ADPOW APTGF50DDA60T3G

APTGF50DDA60T3G
Dual Boost chopper
NPT IGBT Power Module
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
13 14
CR2
CR1
23
8
Q1
Q2
26
4
27
3
29
30
31
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a
single boost of twice the current capability
• RoHS compliant
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
600
65
50
230
±20
250
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
November, 2005
7
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTGF50DDA60T3G – Rev 1
22
VCES = 600V
IC = 50A @ Tc = 80°C
APTGF50DDA60T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Tf
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Chopper diode ratings and characteristics
Symbol Characteristic
VRRM
IRM
IF
VF
Tj = 25°C
Tj = 125°C
T
VGE =15V
j = 25°C
IC = 50A
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
VGE = 0V
VCE = 600V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Min
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE = 15V
VBus = 300V
IC = 50A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
R G = 2.7Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 50A
R G = 2.7Ω
Test Conditions
VR=600V
Reverse Recovery Time
Qrr
Reverse Recovery Charge
1
1
2.0
2.2
500
µA
mA
Typ
2200
323
200
166
20
100
40
9
120
2.45
6
400
V
nA
Max
Unit
pF
nC
ns
42
10
130
21
0.5
1
Typ
ns
mJ
Max
IF = 60A
VR = 400V
di/dt =200A/µs
250
500
60
1.6
1.9
Tj = 125°C
1.4
Tj = 25°C
130
Tj = 125°C
Tj = 25°C
170
220
Tj = 125°C
920
APT website – http://www.advancedpower.com
Unit
V
Tj = 25°C
Tj = 125°C
IF = 60A
IF = 120A
V
12
Min
Tc = 70°C
IF = 60A
trr
Unit
600
DC Forward Current
Diode Forward Voltage
Max
4
Min
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
1.7
Typ
µA
A
1.8
V
November, 2005
Test Conditions
ns
nC
2-6
APTGF50DDA60T3G – Rev 1
Symbol Characteristic
APTGF50DDA60T3G
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.5
0.9
Unit
T: Thermistor temperature
Thermal and package characteristics
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Symbol Characteristic
RthJC
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
1.5
°C/W
V
150
125
100
4.7
110
°C
N.m
g
12
APT website – http://www.advancedpower.com
3-6
APTGF50DDA60T3G – Rev 1
28
17
1
November, 2005
SP3 Package outline (dimensions in mm)
APTGF50DDA60T3G
Typical Performance Curve
Output characteristics (VGE =15V)
Output Characteristics (VGE=10V)
150
TJ=-55°C
250µs Pulse Test
< 0.5% Duty cycle
Ic, Collector Current (A)
TJ=25°C
100
TJ=125°C
50
0
250µs Pulse Test
< 0.5% Duty cycle
100
T J=25°C
50
TJ=125°C
0
0
1
2
3
4
0
VCE, Collector to Emitter Voltage (V)
1
2
3
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
250µs Pulse Test
< 0.5% Duty cycle
125
100
75
50
TJ=125°C
25
TJ=25°C
TJ=-55°C
0
1
2
3
4
5
6
7
8
9
VGE, Gate to Emitter Voltage (V)
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
7
6
Ic=100A
5
4
3
Ic=50A
2
1
Ic=25A
0
6
8
10
12
14
14
VCE =300V
12
VCE=480V
10
8
6
4
2
0
0
25
50
75
100 125 150 175 200
Gate Charge (nC)
On state Voltage vs Gate to Emitter Volt.
8
VCE =120V
IC = 50A
TJ = 25°C
16
10
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
0
4
Gate Charge
18
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
150
On state Voltage vs Junction Temperature
4
3.5
Ic=100A
3
2.5
Ic=50A
2
1.5
Ic=25A
1
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.5
0
16
-50
VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
1.10
1.00
0.90
0.80
0.70
-50
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
November, 2005
80
1.20
Ic, DC Collector Current (A)
Collector to Emitter Breakdown
Voltage (Normalized)
TJ=-55°C
70
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4-6
APTGF50DDA60T3G – Rev 1
Ic, Collector Current (A)
150
APTGF50DDA60T3G
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
VGE = 15V
50
40
Tj = 125°C
VCE = 400V
RG = 2.7Ω
30
20
0
25
50
75
100
125
200
175
150
VGE=15V,
TJ=125°C
125
100
75
50
150
0
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 400V
R G = 2.7Ω
tf, Fall Time (ns)
tr, Rise Time (ns)
VG E=15V,
TJ=125°C
125
150
40
TJ = 125°C
30
20
TJ = 25°C
0
0
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
0
150
Turn-On Energy Loss vs Collector Current
T J=125°C,
VGE=15V
VCE = 400V
RG = 2.7Ω
1.5
Eoff, Turn-off Energy Loss (mJ)
2
Eon, Turn-On Energy Loss (mJ)
100
10
10
1
0.5
0
0
25
50
75
100
125
2.5
25
50
75
100
125
ICE, Collector to Emitter Current (A)
150
Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
R G = 2.7Ω
2
TJ = 125°C
1.5
1
0.5
0
150
0
ICE, Collector to Emitter Current (A)
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
3
120
V CE = 400V
V GE = 15V
TJ= 125°C
Eon, 50A
2
1.5
Eoff, 50A
1
0.5
100
November, 2005
2.5
IC , Collector Current (A)
Switching Energy Losses (mJ)
75
VCE = 400V, VGE = 15V, R G = 2.7Ω
50
40
20
50
Current Fall Time vs Collector Current
60
30
25
ICE, Collector to Emitter Current (A)
60
50
VGE =15V,
TJ=25°C
VCE = 400V
RG = 2.7Ω
80
60
40
20
Eon, 50A
0
0
0
5
10
15
20
Gate Resistance (Ohms)
25
0
200
400
600
VCE, Collector to Emitter Voltage (V)
APT website – http://www.advancedpower.com
5-6
APTGF50DDA60T3G – Rev 1
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
60
APTGF50DDA60T3G
Capacitance vs Collector to Emitter Voltage
Fmax, Operating Frequency (kHz)
C, Capacitance (pF)
10000
Cies
1000
Coes
Cres
100
0
10
20
30
40
50
240
Operating Frequency vs Collector Current
VCE = 400V
D = 50%
R G = 2.7Ω
TJ = 125°C
TC= 75°C
200
160
120
80
hard
switching
40
ZCS
ZVS
0
0
VCE, Collector to Emitter Voltage (V)
20
40
60
80
100
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
0.05
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
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APTGF50DDA60T3G – Rev 1
November, 2005
0
0.00001