APTGF150DH120 Asymmetrical - Bridge NPT IGBT Power Module VCES = 1200V IC = 150A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration OUT1 VBUS Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile 0/VBUS E1 E4 G4 OUT2 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area Tc = 25°C Max ratings 1200 200 150 400 ±20 1040 Tj = 150°C 300A @ 1200V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGF150DH120 – Rev 1 March, 2004 G1 APTGF150DH120 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic IF(AV) Test Conditions VGE = 0V, IC = 2mA Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T j = 25°C VGE =15V IC = 150A Tj = 125°C VGE = VCE, IC = 5 mA VGE = ±20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 150A RG = 5Ω Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 200A IF = 400A IF = 200A trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 200A VR = 800V di/dt =400A/µs IF = 200A VR = 800V di/dt =400A/µs Min Tc = 70°C Max 0.2 12 3.3 4 3 4.5 Min Test Conditions Typ 1200 mA V 6.5 ±500 V nA Typ 10.5 1.5 0.8 70 50 500 30 8.5 9 Max Unit Typ Max Tj = 125°C 200 2.0 2.3 1.8 Tj = 25°C 420 Tj = 125°C 580 Tj = 25°C 2.5 Tj = 125°C 10.7 APT website – http://www.advancedpower.com 3.9 Unit V nF ns mJ Unit A 2.5 V ns µC 2-5 APTGF150DH120 – Rev 1 March, 2004 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics APTGF150DH120 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink Mounting torque For terminals Package Weight Min IGBT Diode Typ Max 0.12 0.32 2500 M6 M5 -40 -40 -40 3 2 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGF150DH120 – Rev 1 March, 2004 Package outline APTGF150DH120 Typical Performance Curve Output characteristics (VGE=15V) Output characteristics (VGE=10V) 175 250µs Pulse Test < 0.5% Duty cycle 200 175 TJ=25°C Ic, Collector current (A) 150 125 100 75 50 TJ=125°C 25 0 1 2 3 VCE, Collector to Emitter Voltage (V) 50 TJ=125°C 25 0 1 2 3 VCE, Collector to Emitter Voltage (V) VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 75 250µs Pulse Test < 0.5% Duty cycle 250 200 150 100 50 4 6 8 10 VGE, Gate to Emitter Voltage (V) 12 VCE=800V 8 4 0 0 250 500 750 1000 Gate Charge (nC) 1250 Capacitance vs Collector to Emitter Voltage C, Capacitance (nF) tdon tf tr VCE=600V 100 tdoff 100 IC = 150A TJ = 25°C 16 12 Switching times vs collector current VCE = 600V VGE=±15V RG=5 TJ = 125°C 4 Gate Charge 20 0 time (ns) 100 4 Transfer Characteristics 300 Cies 10 Coes 1 Cres 0.1 10 0 50 100 150 Ic, Collector current (A) 0 200 40 Eon 30 Eoff 20 10 15 20 25 30 DC Collector Current vs Case Temperature 200 Ic, DC Collector Current (A) VCE = 600V VGE=±15V IC=150A TJ = 125°C 50 5 VCE, Collector to Emitter Voltage (V) Switching energy losses vs Gate resistance 60 Switching Energy losses (mJ) TJ=25°C 125 0 0 1000 250µs Pulse Test < 0.5% Duty cycle 150 10 175 150 125 100 75 50 25 0 0 0 4 8 12 16 20 24 Gate resistance (Ohms) 28 32 0 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4-5 APTGF150DH120 – Rev 1 March, 2004 Ic, Collector current (A) 225 APTGF150DH120 Minimum Switching Safe Operating 300 VCE = 600V, VGE=±15V IC=150A, TJ = 125°C 250 tdoff 1000 200 150 100 tdon tr 100 tf 50 0 10 0 300 600 900 1200 1500 VCE, Collector to Emitter Voltage (V) 0.12 0.1 0.08 0.06 0.04 0.02 0 10 20 30 Gate resistance (Ohms) 40 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 Thermal Impedance (°C/W) Switching times vs gate resistor 10000 time (ns) IC, Collector current (A) 350 Area 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 VCE = 800V D = 50% RG = 5 TJ = 125°C 80 60 40 20 0 0 50 100 150 IC, Collector Current (A) 200 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGF150DH120 – Rev 1 March, 2004 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100