ARF520 D APT G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 165 V 150 W 100 MHz The ARF520 is an RF power transistor designed for high voltage operation in narrow band ISM and MRI power amplifiers up to 100 MHz. • Specified 125 Volt, 81 MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class AB) • Efficiency = 50% • High Voltage Breakdown and Large SOA for Superior Ruggedness. • Industry standard package • Low Vth thermal coefficient MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter ARF520 UNIT Drain-Source Voltage 500 Volts Continuous Drain Current @ TC = 25°C 10 Amps VGS Gate-Source Voltage ±30 Volts PD Total Device Dissipation @ TC = 25°C 250 Watts TJ,TSTG TL -55 to 200 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 500 VDS(ON) On State Drain Voltage IDSS IGSS 1 TYP MAX 4 (I D(ON) = 5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C) 250 ±100 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) gfs Forward Transconductance (VDS = 25V, ID = 5A) 4 VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 6 UNIT Volts µA nA mhos 5 Volts MAX UNIT THERMAL CHARACTERISTICS MIN RθJC Junction to Case RθCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) TYP 0.7 0.1 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com °C/W 6-2003 Characteristic 050-5930 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol ARF520 Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 800 1200 Coss Output Capacitance VDS = 50V 140 200 Crss Reverse Transfer Capacitance f = 1 MHz 9 12 td(on) Turn-on Delay Time VGS = 15V 5.1 10 VDD = 0.5 VDSS 4.1 8 ID = ID[Cont.] @ 25°C 12.8 20 RG = 1.6 Ω 4.0 8 MAX tr Rise Time td(off) Turn-off Delay Time tf Fall Time FUNCTIONAL CHARACTERISTICS Symbol pF ns (Push-Pull Configuration) Characteristic GPS UNIT Common Source Amplifier Power Gain η Drain Efficiency ψ Electrical Ruggedness VSWR 5:1 Test Conditions MIN TYP f = 81MHz 13 14 dB 50 55 % Idq = 50mA VDD = 125V UNIT No Degradation in Output Power Pout = 150W 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. 24 3000 Class AB VDD = 125V 22 1000 CAPACITANCE (pf) 20 GAIN (dB) Ciss Pout = 150W 18 16 14 12 500 Coss 100 50 10 Crss 0 10 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 25 50 75 100 125 150 FREQUENCY (MHz) Figure 1, Typical Gain vs. Frequency 10 40 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C 8 6 4 2 0 0 TJ = +25°C TJ = +125°C 100us ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 050-5930 Rev A 6-2003 12 OPERATION HERE LIMITED BY RDS (ON) 10 1ms 5 10ms 1 TC =+25°C TJ =+200°C SINGLE PULSE .5 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area 100ms DC ARF520 25 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.0 0.8 0.6 0.4 0.2 20 VGS=15 & 10V 8V 15 6V 5.5V 10 5V 5 4.5V 4V 0.0 -50 0 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics D=0.5 0.2 0.10 0.05 0.1 0.05 Note: 0.02 0.01 PDM 0.01 SINGLE PULSE t1 0.005 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration 10 Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 80 100 Zin (Ω) ZOL (Ω) 24 - j 4.5 8.3 - j 11.6 2.5 - j 7.1 1.0 - j 4.2 .30 - j 1.1 .25 + j 0.3 .35 + j 1.6 55 - j 4 45 - j 22 28.7 - j 28 17.9 - j 26 9.0 - j 20.6 5.8 - j 17 4 - j 14.2 Idq = 50mA Zin - Gate shunted with 25Ω ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 125V 6-2003 0.001 10-5 050-5930 Rev A Z JC, THERMAL IMPEDANCE (°C/W) θ 0.70 ARF520 L4 C12 R1 C9 Bias 0 - 12V C13 C11 C10 L3 C8 RF Input +125V R2 C7 R3 C2 RF Output L2 L1 C6 TL1 DUT C1 C3 C5 C4 C1 - Arco 406 Mica trimmer C2 - 220pF Semco metal clad C3 - Arco 464 Mica trimmer C4 - 820 pF ATC 700B C5- 1000 pF ATC 700B C6 - Arco 463 Mica trimmer C7-C10 10nF 500V chip C11-C13 1nF NPO 500V TL1 - .23" x 1.5" stripline L1 -- 2t #18 .3" ID .2"L ~50nH L2 -- 3t #16 AWG .31" ID .3"L ~65nH L3 -- 10t #22 AWG .25 ID ~470nH L4 -- VK200-4B ferrite choke ~3uH R1-R3 -- 1k Ohm 1/4W Carbon DUT = ARF520 81.36 MHz Test Circuit Gate Bias Vdd Power ARF520 Test Fixture 4-17-02 rf HAZARDOUS MATERIAL WARNING .5" SOE Package Outine A U The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domestic waste. M 1 M Q 4 R 2 B PIN 1. 2. 3. 4. SOURCE GATE SOURCE DRAIN 3 D 050-5930 Rev A 6-2003 K J H DIM A B C D E H J K M Q R U INCHES MILLIMETERS MIN MAX MIN MAX 0.960 0.990 24.39 25.14 0.465 0.510 11.82 12.95 0.229 0.275 5.82 6.98 0.216 0.235 5.49 5.96 0.084 0.110 2.14 2.79 0.144 0.178 3.66 4.52 0.003 0.007 0.08 0.17 0.435 11.0 45˚ NOM 45˚ NOM 0.115 0.130 2.93 3.30 0.246 0.255 6.25 6.47 0.720 0.730 18.29 18.54 Controlling Dimension: INCH. C E Seating Plane APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.