APTC60DAM18CTG Boost chopper SiC FWD diode Super Junction MOSFET Power Module NTC2 VBUS VBUS SENSE VDSS = 600V RDSon = 18mΩ max @ Tj = 25°C ID = 143A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • - OUT Q2 G2 • FWD SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration S2 0/VBU S NTC1 • • G2 S2 VBUS VBUS SENSE 0/VBUS OUT OUT S2 NTC2 G2 NTC1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 143 107 572 ±30 18 833 20 1 1800 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APTC60DAM18CTG – Rev 2 October, 2005 CR1 APTC60DAM18CTG All ratings @ Tj = 25°C unless otherwise specified Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy VGS = 0V,VDS = 600V Min VGS = 10V, ID = 71.5A VGS = VDS, ID = 4mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz 2.1 3 Min Typ 28 10.2 0.85 1036 VGS = 10V VBus = 300V ID = 143A Maximum Reverse Leakage Current Max Unit µA mΩ V nA nF nC 21 30 84 Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 143A, R G = 1.2Ω 2630 Test Conditions µJ 4824 Typ Max 2 10 IF DC Forward Current VF Diode Forward Voltage IF = 100A QC Total Capacitive Charge IF = 100A, VR = 300V di/dt =2400A/µs 140 C Total Capacitance f = 1MHz, VR = 200V 650 f = 1MHz, VR = 400V 500 APT website – http://www.advancedpower.com µJ 3920 Min 600 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C ns 283 1608 VR=600V Unit 444 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 143A, R G = 1.2Ω Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Max 100 1000 18 3.9 ±200 116 Chopper diode ratings and characteristics IRM Typ Tj = 25°C Tj = 125°C Inductive switching @ 125°C VGS = 15V VBus = 400V ID = 143A R G = 1.2Ω Rise Time Tf VGS = 0V,VDS = 600V 100 1.6 2.0 Unit V mA A 1.8 2.4 V nC pF 2–7 APTC60DAM18CTG – Rev 2 October, 2005 Electrical Characteristics APTC60DAM18CTG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To heatsink M5 Max 0.15 0.28 2500 -40 -40 -40 1.5 RT = Min R 25 °C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Unit Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT website – http://www.advancedpower.com 3–7 APTC60DAM18CTG – Rev 2 October, 2005 SP4 Package outline (dimensions in mm) APTC60DAM18CTG Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.16 0.14 0.9 0.12 0.7 0.1 0.5 0.08 0.06 0.3 0.04 0.1 0.02 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 540 VGS=15&10V 600 6.5V 6V 500 400 5.5V 300 5V 200 4.5V 100 0 360 270 180 TJ=125°C 90 TJ=25°C T J=-55°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 1.05 V GS=10V V GS=20V 1 7 DC Drain Current vs Case Temperature 160 RDS(on) vs Drain Current 1.1 Normalized to VGS =10V @ 71.5A 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 0.95 0.9 140 120 100 80 60 40 20 0 0 40 80 120 160 I D, Drain Current (A) 200 240 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4–7 APTC60DAM18CTG – Rev 2 October, 2005 RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 450 4V I D, DC Drain Current (A) ID, Drain Current (A) 700 I D, Drain Current (A) 800 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 limited by RDSon 100µs 100 1 ms DC line 10 10 ms Single pulse TJ =150°C 0.6 1 -50 -25 0 25 50 75 100 125 150 1 Ciss Coss 10000 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 100 1000 Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) V GS=10V ID= 143A 14 ID=143A TJ=25°C 12 10 VDS=120V V DS=300V 8 VDS=480V 6 4 2 0 0 200 APT website – http://www.advancedpower.com 400 600 800 Gate Charge (nC) 1000 1200 5–7 APTC60DAM18CTG – Rev 2 October, 2005 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60DAM18CTG APTC60DAM18CTG Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=1.2Ω TJ=125°C L=100µH 200 150 VDS=400V RG=1.2Ω T J=125°C L=100µH 100 80 tr and t f (ns) 100 60 40 tr 50 20 td(on) 0 0 40 80 120 160 200 0 240 0 40 ID, Drain Current (A) 120 160 200 240 Switching Energy vs Gate Resistance 20 VDS=400V RG=1.2Ω TJ=125°C L=100µH E off Switching Energy (mJ) Switching Energy (mJ) 10 9 8 7 6 5 4 3 2 1 0 80 ID, Drain Current (A) Switching Energy vs Current Eon V DS =400V ID=143A T J=125°C L=100µH 15 Eoff 10 E on 5 0 0 40 80 120 160 200 ID, Drain Current (A) 240 Operating Frequency vs Drain Current 140 120 ZCS 100 ZVS 80 VDS=400V D=50% RG=1.2Ω T J=125°C T C=75°C 60 40 20 Hard switching 0 30 50 70 90 110 ID, Drain Current (A) 0 130 2.5 5 7.5 10 Gate Resistance (Ohms) 12.5 Source to Drain Diode Forward Voltage 1000 I DR, Reverse Drain Current (A) 160 Frequency (kHz) tf T J=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) APT website – http://www.advancedpower.com 6–7 APTC60DAM18CTG – Rev 2 October, 2005 td(on) and td(off) (ns) Rise and Fall times vs Current 120 APTC60DAM18CTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 2000 TJ=25°C 150 TJ =75°C IR Reverse Current (µA) I F Forward Current (A) Reverse Characteristics Forward Characteristics 200 TJ=175°C 100 TJ =125°C 50 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) TJ =175°C 1500 TJ =125°C 1000 TJ =75°C 500 0 200 TJ=25°C 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage C, Capacitance (pF) 4000 3000 2000 1000 1 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 7–7 APTC60DAM18CTG – Rev 2 October, 2005 0