ADPOW APTGT75X120E3

APTGT75X120E3
3 Phase bridge
Trench IGBT® Power Module
VCES = 1200V
IC = 75A @ Tc = 80°C
Application
•
AC Motor control
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
•
19
17
•
•
•
15
Benefits
21
13
1 2
3 4
5 6
7 8
9 10
11 12
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Operating Area
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
TC = 25°C
Max ratings
1200
100
75
175
±20
350
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
July, 2003
14
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGT75X120E3 – Rev 0
20
APTGT75X120E3
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
All ratings @ Tj = 25°C unless otherwise specified
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eoff
Turn off Energy
Symbol Characteristic
Diode Forward Voltage
Er
Reverse Recovery Energy
Qrr
Reverse Recovery Charge
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
TJ
TSTG
TC
Torque
Wt
Typ
1.7
2.0
5.0
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7Ω
Test Conditions
IF = 75A
VGE = 0V
IF = 75A
VR = 600V
di/dt =825A/µs
IF = 75A
VR = 600V
di/dt =825A/µs
Typ
5340
280
240
260
30
420
Max
5
2.1
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
Package Weight
6.5
500
V
nA
Max
Unit
pF
ns
45
ns
520
90
Typ
1.6
1.6
Tj = 25°C
3
Tj = 125°C
6
Tj = 25°C
7.6
Tj = 125°C
13.7
Min
IGBT
Diode
Typ
mJ
Max
2.1
-40
-40
-40
3
Unit
V
mJ
µC
Max
0.35
0.58
2500
APT website – http://www.advancedpower.com
V
285
Min
M5
Unit
V
mA
70
Tj = 25°C
Tj = 125°C
Symbol Characteristic
VISOL
1.4
Min
Thermal and package characteristics
RthJC
Min
1200
9.5
Reverse diode ratings and characteristics
VF
Test Conditions
VGE = 0V, IC = 5mA
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 75A
Tj = 125°C
VGE = VCE , IC = 3 mA
VGE = 20V, VCE = 0V
Unit
°C/W
July, 2003
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
V
150
125
125
4.5
300
°C
N.m
g
2-3
APTGT75X120E3 – Rev 0
Electrical Characteristics
APTGT75X120E3
Package outline
PIN 1
July, 2003
PIN 21
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
3-3
APTGT75X120E3 – Rev 0
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :