ACE ACE2341

ACE2341
Technology
P-Channel Enhancement Mode MOSFET
Description
The ACE2341 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
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-20V/-3.3A, RDS(ON)[email protected]=-4.5V
-20V/-2.8A, RDS(ON)= [email protected]=-2.5V
-20V/-2.3A, RDS(ON)= [email protected]=-1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
Application
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Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (TJ=150℃)
TA=25℃
TA=70℃
ID
-4.0
-2.8
A
Pulsed Drain Current
IDM
-12
A
Continuous Source Current (Diode Conduction)
IS
-1.0
A
Power Dissipation
TA=25℃
TA=70℃
PD
1.25
0.8
W
Operating Junction Temperature
TJ
-55/150 ℃
Storage Temperature Range
TSTG
-55/150 ℃
Thermal Resistance-Junction to Ambient
RθJA
140
℃/W
VER 1.2
1
ACE2341
Technology
P-Channel Enhancement Mode MOSFET
Packaging Type
SOT-23-3
3
Pin
1
2
3
1
Description
Gate
Source
Drain
2
Ordering information
Selection Guide
ACE2341 XX + H
Halogen - free
Pb - free
BM: SOT-23-3
VER 1.2
2
ACE2341
Technology
P-Channel Enhancement Mode MOSFET
Electrical Characteristics
(TA=25℃, Unless otherwise noted)
Parameter
Symbol
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(ON)
Drain-Source On-Resistance
RDS(ON)
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
Min.
Typ
Max.
VGS=0V, ID=-250uA
-20
VDS=VGS, ID=-250uA
-0.35
-0.9
VDS=0.V, VGS=±12V
±100
VDS=-20V, VGS=0V
-1
-10
VDS=-20V, VGS=0V TJ=55℃
VDS≦-5V, VGS=-4.5V
-6
VGS=-4.5V, ID=-3.3A
0.036 0.045
VGS=-2.5V, ID=-2.8A
0.045 0.055
VGS=-1.8V, ID=-2.3A
0.055 0.065
VDS=-5.0V, ID=-3.3A
3
IS=-1.6A, VGS=0V
-0.8
-1.2
VDS=-6V, VGS=-4.5V,
ID≣-3.3A
VDS=-6V, VGS=0V,
f=1MHz
VDD=-6V, RL=6Ω
ID≡-1.0A, VGEN=-4.5V
RG=6Ω
8
1.2
2.2
700
160
120
15
35
60
40
Unit
V
nA
uA
A
Ω
S
V
13
nC
pF
25
55
90
60
ns
VER 1.2
3
ACE2341
Technology
Typical
P-Channel Enhancement Mode MOSFET
Characteristics
Output Characteristics
VDS – Drain to Source Voltage (V)
On-Resistance vs. Drain Current
ID – Drain Current (A)
Transfer Characteristics
VGS – Gate to Source Voltage (V)
Capacitance
VDS – Drain to Source Voltage (V)
VER 1.2
4
ACE2341
Technology
Typical
P-Channel Enhancement Mode MOSFET
Characteristics
Gate Charge
Og Total Gate Charge (nC)
Normalized On-Resistance vs. Junction Temperature
TJ – Junction Temperature (℃)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD Source to Drain Voltage (V)
VGS – Gate to Source Voltage (V)
VER 1.2
5
ACE2341
Technology
Typical
P-Channel Enhancement Mode MOSFET
Characteristics
Threshold Voltage
Single Pulse Power
TJ – Temperature
Time(sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration(sec)
VER 1.2
6
ACE2341
Technology
P-Channel Enhancement Mode MOSFET
Packing Information
SOT-23-3
VER 1.2
7
ACE2341
Technology
P-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
8