 500 VCE = 10 V o TA= 25 C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT ( mA ) Figure 10. Current-Gain Bandwidth Product Zowie Technology Corporation Zowie Technology Corporation 1.0 MMBT2222AGH +0.5 o TJ= 25 C 0 1.0 V o VBE(sat) @ IC/IB=10 COEFFICIENT ( mV / C ) V, VOLTAGE ( VOLTS ) 0.8 0.6 VBE(on) @ VCE=10V 0.4 0.2 R VC for VCE(sat) -0.5 -1.0 -1.5 R VB for VBE -2.0 VCE(sat) @ IC/IB=10 -2.5 0 0.1 0.2 REV. 0 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 11. " On " Voltage Figure 12. Temperature Coefficients 500 Zowie Technology Corporation