TI DS125BR800ANJYT

DS125BR800A
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SNLS467 – NOVEMBER 2013
Low-Power 12.5-Gbps 8-Channel (Unidirectional) Repeater With Input Equalization
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FEATURES
DESCRIPTION
•
•
The DS125BR800A is an extremely low-power highperformance multi-protocol repeater/redriver designed
to support eight channels of PCIe, SAS, and other
high-speed interface serial protocols up to 12.5 Gbps.
The receiver's continuous time linear equalizer
(CTLE) provides a boost of up to +30 dB at 6.25 GHz
(12.5 Gbps) in each of its eight channels and is
capable of opening an input eye that is completely
closed due to inter symbol interference (ISI) induced
by interconnect medium such as 30in+ backplane
traces or 8m+ copper cables, hence enabling host
controllers to ensure an error free end-to-end link.
The strong linear equalization maximizes interconnect
channel extension when the DS125BR800A is placed
with the majority of channel loss on the devices input
side. Adjustable transmit de-emphasis and output
voltage amplitude help to compensate for the
remaining channel attenuation on the output side.
1
2
•
•
•
•
•
•
•
•
•
Proven System Interoperability
Comprehensive multi-protocol Repeater
Family
Low 65-mW/Channel (Typ) Power
Consumption, With Option to Power Down
Unused Channels
Transparent Management of Link Training
Protocol for PCIe and SAS
Advanced Signal Conditioning Features
– Rx CTLE up to 30 dB (24 dB for SAS3)
– Tx De-Emphasis up to -12 dB
– Tx Output Voltage Control: 700 - 1300 mV
Device Configuration Interface:
– Pin Selection, EEPROM, or SMBus Interface
Single Supply Voltage: 2.5 V or 3.3 V
−40°C to 85°C Operating Temperature Range
3-kV HBM ESD Rating
Flow-Thru Pinout: 54-Pin LLP (10 mm x 5.5
mm, 0.5 mm pitch)
Supported Protocols
– SAS/SATA
– PCIe
– Other Proprietary Interface up to 12.5 Gbps
When operating in SAS-3 and PCIe Gen-3 mode, the
DS125BR800A transparently allows the host
controller and the end point to optimize the full link
and negotiate transmit equalizer coefficients. This
seamless management of the link training protocol
ensures system level interoperability with minimum
latency. With a low power consumption of 65
mW/channel (typ) and option to turn-off unused
channels, the DS125BR800A enables energy efficient
system design. A single supply of 3.3 V or 2.5 V is
required to power the device.
The programmable settings can be applied easily via
pins, software (SMBus or I2C) or loaded via an
external EEPROM. When operating in the EEPROM
mode, the configuration information is automatically
loaded on power up, which eliminates the need for an
external microprocessor or software driver.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013 , Texas Instruments Incorporated
DS125BR800A
SNLS467 – NOVEMBER 2013
www.ti.com
Typical Application
8
TX
Connector
ASIC
or
PCIe EP
8
RX
DS125BR800A
8
RX
System Board
Root Complex
DS125BR800A
Connector
ard
Bo ce
Tra
8
TX
Block Diagram - Detail View Of Channel (1 Of 8)
VOD/DeEMPHASIS
CONTROL
VDD
Auto/Manual
RXDET
INx_n+
RATE
DET
DEMA/B
SMBus
EQ
OUTBUF
INx_n-
EQA/B
SMBus
2
OUTx_n+
OUTx_n-
IDLE
DET
TX Idle Enable
SMBus
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SNLS467 – NOVEMBER 2013
PWDN
VDD
DEMA1/SCL
DEMA0/SDA
ENSMB
EQB1/AD2
EQB0/AD3
51
50
49
48
47
46
DEMB0/AD1
53
52
DEMB1/AD0
54
Pin Diagram
SMBUS AND CONTROL
INB_0+
1
45
OUTB_0+
INB_0-
2
44
OUTB_0-
INB_1+
3
43
OUTB_1+
INB_1-
4
42
OUTB_1-
INB_2+
5
41
VDD
INB_2-
6
40
OUTB_2+
INB_3+
7
39
OUTB_2-
INB_3-
8
38
OUTB_3+
VDD
9
37
OUTB_3-
INA_0+
10
36
VDD
INA_0-
11
35
OUTA_0+
INA_1+
12
34
OUTA_0-
INA_1-
13
33
OUTA_1+
VDD
14
32
OUTA_1-
INA_2+
15
31
OUTA_2+
INA_2-
16
30
OUTA_2-
INA_3+
17
29
OUTA_3+
INA_3-
18
28
OUTA_3-
19
20
21
22
23
24
25
26
27
EQA1
EQA0
MODE
RXDET
RESERVED
VIN
VDD_SEL
SD_TH/READ_EN
ALL_DONE
DAP = GND
NOTE: Above 54-lead LLP graphic is a TOP VIEW, looking down through the package.
Figure 1. DS125BR800A Pin Diagram 54 lead
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Table 1. Pin Descriptions (1)
Pin Name
Pin Number
I/O, Type
Pin Description
Differential High Speed I/O's
INB_0+, INB_0-,INB_1+,
INB_1-,INB_2+, INB_2,INB_3+, INB_3-
1, 2, 3, 4,
5, 6, 7, 8,
I
Inverting and non-inverting CML differential inputs to the equalizer. Onchip 50Ω termination resistor connects INB_n+ to VDD and INB_n- to
VDD when enabled.
AC coupling required on high-speed I/O
INA_0+, INA_0-,INA_1+,
INA_1-,INA_2+, INA_2,INA_3+, INA_3-
10, 11, 12, 13,
15, 16, 17, 18
I
Inverting and non-inverting CML differential inputs to the equalizer. Onchip 50Ω termination resistor connects INA_n+ to VDD and INA_n- to
VDD when enabled.
AC coupling required on high-speed I/O
OUTB_0+,
OUTB_1+,
OUTB_2+,
OUTB_3+,
OUTB_0-,
OUTB_1-,
OUTB_2-,
OUTB_3-
45, 44, 43, 42,
40, 39, 38, 37
O
Inverting and non-inverting 50Ω driver outputs with de-emphasis.
Compatible with AC coupled CML inputs.
AC coupling required on high-speed I/O
OUTA_0+,
OUTA_1+,
OUTA_2+,
OUTA_3+,
OUTA_0-,
OUTA_1-,
OUTA_2-,
OUTA_3-
35, 34, 33, 32,
31, 30, 29, 28
O
Inverting and non-inverting 50Ω driver outputs with de-emphasis.
Compatible with AC coupled CML inputs.
AC coupling required on high-speed I/O
I, 4-LEVEL
System Management Bus (SMBus) enable pin
Tie 1kΩ to VDD = Register Access SMBus Slave Mode
FLOAT = Read External EEPROM (Master SMBUS Mode)
Tie 1kΩ to GND = Pin Mode
Control Pins — Shared (LVCMOS)
ENSMB
48
ENSMB = 1 (SMBUS MODE)
SCL
50
I, LVCMOS
O, OPEN Drain
ENSMB Master or Slave mode
SMBUS clock input is enabled (slave mode).
Clock output when loading EEPROM configuration (master mode).
SDA
49
I, LVCMOS,
O, OPEN Drain
ENSMB Master or Slave mode
The SMBus bidirectional SDA pin is enabled. Data input or open drain
(pull-down only) output.
AD0-AD3
54, 53, 47, 46
I, LVCMOS
ENSMB Master or Slave mode
SMBus Slave Address Inputs. In SMBus mode, these pins are the user
set SMBus slave address inputs.
READ_EN
26
I, LVCMOS
When using an External EEPROM, a transition from high to low starts
the load from the external EEPROM
EQA0, EQA1,
EQB0, EQB1
20, 19,
46, 47
I, 4-LEVEL
EQA[1:0] and EQB[1:0] control the level of equalization on the input pins.
The pins are active only when ENSMB is de-asserted (low). The 8
channels are organized into two banks. Bank A is controlled with the
EQA[1:0] pins and bank B is controlled with the EQB[1:0] pins. When
ENSMB goes high the SMBus registers provide independent control of
each channel. The EQB[1:0] pins are converted to SMBUS AD2/AD3
inputs. See Table 3.
DEMA0, DEMA1,
DEMB0, DEMB1
49, 50,
53, 54
I, 4-LEVEL
DEMA[1:0] and DEMB[1:0] control the level of de-emphasis of the output
driver. The pins are only active when ENSMB is de-asserted (low). The 8
channels are organized into two banks. Bank A is controlled with the
DEMA[1:0] pins and bank B is controlled with the DEMB[1:0] pins. When
ENSMB goes high the SMBus registers provide independent control of
each channel. The DEMA[1:0] pins are converted to SMBUS SCL/SDA
and DEMB[1:0] pins are converted to AD0, AD1 inputs.
See Table 4.
MODE
21
I, 4-LEVEL
MODE control pin selects operating modes.
Tie 1kΩ to GND = GEN 1,2 and SAS/SATA (up to 6 Gbps)
FLOAT = AUTO Rate Select (for PCIe)
Tie 20kΩ to GND = SAS-3 and GEN-3 without De-emphasis
Tie 1kΩ to VDD = SAS-3 and GEN-3 with De-emphasis
See Table 7
ENSMB = 0 (PIN MODE)
(1)
4
LVCMOS inputs without the "FLOAT" conditions must be driven to a logic low or high at all times or operation is not guaranteed.
Input edge rate for LVCMOS/FLOAT inputs must be faster than 50 ns from 10–90%.
For 3.3V mode operation, VIN pin = 3.3V and the "VDD" for the 4-level input is 3.3V.
For 2.5V mode operation, VDD pin = 2.5V and the "VDD" for the 4-level input is 2.5V.
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Table 1. Pin Descriptions(1) (continued)
Pin Name
Pin Number
I/O, Type
Pin Description
SD_TH
26
I, 4-LEVEL
Controls the internal Signal Detect Threshold.
See Table 6.
Control Pins — Both Pin and SMBus Modes (LVCMOS)
RXDET
22
I, 4-LEVEL
The RXDET pin controls the receiver detect function. Depending on the
input level, a 50Ω or >50kΩ termination to the power rail is enabled.
See Table 5.
RESERVED
23
I, 4-LEVEL
Float (leave pin open) = Normal Operation
VDD_SEL
25
INPUT
Controls the internal regulator
FLOAT = 2.5V mode
Tie GND = 3.3V mode
PWDN
52
I, LVCMOS
Tie High = Low power - power down
Tie GND = Normal Operation
See Table 5.
27
O, LVCMOS
Valid Register Load Status Output
HIGH = External EEPROM load failed or incomplete
LOW = External EEPROM load passed
VIN
24
Power
In 3.3V mode, feed 3.3V to VIN
In 2.5V mode, leave floating
VDD
9, 14, 36, 41, 51
Power
Power supply pins CML/analog
2.5V mode, connect to 2.5V supply
3.3V mode, connect 0.1uF cap to each VDD pin
GND
DAP
Power
Ground pad (DAP - die attach pad)
Outputs
ALL_DONE
Power
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1) (2)
Supply Voltage (VDD - 2.5V mode)
-0.5V to +2.75V
Supply Voltage (VIN - 3.3V mode)
-0.5V to +4.0V
LVCMOS Input/Output Voltage
-0.5V to +4.0V
CML Input Voltage
-0.5V to (VDD+0.5)
CML Input Current
-30 to +30 mA
Junction Temperature
125°C
Storage Temperature
-40°C to +125°C
Lead Temperature Range Soldering (4 sec.)
+260°C
Derate NJY Package
52.6mW/°C above +25°C
ESD Rating
HBM, STD - JESD22-A114F
3 kV
CDM, STD - JESD22-C101-D
Thermal Resistance
1000 V
θJC
11.5°C/W
θJA, No Airflow, 4 layer JEDEC
19.1°C/W
For soldering specifications: see product folder at www.ti.com
(1)
(2)
"Absolute Maximum Ratings" indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Absolute
Maximum Numbers are ensured for a junction temperature range of -40°C to +125°C. Models are validated to Maximum Operating
Voltages only.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
Recommended Operating Conditions
Min
Typ
Max
Unit
Supply voltage (2.5V mode)
2.375
2.5
2.625
V
Supply voltage (3.3V mode)
3.0
3.3
3.6
V
Ambient temperature
-40
25
+85
°C
SMBus (SDA, SCL)
Supply noise up to 50 MHz
(1)
(1)
3.6
V
100
mVp-p
Allowed supply noise (mVp-p sine wave) under typical conditions.
Electrical Characteristics (1) (2) (3)
Symbol
Parameter
Test Conditions
Power Dissipation
Min
Typ
Max
Unit
VDD = 2.5 V supply,
EQ Enabled,
VOD = 1.0 Vp-p,
RXDET = 1, PWDN = 0
500
700
mW
VIN = 3.3 V supply,
EQ Enabled,
VOD = 1.0 Vp-p,
RXDET = 1, PWDN = 0
660
900
mW
3.6
V
Power
PD
LVCMOS / LVTTL DC Specifications
Vih
(1)
(2)
(3)
6
High Level Input Voltage
2.0
Typical values represent most likely parametric norms at VDD = 2.5V, TA = 25°C., and at the Recommended Operation Conditions at
the time of product characterization and are not guaranteed.
The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not guaranteed.
Ensured by device characterization.
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Electrical Characteristics(1)(2)(3) (continued)
Symbol
Parameter
Vil
Low Level Input Voltage
Test Conditions
Voh
High Level Output Voltage
(ALL_DONE pin)
Ioh= −4mA
Vol
Low Level Output Voltage
(ALL_DONE pin)
Iol= 4mA
Iih
Input High Current (PWDN pin)
VIN = 3.6 V (pin 24),
Input under test = 3.6 V
Typ
0
Input High Current with internal
resistors
(4–level input pin)
Iil
Min
Input Low Current (PWDN pin)
VIN = 3.6 V (pin 24),
Input under test = 0 V
Input Low Current with internal
resistors
(4–level input pin)
Max
Unit
0.8
V
2.0
V
0.4
V
-15
+15
uA
+20
+150
uA
-15
+15
uA
-160
-40
uA
CML Receiver Inputs (IN_n+, IN_n-)
RLrx-diff
RX Differential return loss
0.05 - 7.5 GHz
-15
dB
7.5 - 15 GHz
-5
dB
-10
dB
RLrx-cm
RX Common mode return loss
0.05 - 5 GHz
Zrx-dc
RX DC common mode impedance
Tested at VDD = 2.5 V
40
50
60
Ω
Zrx-diff-dc
RX DC differntial mode impedance
Tested at VDD = 2.5 V
80
100
120
Ω
Vrx-diff-dc
Differential RX peak to peak voltage
(VID)
Tested at pins
0.6
1.0
1.2
V
Vrx-signal-det-diff-pp
Signal detect assert level for active
data signal
SD_TH = float,
0101 pattern at 12 Gbps
50
mVp-p
Vrx-idle-det-diff-pp
Signal detect de-assert level for
electrical idle
SD_TH = float,
0101 pattern at 12 Gbps
37
mVp-p
High Speed Outputs
Vtx-diff-pp
Output Voltage Differential Swing
Differential measurement with
OUT_n+ and OUT_n-,
terminated by 50Ω to GND,
AC-Coupled, VID = 1.0 Vp-p,
DEM0 = 1, DEM1 = 0 (4)
Vtx-de-ratio_3.5
TX de-emphasis ratio
VOD = 1.0 Vp-p,
DEM0 = 0, DEM1 = R,
Gen 1 and 2 modes only
-3.5
dB
Vtx-de-ratio_6
TX de-emphasis ratio
VOD = 1.0 Vp-p,
DEM0 = R, DEM1 = R
Gen1 and 2 modes only
-6
dB
TTX-HF-DJ-DD
TX Dj > 1.5 MHz
0.15
UI
TTX-LF-RMS
TX RMS jitter < 1.5 MHz
3.0
ps RMS
TTX-RISE-FALL
TX rise/fall time
20% to 80% of differential output
voltage
TRF-MISMATCH
TX rise/fall mismatch
20% to 80% of differential output
voltage
0.01
RLTX-DIFF
TX Differential return loss
0.05 - 7.5 GHz
-15
dB
7.5 - 15 GHz
-5
dB
0.05 - 5 GHz
-10
dB
RLTX-CM
TX Common mode return loss
ZTX-DIFF-DC
DC differential TX impedance
VTX-CM-AC-PP
TX AC peak-peak common mode
voltage
VOD = 1.0 Vp-p,
DEM0 = 1, DEM1 = 0
ITX-SHORT
TX short circuit current limit
Total current the transmitter can
supply when shorted to VDD or
GND
(4)
0.8
35
1.0
1.2
Vp-p
45
ps
0.1
UI
Ω
100
100
mVpp
20
mA
In SAS3 and GEN3 mode the output VOD level is not fixed. It will be adjusted automatically based on the VID input amplitude level. The
output VOD level set by DEMA/B[1:0] is dependent on the VID level and the frequency content. The DS125BR800A repeater in SAS3
and GEN3 mode is designed to be transparent, so the TX-FIR (de-emphasis) is passed to the RX to support link training.
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Electrical Characteristics(1)(2)(3) (continued)
Symbol
Parameter
Max
Unit
VTX-CM-DC-
Absolute delta of DC common mode
voltage during L0 and electrical idle
100
mV
Absolute delta of DC common mode
voltage between TX+ and TX-
25
mV
ACTIVE-IDLE-DELTA
VTX-CM-DC-LINEDELTA
Test Conditions
Min
Typ
TTX-IDLE-DATA
Max time to transition to differential
DATA signal after IDLE
VID = 1.0 Vp-p, 3 Gbps
3.5
ns
TTX-DATA-IDLE
Max time to transition to IDLE after
differential DATA signal
VID = 1.0 Vp-p, 3 Gbps
5.0
ns
TPLHD/PHLD
Differential Propagation Delay
EQ = 00 (5)
200
ps
TLSK
Lane to lane skew
T = 25C, VDD = 2.5V
25
ps
TPPSK
Part to part propagation delay skew
T = 25C, VDD = 2.5V
40
ps
DJE1
Residual deterministic jitter at 12 Gbps
30in 5mils FR4,
VID = 0.6 Vp-p,
PRBS15, EQ = 07'h,
DEM = 0 dB
0.18
UI
DJE2
Residual deterministic jitter at 8 Gbps
30in 5mils FR4,
VID = 0.6 Vp-p,
PRBS15,EQ = 07'h,
DEM = 0 dB
0.11
UI
DJE3
Residual deterministic jitter at 5 Gbps
30in 5mils FR4,
VID = 0.6 Vp-p,
PRBS15, EQ = 07'h,
DEM = 0 dB
0.07
UI
DJE4
Residual deterministic jitter at 12 Gbps
5m 30 awg cable,
VID = 0.6 Vp-p,
PRBS15, EQ = 07'h,
DEM = 0 dB
0.25
UI
DJE5
Residual deterministic jitter at 5 Gbps
8m 30 awg cable,
VID = 0.6 Vp-p,
PRBS15, EQ = 0F'h,
DEM = 0 dB
0.33
UI
Input Channel: 20in 5mils FR4,
Output Channel: 10in 5mils FR4
VID = 0.6 Vp-p,
PRBS15, EQ = 03'h,
VOD = 1.0 Vp-p,
DEM = −3.5 dB
0.1
UI
Equalization
De-emphasis (GEN 1,2 mode only)
DJD1
(5)
8
Residual deterministic jitter at 12 Gbps
Propagation Delay measurements will change slightly based on the level of EQ selected. EQ = 00 will result in the shortest propagation
delays.
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Electrical Characteristics — Serial Management Bus Interface
Over recommended operating supply and temperature ranges unless other specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
0.8
V
3.6
V
SERIAL BUS INTERFACE DC SPECIFICATIONS
VIL
Data, Clock Input Low Voltage
SDA and SCL
VIH
Data, Clock Input High Voltage
SDA and SCL
IPULLUP
Current Through Pull-Up Resistor
or Current Source
High Power Specification
VDD
Nominal Bus Voltage
ILEAK-Bus
Input Leakage Per Bus Segment
ILEAK-Pin
Input Leakage Per Device Pin
CI
Capacitance for SDA and SCL
(1) (2)
RTERM
External Termination Resistance
pull to VDD = 2.5V ± 5% OR 3.3V
± 10%
Pullup VDD = 3.3V (1)
(2) (3)
Pullup VDD = 2.5V (1)
(2) (3)
2.1
(1)
4
mA
2.375
3.6
V
-200
+200
µA
-15
µA
10
pF
2000
Ω
1000
Ω
SERIAL BUS INTERFACE TIMING SPECIFICATIONS
FSMB
Bus Operating Frequency
ENSMB = VDD (Slave Mode)
TBUF
Bus Free Time Between Stop and
Start Condition
THD:STA
Hold time after (Repeated) Start
Condition. After this period, the
first clock is generated.
ENSMB = FLOAT (Master Mode)
280
400
400
kHz
520
kHz
1.3
µs
0.6
µs
At IPULLUP, Max
TSU:STA
Repeated Start Condition Setup
Time
0.6
µs
TSU:STO
Stop Condition Setup Time
0.6
µs
THD:DAT
Data Hold Time
0
ns
TSU:DAT
Data Setup Time
100
ns
TLOW
Clock Low Period
THIGH
Clock High Period
(4)
tF
Clock/Data Fall Time
tR
Clock/Data Rise Time
tPOR
Time in which a device must be
operational after power-on reset
(1)
(2)
(3)
(4)
(5)
1.3
0.6
µs
50
µs
(4)
300
ns
(4)
300
ns
500
ms
(4) (5)
Recommended value.
Recommended maximum capacitance load per bus segment is 400pF.
Maximum termination voltage should be identical to the device supply voltage.
Compliant to SMBus 2.0 physical layer specification. See System Management Bus (SMBus) Specification Version 2.0, section 3.1.1
SMBus common AC specifications for details.
Ensured by Design. Parameter not tested in production.
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TIMING DIAGRAMS
(OUT+)
80%
80%
VOD (p-p) = (OUT+) ± (OUT-)
0V
20%
20%
(OUT-)
tRISE
tFALL
Figure 2. CML Output and Rise and FALL Transition Time
+
IN
0V
tPLHD
tPHLD
+
OUT
0V
-
Figure 3. Propagation Delay Timing Diagram
+
IN
0V
DATA
tDATA-IDLE
tIDLE-DATA
+
OUT
0V
DATA
IDLE
IDLE
Figure 4. Transmit IDLE-DATA and DATA-IDLE Response Time
tLOW
tR
tHIGH
SCL
tHD:STA
tBUF
tHD:DAT
tF
tSU:STA
tSU:DAT
tSU:STO
SDA
SP
ST
ST
SP
Figure 5. SMBus Timing Parameters
10
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FUNCTIONAL DESCRIPTION
The DS125BR800A compensates for lossy FR-4 printed circuit board backplanes and balanced cables. The
DS125BR800A operates in 3 modes: Pin Control Mode (ENSMB = 0), SMBus Slave Mode (ENSMB = 1) and
SMBus Master Mode (ENSMB = float) to load register information from external EEPROM; please refer to
SMBUS Master Mode for additional information.
Pin Control Mode:
When in pin mode (ENSMB = 0), equalization and de-emphasis can be selected via pin for each side
independently. When de-emphasis is asserted VOD is automatically adjusted per Table 4. For PCIe applications,
the RXDET pins provides automatic and manual control for input termination (50Ω or >50KΩ). MODE setting is
also pin controllable with pin selections (Gen 1/2, auto detect and SAS-3 / PCIe Gen 3). The receiver electrical
idle detect threshold is also adjustable via the SD_TH pin.
SMBUS Mode:
When in SMBus mode (ENSMB = 1), the VOD (output amplitude), equalization, de-emphasis, and termination
disable features are all programmable on a individual lane basis, instead of grouped by A or B as in the pin mode
case. Upon assertion of ENSMB, the EQx and DEMx functions revert to register control immediately. The EQx
and DEMx pins are converted to AD0-AD3 SMBus address inputs. The other external control pins (MODE,
RXDET and SD_TH) remain active unless their respective registers are written to and the appropriate override bit
is set, in which case they are ignored until ENSMB is driven low (pin mode). On power-up and when ENSMB is
driven low all registers are reset to their default state. If PWDN is asserted while ENSMB is high, the registers
retain their current state.
Equalization settings accessible via the pin controls were chosen to meet the needs of most PCIe applications. If
additional fine tuning or adjustment is needed, additional equalization settings can be accessed via the SMBus
registers. Each input has a total of 256 possible equalization settings. The tables show the 16 setting when the
device is in pin mode. When using SMBus mode, the equalization, VOD and de-Emphasis levels are set by
registers.
The 4-Level input pins utilize a resistor divider to help set the 4 valid levels and provide a wider range of control
settings when ENSMB=0. There is an internal 30K pull-up and a 60K pull-down connected to the package pin.
These resistors, together with the external resistor connection combine to achieve the desired voltage level.
Using the 1K pull-up, 1K pull-down, no connect, and 20K pull-down provide the optimal voltage levels for each of
the four input states.
Table 2. 4-Level Control Pin Settings
Level
Setting
3.3V Mode
2.5V Mode
0
Tie 1kΩ to GND
0.10 V
0.08 V
1/3 x VDD
R
Tie 20kΩ to GND
1/3 x VIN
Float
Float (leave pin open)
2/3 x VIN
2/3 x VDD
1
Tie 1kΩ to VDD
VIN - 0.05 V
VDD - 0.04 V
Typical 4-Level Input Thresholds
• Level 1 - 2 = 0.2 * VIN or VDD
• Level 2 - 3 = 0.5 * VIN or VDD
• Level 3 - 4 = 0.8 * VIN or VDD
In order to minimize the startup current associated with the integrated 2.5V regulator the 1K pull-up / pull-down
resistors are recommended. If several 4 level inputs require the same setting, it is possible to combine two or
more 1K resistors into a single lower value resistor. As an example; combining two inputs with a single 500 Ohm
resistor is a good way to save board space.
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3.3V or 2.5V Supply Mode Operation
The DS125BR800A has an optional internal voltage regulator to provide the 2.5V supply to the device. In 3.3V
mode operation, the VIN pin = 3.3V is used to supply power to the device. The internal regulator will provide the
2.5V to the VDD pins of the device and a 0.1 uF cap is needed at each of the 5 VDD pins for power supply decoupling (total capacitance should be ≤0.5 uF), and the VDD pins should be left open. The VDD_SEL pin must
be tied to GND to enable the internal regulator. In 2.5V mode operation, the VIN pin should be left open and 2.5V
supply must be applied to the 5 VDD pins to power the device. The VDD_SEL pin must be left open (no connect)
to disable the internal regulator.
3.3V mode
2.5V mode
VDD_SEL
Enable
VDD_SEL
open
VIN
open
Disable
3.3V
1 uF
VIN
10 uF
Internal
voltage
regulator
2.5V
VDD
VDD
0.1 uF
0.1 uF
VDD
VDD
0.1 uF
0.1 uF
1 uF
2.5V
Capacitors can be
either tantalum or an
ultra-low ESR seramic.
10 uF
Internal
voltage
regulator
Capacitors can be
either tantalum or an
ultra-low ESR seramic.
VDD
VDD
0.1 uF
0.1 uF
VDD
VDD
0.1 uF
0.1 uF
VDD
VDD
0.1 uF
0.1 uF
Place 0.1 uF close to VDD Pin
Total capacitance should be 7 0.5 uF
Place capcitors close to VDD Pin
Figure 6. 3.3V or 2.5V Supply Connection Diagram
PCIE SIGNAL INTEGRITY
When using the DS125BR800A in PCIe GEN-3 systems, there are specific signal integrity settings to ensure
signal integrity margin. The settings were achieved with completing extensive testing. Please contact your field
representative for more information regarding the testing completed to achieve these settings.
For tuning the in the downstream direction (from CPU to EP).
• EQ: use the guidelines outlined in Table 3.
• De-Emphasis: use the guidelines outlined in Table 4.
• VOD: use the guidelines outlined in Table 4.
For tuning in the upstream direction (from EP to CPU).
• EQ: use the guidelines outlined in Table 3.
• De-Emphasis:
– For trace lengths < 15" set to -3.5 dB
– For trace lengths > 15" set to -6 dB
• VOD: set to 900 mV
12
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Table 3. Equalizer Settings
Level
EQA1
EQB1
EQA0
EQB
EQ – 8 bits [7:0]
dB at
1.5 GHz
dB at
2.5 GHz
dB at
4 GHz
dB at
6 GHz
Suggested Use (1)
1
0
0
0000 0000 = 0x00
2.5
3.5
3.8
3.1
FR4 < 5 inch trace
2
0
R
0000 0001 = 0x01
3.8
5.4
6.7
6.7
FR4 5-10 inch trace
3
0
Float
0000 0010 = 0x02
5.0
7.0
8.4
8.4
FR4 10 inch trace
4
0
1
0000 0011 = 0x03
5.9
8.0
9.3
9.1
FR4 15-20 inch trace
5
R
0
0000 0111 = 0x07
7.4
10.3
12.8
13.7
FR4 20-30 inch trace
6
R
R
0001 0101 = 0x15
6.9
10.2
13.9
16.2
FR4 25-30 inch trace
7
R
Float
0000 1011 = 0x0B
9.0
12.4
15.3
15.9
FR4 25-30 inch trace
8
R
1
0000 1111 = 0x0F
10.2
13.8
16.7
17.0
8m, 30awg cable
9
Float
0
0101 0101 = 0x55
8.5
12.6
17.5
20.7
> 8m cable
10
Float
R
0001 1111 = 0x1F
11.7
16.2
20.3
21.8
11
Float
Float
0010 1111 = 0x2F
13.2
18.3
22.8
23.6
12
Float
1
0011 1111 = 0x3F
14.4
19.8
24.2
24.7
13
1
0
1010 1010 = 0xAA
14.4
20.5
26.4
28.0
14
1
R
0111 1111 = 0x7F
16.0
22.2
27.8
29.2
15
1
Float
1011 1111 = 0xBF
17.6
24.4
30.2
30.9
16
1
1
1111 1111 = 0xFF
18.7
25.8
31.6
31.9
(1)
Cable and FR4 lengths are for reference only. FR4 lengths based on a 100 Ohm differential stripline with 5-mil traces and 8-mil trace
separation. Optimal EQ setting should be determined via simulation and prototype verification.
Table 4. Output Voltage and De-emphasis Settings
(1)
(2)
Level
DEMA1
DEMB1
DEMA0
DEMB0
VOD Vp-p
DEM dB (1)
Inner Amplitude
Vp-p
Suggested Use (2)
1
0
0
0.8
0
0.8
FR4 <5 inch 4–mil trace
2
0
R
0.9
0
0.9
FR4 <5 inch 4–mil trace
3
0
Float
0.9
- 3.5
0.6
FR4 10 inch 4–mil trace
4
0
1
1.0
0
1.0
FR4 <5 inch 4–mil trace
5
R
0
1.0
- 3.5
0.7
FR4 10 inch 4–mil trace
6
R
R
1.0
-6
0.5
FR4 15 inch 4–mil trace
7
R
Float
1.1
0
1.1
FR4 <5 inch 4–mil trace
8
R
1
1.1
- 3.5
0.7
FR4 10 inch 4–mil trace
9
Float
0
1.1
-6
0.6
FR4 15 inch 4–mil trace
10
Float
R
1.2
0
1.2
FR4 <5 inch 4–mil trace
11
Float
Float
1.2
- 3.5
0.8
FR4 10 inch 4–mil trace
12
Float
1
1.2
-6
0.6
FR4 15 inch 4–mil trace
13
1
0
1.3
0
1.3
FR4 <5 inch 4–mil trace
14
1
R
1.3
- 3.5
0.9
FR4 10 inch 4–mil trace
15
1
Float
1.3
-6
0.7
FR4 15 inch 4–mil trace
16
1
1
1.3
-9
0.5
FR4 20 inch 4–mil trace
The VOD output amplitude and DEM de-emphasis levels are set with the DEMA/B[1:0] pins.
The de-emphasis levels are available in SAS-3 / PCIe GEN-3 modes when MODE = 1
FR4 lengths are for reference only. FR4 lengths based on a 100 Ohm differential stripline with 5-mil traces and 8-mil trace separation.
Optimal DEM settings should be determined via simulation and prototype verification.
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Table 5. RX-Detect Settings
PWDN
(PIN 52)
RXDET
(PIN 22)
SMBus REG
bit [3:2]
Input Termination
Recommeded
Use
Comments
0
0
00
Hi-Z
X
Manual RX-Detect, input is high impedance mode
0
Tie 20kΩ
to GND
01
Pre Detect: Hi-Z
Post Detect: 50 Ω
PCIe Only
Auto RX-Detect, outputs test every 12 msec for
600 msec then stops; termination is Hi-Z until
detection; once detected input termination is 50 Ω
Reset function by pulsing PWDN high for 5 usec
then low again
0
Float
(Default)
10
Pre Detect: Hi-Z
Post Detect: 50 Ω
PCIe Only
Auto RX-Detect, outputs test every 12 msec until
detection occurs; termination is Hi-Z until RX
detection; once detected input termination is 50 Ω
0
1
11
50 Ω
All Others
Manual RX-Detect, input is 50 Ω
1
X
High Impedance
X
Power down mode, input is Hi-Z, output drivers
are disabled
Used to reset RX-Detect State Machine when held
high for 5 usec
RX-Detect in SAS/SATA Applications
Unlike PCIe systems, SAS/SATA systems use a low speed Out-Of-Band or OOB communications sequence to
detect and communicate between Controllers/Expanders and target drives. This communication eliminates the
need to detect for endpoints like PCIe. For SAS systems, it is recommended to tie the RXDET pin high. This will
ensure any OOB sequences sent from the Controller/Expander will reach the target drive without any additional
latency due to the termination detection sequence defined by PCIe.
Table 6. OOB and Signal Detect Threshold Level (1)
SD_TH
(PIN 26)
SMBus REG bit [3:2] and
[1:0]
3 Gbps
12 Gbps
3 Gbps
12 Gbps
0
10
18
75
14
55
R
01
12
40
8
22
F
(default)
00
15
50
11
37
1
11
16
58
12
45
(1)
[3:2] Assert Level (mVp-p)
[1:0] De-assert Level (mVp-p)
VDD = 2.5V, 25°C, 11 00 11 00 pattern at 3 Gbps and 101010 pattern at 12 Gbps
Table 7. MODE Operation With Pin Control
MODE
(PIN 21)
Driver Characteristics
0
Limiting
R
Transparent without DE
F (default)
Automatic
1
Transparent with DE
PCIe
SAS
SATA
10GbE
CPRI
OBSAI
SRIO
(R)XAUI
Interlaken
Infiniband
X (≤ 6G)
X
X
X
X
X
X (SAS-3)
MODE operation with SMBus Registers
When in SMBus mode (Slave or Master), the MODE pin retains control of the output driver characteristics. In
order to override this control function, Register 0x08[2] must be written with a "1". Writting this bit enables MODE
control of each channel individually using the channel registers defined in Table 11.
14
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SMBUS MASTER MODE
The DS125BR800A devices support reading directly from an external EEPROM device by implementing SMBus
Master mode. When using the SMBus master mode, the DS125BR800A will read directly from specific location in
the external EEPROM. When designing a system for using the external EEPROM, the user needs to follow these
specific guidelines.
• Maximum EEPROM size is 8 kbits (1024 x 8-bit)
• Set ENSMB = Float — enable the SMBUS master mode.
• The external EEPROM device address byte must be 0xA0'h and capable of 400 kHz operation at 2.5V and
3.3V supply.
• Set the AD[3:0] inputs for SMBus address byte. When the AD[3:0] = 0000'b, the device address byte is B0'h.
When tying multiple DS125BR800A devices to the SDA and SCL bus, use these guidelines to configure the
devices.
• Use SMBus AD[3:0] address bits so that each device can loaded it's configuration from the EEPROM.
Example below is for 4 devices. The first device n the sequence must be address 0xB0'h, subsequent
devices must follow the address order listed below.
– U1: AD[3:0] = 0000 = 0xB0'h,
– U2: AD[3:0] = 0001 = 0xB2'h,
– U3: AD[3:0] = 0010 = 0xB4'h,
– U4: AD[3:0] = 0011 = 0xB6'h
• Use a pull-up resistor on SDA and SCL; value = 2k ohms
• Daisy-chain READEN# (pin 26) and ALL_DONE# (pin 27) from one device to the next device in the sequence
so that they do not compete for the EEPROM at the same time.
1. Tie READEN# of the 1st device in the chain (U1) to GND
2. Tie ALL_DONE# of U1 to READEN# of U2
3. Tie ALL_DONE# of U2 to READEN# of U3
4. Tie ALL_DONE# of U3 to READEN# of U4
5. Optional: Tie ALL_DONE# output of U4 to a LED to show the devices have been loaded successfully
Below is an example of a 2 kbits (256 x 8-bit) EEPROM in hex format for the DS125BR800A device. The first 3
bytes of the EEPROM always contain a header common and necessary to control initialization of all devices
connected to the I2C bus. CRC enable flag to enable/disable CRC checking. If CRC checking is disabled, a fixed
pattern (8’hA5) is written/read instead of the CRC byte from the CRC location, to simplify the control. There is a
MAP bit to flag the presence of an address map that specifies the configuration data start in the EEPROM. If the
MAP bit is not present the configuration data start address is derived from the DS125BR800A address and the
configuration data size. A bit to indicate an EEPROM size > 256 bytes is necessary to properly address the
EEPROM. There are 37 bytes of data size for each DS125BR800A device.
:2000000000001000000407002FAD4002FAD4002FAD4002FAD401805F5A8005F5A8005F5AD8
:200020008005F5A800005454000000000000000000000000000000000000000000000000F6
:20006000000000000000000000000000000000000000000000000000000000000000000080
:20008000000000000000000000000000000000000000000000000000000000000000000060
:2000A000000000000000000000000000000000000000000000000000000000000000000040
:2000C000000000000000000000000000000000000000000000000000000000000000000020
:2000E000000000000000000000000000000000000000000000000000000000000000000000
:200040000000000000000000000000000000000000000000000000000000000000000000A0
Note: The maximum EEPROM size supported is 8 kbits (1024 x 8-bits).
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Table 8. EEPROM Register Map - Single Device with Default Value
EEPROM Address Byte
Bit 7
Bit 6
Bit 4
Bit 3
Bit 2
Bit 1
BIt 0
Description
CRC EN
Address Map Present EEPROM > 256
Bytes
RES
DEVICE COUNT[3]
DEVICE COUNT[2]
DEVICE COUNT[1]
DEVICE COUNT[0]
0
0
0
0
0
0
0
0
RES
RES
RES
RES
RES
RES
RES
RES
0
0
0
0
0
0
0
0
Max EEPROM Burst
size[7]
Max EEPROM Burst
size[6]
Max EEPROM Burst
size[5]
Max EEPROM Burst
size[4]
Max EEPROM Burst
size[3]
Max EEPROM Burst
size[2]
Max EEPROM Burst
size[1]
Max EEPROM Burst
size[0]
0
0
0
0
0
0
0
0
PWDN_ch7
PWDN_ch6
PWDN_ch5
PWDN_ch4
PWDN_ch3
PWDN_ch2
PWDN_ch1
PWDN_ch0
0
0
0
0
0
0
0
0
lpbk_1
lpbk_0
PWDN_INPUTS
PWDN_OSC
Ovrd_PWDN
ch7_BST_8
ch7_BST_8
ch7_BST_8
0
0
0
0
0
0
0
0
ch7_BST_8
ch7_BST_8
ch7_BST_8
ch7_BST_8
ch7_BST_8
rxdet_btb_en
Ovrd_idle_th
Ovrd_RES
0
0
0
0
0
1
0
0
Ovrd_IDLE
Ovrd_RX_DET
Ovrd_MODE
Ovrd_RES
Ovrd_RES
rx_delay_sel_2
rx_delay_sel_1
rx_delay_sel_0
0
0
0
0
0
1
1
1
RD_delay_sel_3
RD_delay_sel_2
RD_delay_sel_1
RD_delay_sel_0
ch0_Idle_auto
ch0_Idle_sel
ch0_RXDET_1
ch0_RXDET_0
0
0
0
0
0
0
0
0
ch0_BST_7
ch0_BST_6
ch0_BST_5
ch0_BST_4
ch0_BST_3
ch0_BST_2
ch0_BST_1
ch0_BST_0
0
0
1
0
1
1
1
1
ch0_Sel_scp
ch0_Sel_mode
ch0_RES_2
ch0_RES_1
ch0_RES_0
ch0_VOD_2
ch0_VOD_1
ch0_VOD_0
1
0
1
0
1
1
0
1
ch0_DEM_2
ch0_DEM_1
ch0_DEM_0
ch0_Slow
ch0_idle_tha_1
ch0_idle_tha_0
ch0_idle_thd_1
ch0_idle_thd_0
0
1
0
0
0
0
0
0
ch1_Idle_auto
ch1_Idle_sel
ch1_RXDET_1
ch1_RXDET_0
ch1_BST_7
ch1_BST_6
ch1_BST_5
ch1_BST_4
0
0
0
0
0
0
1
0
ch1_BST_3
ch1_BST_2
ch1_BST_1
ch1_BST_0
ch1_Sel_scp
ch1_Sel_mode
ch1_RES_2
ch1_RES_1
1
1
1
1
1
0
1
0
ch1_RES_0
ch1_VOD_2
ch1_VOD_1
ch1_VOD_0
ch1_DEM_2
ch1_DEM_1
ch1_DEM_0
ch1_Slow
1
1
0
1
0
1
0
0
ch1_idle_tha_1
ch1_idle_tha_0
ch1_idle_thd_1
ch1_idle_thd_0
ch2_Idle_auto
ch2_Idle_sel
ch2_RXDET_1
ch2_RXDET_0
0
0
0
0
0
0
0
0
ch2_BST_7
ch2_BST_6
ch2_BST_5
ch2_BST_4
ch2_BST_3
ch2_BST_2
ch2_BST_1
ch2_BST_0
0
0
1
0
1
1
1
1
ch2_Sel_scp
ch2_Sel_mode
ch2_RES_2
ch2_RES_1
ch2_RES_0
ch2_VOD_2
ch2_VOD_1
ch2_VOD_0
1
0
1
0
1
1
0
1
0
Value
Description
1
Value
Description
2
Value
Description
3
Value
Description
4
Value
Description
5
Value
Description
6
Value
Description
7
Value
Description
8
Value
Description
9
Value
Description
10
Value
Description
11
Value
Description
12
Value
Description
13
Value
Description
14
Value
Description
15
Value
Description
Value
16
16
Bit 5
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Table 8. EEPROM Register Map - Single Device with Default Value (continued)
EEPROM Address Byte
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
BIt 0
Description
ch2_DEM_2
ch2_DEM_1
ch2_DEM_0
ch2_Slow
ch2_idle_tha_1
ch2_idle_tha_0
ch2_idle_thd_1
ch2_idle_thd_0
0
1
0
0
0
0
0
0
ch3_Idle_auto
ch3_Idle_sel
ch3_RXDET_1
ch3_RXDET_0
ch3_BST_7
ch3_BST_6
ch3_BST_5
ch3_BST_4
0
0
0
0
0
0
1
0
ch3_BST_3
ch3_BST_2
ch3_BST_1
ch3_BST_0
ch3_Sel_scp
ch3_Sel_mode
ch3_RES_2
ch3_RES_1
1
1
1
1
1
0
1
0
ch3_RES_0
ch3_VOD_2
ch3_VOD_1
ch3_VOD_0
ch3_DEM_2
ch3_DEM_1
ch3_DEM_0
ch3_Slow
1
1
0
1
0
1
0
0
ch3_idle_tha_1
ch3_idle_tha_0
ch3_idle_thd_1
ch3_idle_thd_0
ovrd_fast_idle
en_high_idle_th_n
en_high_idle_th_s
en_fast_idle_n
0
0
0
0
0
0
0
1
en_fast_idle_s
eqsd_mgain_n
eqsd_mgain_s
ch4_Idle_auto
ch4_Idle_sel
ch4_RXDET_1
ch4_RXDET_0
ch4_BST_7
1
0
0
0
0
0
0
0
ch4_BST_6
ch4_BST_5
ch4_BST_4
ch4_BST_3
ch4_BST_2
ch4_BST_1
ch4_BST_0
ch4_Sel_scp
0
1
0
1
1
1
1
1
ch4_Sel_mode
ch4_RES_2
ch4_RES_1
ch4_RES_0
ch4_VOD_2
ch4_VOD_1
ch4_VOD_0
ch4_DEM_2
0
1
0
1
1
0
1
0
ch4_DEM_1
ch4_DEM_0
ch4_Slow
ch4_idle_tha_1
ch4_idle_tha_0
ch4_idle_thd_1
ch4_idle_thd_0
ch5_Idle_auto
1
0
0
0
0
0
0
0
ch5_Idle_sel
ch5_RXDET_1
ch5_RXDET_0
ch5_BST_7
ch5_BST_6
ch5_BST_5
ch5_BST_4
ch5_BST_3
0
0
0
0
0
1
0
1
ch5_BST_2
ch5_BST_1
ch5_BST_0
ch5_Sel_scp
ch5_Sel_mode
ch5_RES_2
ch5_RES_1
ch5_RES_0
1
1
1
1
0
1
0
1
ch5_VOD_2
ch5_VOD_1
ch5_VOD_0
ch5_DEM_2
ch5_DEM_1
ch5_DEM_0
ch5_Slow
ch5_idle_tha_1
1
0
1
0
1
0
0
0
ch5_idle_tha_0
ch5_idle_thd_1
ch5_idle_thd_0
ch6_Idle_auto
ch6_Idle_sel
ch6_RXDET_1
ch6_RXDET_0
ch6_BST_7
0
0
0
0
0
0
0
0
ch6_BST_6
ch6_BST_5
ch6_BST_4
ch6_BST_3
ch6_BST_2
ch6_BST_1
ch6_BST_0
ch6_Sel_scp
0
1
0
1
1
1
1
1
ch6_Sel_mode
ch6_RES_2
ch6_RES_1
ch6_RES_0
ch6_VOD_2
ch6_VOD_1
ch6_VOD_0
ch6_DEM_2
0
1
0
1
1
0
1
0
ch6_DEM_1
ch6_DEM_0
ch6_Slow
ch6_idle_tha_1
ch6_idle_tha_0
ch6_idle_thd_1
ch6_idle_thd_0
ch7_Idle_auto
1
0
0
0
0
0
0
0
ch7_Idle_sel
ch7_RXDET_1
ch7_RXDET_0
ch7_BST_7
ch7_BST_6
ch7_BST_5
ch7_BST_4
ch7_BST_3
0
0
0
0
0
1
0
1
ch7_BST_2
ch7_BST_1
ch7_BST_0
ch7_Sel_scp
ch7_Sel_mode
ch7_RES_2
ch7_RES_1
ch7_RES_0
1
1
1
1
0
1
0
1
17
Value
Description
18
Value
Description
19
Value
Description
20
Value
Description
21
Value
Description
22
Value
Description
23
Value
Description
24
Value
Description
25
Value
Description
26
Value
Description
27
Value
Description
28
Value
Description
29
Value
Description
30
Value
Description
31
Value
Description
32
Value
Description
33
Value
Description
Value
34
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Table 8. EEPROM Register Map - Single Device with Default Value (continued)
EEPROM Address Byte
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
BIt 0
Description
ch7_VOD_2
ch7_VOD_1
ch7_VOD_0
ch7_DEM_2
ch7_DEM_1
ch7_DEM_0
ch7_Slow
ch7_idle_tha_1
1
0
1
0
1
0
0
0
ch7_idle_tha_0
ch7_idle_thd_1
ch7_idle_thd_0
iph_dac_ns_1
iph_dac_ns_0
ipp_dac_ns_1
ipp_dac_ns_0
ipp_dac_1
0
0
0
0
0
0
0
0
ipp_dac_0
RD23_67
RD01_45
RD_PD_ovrd
RD_Sel_test
RD_RESET_ovrd
PWDB_input_DC
DEM_VOD_ovrd
0
0
0
0
0
0
0
0
DEM_ovrd_N2
DEM_ovrd_N1
DEM_ovrd_N0
VOD_ovrd_N2
VOD_ovrd_N1
VOD_ovrd_N0
SPARE0
SPARE1
0
1
0
1
0
1
0
0
DEM__ovrd_S2
DEM__ovrd_S1
DEM_ovrd_S0
VOD_ovrd_S2
VOD_ovrd_S1
VOD_ovrd_S0
SPARE0
SPARE1
0
1
0
1
0
1
0
0
35
Value
Description
36
Value
Description
37
Value
Description
38
Value
Description
Value
18
39
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Table 9. Example of EEPROM for Four Devices Using Two Address Maps
EEPROM Address
Address (Hex)
EEPROM Data
0
00
0x43
Comments
1
01
0x00
2
02
0x08
EEPROM Burst Size
3
03
0x00
CRC not used
4
04
0x0B
Device 0 Address Location
5
05
0x00
CRC not used
6
06
0x0B
Device 1 Address Location
7
07
0x00
CRC not used
8
08
0x30
Device 2 Address Location
9
09
0x00
CRC not used
10
0A
0x30
Device 3 Address Location
11
0B
0x00
Begin Device 0, 1 - Address Offset 3
12
0C
0x00
13
0D
0x04
14
0E
0x07
15
0F
0x00
16
10
0x00
EQ CHB0 = 00
17
11
0xAB
VOD CHB0 = 1.0V
18
12
0x00
DEM CHB0 = 0 (0dB)
19
13
0x00
EQ CHB1 = 00
20
14
0x0A
VOD CHB1 = 1.0V
21
15
0xB0
DEM CHB1 = 0 (0dB)
22
16
0x00
23
17
0x00
EQ CHB2 = 00
24
18
0xAB
VOD CHB2 = 1.0V
25
19
0x00
DEM CHB2 = 0 (0dB)
26
1A
0x00
EQ CHB3 = 00
27
1B
0x0A
VOD CHB3 = 1.0V
28
1C
0xB0
DEM CHB3 = 0 (0dB)
29
1D
0x01
30
1E
0x80
31
1F
0x01
EQ CHA0 = 00
32
20
0x56
VOD CHA0 = 1.0V
33
21
0x00
DEM CHA0 = 0 (0dB)
34
22
0x00
EQ CHA1 = 00
35
23
0x15
VOD CHA1 = 1.0V
36
24
0x60
DEM CHA1 = 0 (0dB)
37
25
0x00
38
26
0x01
EQ CHA2 = 00
39
27
0x56
VOD CHA2 = 1.0V
40
28
0x00
DEM CHA2 = 0 (0dB)
41
29
0x00
EQ CHA3 = 00
42
2A
0x15
VOD CHA3 = 1.0V
43
2B
0x60
DEM CHA3 = 0 (0dB)
44
2C
0x00
45
2D
0x00
46
2E
0x54
CRC_EN = 0, Address Map = 1, >256 bytes = 0, Device Count[3:0] = 3
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Table 9. Example of EEPROM for Four Devices Using Two Address Maps (continued)
47
2F
0x54
End Device 0, 1 - Address Offset 39
48
30
0x00
Begin Device 2, 3 - Address Offset 3
49
31
0x00
50
32
0x04
51
33
0x07
52
34
0x00
53
35
0x00
EQ CHB0 = 00
54
36
0xAB
VOD CHB0 = 1.0V
55
37
0x00
DEM CHB0 = 0 (0dB)
56
38
0x00
EQ CHB1 = 00
57
39
0x0A
VOD CHB1 = 1.0V
58
3A
0xB0
DEM CHB1 = 0 (0dB)
59
3B
0x00
60
3C
0x00
EQ CHB2 = 00
61
3D
0xAB
VOD CHB2 = 1.0V
62
3E
0x00
DEM CHB2 = 0 (0dB)
63
3F
0x00
EQ CHB3 = 00
64
40
0x0A
VOD CHB3 = 1.0V
65
41
0xB0
DEM CHB3 = 0 (0dB)
66
42
0x01
67
43
0x80
68
44
0x01
EQ CHA0 = 00
69
45
0x56
VOD CHA0 = 1.0V
70
46
0x00
DEM CHA0 = 0 (0dB)
71
47
0x00
EQ CHA1 = 00
72
48
0x15
VOD CHA1 = 1.0V
73
49
0x60
DEM CHA1 = 0 (0dB)
74
4A
0x00
75
4B
0x01
EQ CHA2 = 00
76
4C
0x56
VOD CHA2 = 1.0V
77
4D
0x00
DEM CHA2 = 0 (0dB)
78
4E
0x00
EQ CHA3 = 00
79
4F
0x15
VOD CHA3 = 1.0V
80
50
0x60
DEM CHA3 = 0 (0dB)
81
51
0x00
82
52
0x00
83
53
0x54
84
54
0x54
End Device 2, 3 - Address Offset 39
NOTE: CRC_EN = 0, Address Map = 1, >256 byte = 0, Device Count[3:0] = 3. This example has all 8 channels
set to EQ = 00 (min boost), VOD = 1.0V, DEM = 0 (0dB) and multiple device can point to the same address map.
Maximum EEPROM size is 8 kbits (1024 x 8-bits).
20
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SYSTEM MANAGEMENT BUS (SMBUS) AND CONFIGURATION REGISTERS
The System Management Bus interface is compatible to SMBus 2.0 physical layer specification. ENSMB = 1kΩ
to VDD to enable SMBus slave mode and allow access to the configuration registers.
The DS125BR800A has the AD[3:0] inputs in SMBus mode. These pins are the user set SMBUS slave address
inputs. The AD[3:0] pins have internal pull-down. When left floating or pulled low the AD[3:0] = 0000'b, the device
default address byte is B0'h. Based on the SMBus 2.0 specification, the DS125BR800A has a 7-bit slave
address. The LSB is set to 0'b (for a WRITE). The device supports up to 16 address byte, which can be set with
the AD[3:0] inputs. Below are the 16 addresses.
Table 10. Device Slave Address Bytes
AD[3:0] Settings
Address Bytes (HEX)
0000
B0
0001
B2
0010
B4
0011
B6
0100
B8
0101
BA
0110
BC
0111
BE
1000
C0
1001
C2
1010
C4
1011
C6
1100
C8
1101
CA
1110
CC
1111
CE
The SDA, SCL pins are 3.3V tolerant, but are not 5V tolerant. External pull-up resistor is required on the SDA.
The resistor value can be from 1 kΩ to 5 kΩ depending on the voltage, loading and speed. The SCL may also
require an external pull-up resistor and it depends on the Host that drives the bus.
TRANSFER OF DATA VIA THE SMBus
During normal operation the data on SDA must be stable during the time when SCL is High.
There are three unique states for the SMBus:
START: A High-to-Low transition on SDA while SCL is High indicates a message START condition.
STOP: A Low-to-High transition on SDA while SCL is High indicates a message STOP condition.
IDLE: If SCL and SDA are both High for a time exceeding tBUF from the last detected STOP condition or if they
are High for a total exceeding the maximum specification for tHIGH then the bus will transfer to the IDLE state.
SMBus TRANSACTIONS
The device supports WRITE and READ transactions. See Table 11 for register address, type (Read/Write, Read
Only), default value and function information.
WRITING A REGISTER
To
1.
2.
3.
4.
write a register, the following protocol is used (see SMBus 2.0 specification).
The Host drives a START condition, the 7-bit SMBus address, and a "0" indicating a WRITE.
The Device (Slave) drives the ACK bit ("0").
The Host drives the 8-bit Register Address.
The Device drives an ACK bit ("0").
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5. The Host drive the 8-bit data byte.
6. The Device drives an ACK bit ("0").
7. The Host drives a STOP condition.
The WRITE transaction is completed, the bus goes IDLE and communication with other SMBus devices may
now occur.
READING A REGISTER
To read a register, the following protocol is used (see SMBus 2.0 specification).
1. The Host drives a START condition, the 7-bit SMBus address, and a "0" indicating a WRITE.
2. The Device (Slave) drives the ACK bit ("0").
3. The Host drives the 8-bit Register Address.
4. The Device drives an ACK bit ("0").
5. The Host drives a START condition.
6. The Host drives the 7-bit SMBus Address, and a "1" indicating a READ.
7. The Device drives an ACK bit "0".
8. The Device drives the 8-bit data value (register contents).
9. The Host drives a NACK bit "1"indicating end of the READ transfer.
10. The Host drives a STOP condition.
The READ transaction is completed, the bus goes IDLE and communication with other SMBus devices may now
occur.
See Table 11 for more information.
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Table 11. SMBUS Slave Mode Register Map
Address
Register Name
Bit (s) Field
Type
Default
Description
0x00
Observation,
Reset
7
Reserved
R/W
0x00
Set bit to 0.
6:3
Address Bit
AD[3:0]
R
Observation of AD[3:0] bit
[6]: AD3
[5]: AD2
[4]: AD1
[3]: AD0
2
EEPROM Read
Done
R
1: Device completed the read from external
EEPROM.
1
Reserved
R/W
Set bit to 0.
0
Reserved
R/W
0x01
PWDN Channels
7:0
PWDN CHx
R/W
0x00
Power Down per Channel
[7]: CH7 – CHA_3
[6]: CH6 – CHA_2
[5]: CH5 – CHA_1
[4]: CH4 – CHA_0
[3]: CH3 – CHB_3
[2]: CH2 – CHB_2
[1]: CH1 – CHB_1
[0]: CH0 – CHB_0
00'h = all channels enabled
FF'h = all channels disabled
Note: override PWDN pin.
0x02
Override
PWDN Control
7:1
Reserved
R/W
0x00
Set bits to 0.
0
Override PWDN
0x04
EQ Limiting
7:0
EQ Control
R/W
0x00
CH7 - CH0 EQ Limiting Control
1 = EQ Limits
0 = EQ Linear (Default)
0x05
Slave Mode CRC Bits 7:0
CRC bits
R/W
0x00
CRC bits [7:0]
0x06
Slave Register
Control
7:5
Reserved
R/W
0x10
Set bits to 0.
4
Reserved
Set bit to 1.
3
Register Enable
1: Enables high speed channel control via SMBus
registers without CRC
0: Channel control via SMBus registers requires
correct CRC in Reg 0x05
Note: In order to change VOD, DEM and EQ of the
channels in slave mode without also setting CRC
each time, set this bit to 1.
2:0
Reserved
Set bits to 0.
7
Reserved
6
Reset Registers
Self clearing reset for SMBus registers. Writing a [1]
will return register settings to default values
5
Reset SMBus
Master
Self clearing reset to SMBus master state machine
4:0
Reserved
7
Reserved
6
Override SD_TH
1: Block SD_TH pin control
0: Allow SD_TH pin control
5
Reserved
Set bit to 0.
4
Override IDLE
1: IDLE control by registers
0: IDLE control by signal detect
3
Override RXDET
1: Block RXDET pin control
0: Allow RXDET pin control
2
Override MODE
1: Block MODE pin control
0: Allow MODE pin control
1
Reserved
Set bit to 0.
0
Reserved
Set bit to 0.
0x07
0x08
Digital Reset and
Control
Override
Pin Control
Set bit to 0.
1: Block PWDN pin control
0: Allow PWDN pin control
R/W
0x01
Set bit to 0.
Set bits to 0 0001'b.
R/W
0x00
Set bit to 0.
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Table 11. SMBUS Slave Mode Register Map (continued)
0x0E
CH0 - CHB0
IDLE, RXDET
7:6
Reserved
5
IDLE_AUTO
R/W
0x00
Set bits to 0.
1: Automatic IDLE detect
0: Allow IDLE_SEL control in bit 4
Note: override IDLE control.
4
IDLE_SEL
1: Output is MUTED (electrical idle)
0: Output is ON
Note: override IDLE control.
3:2
RXDET
00: Input is high-z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times) then
stops; termination is high-z until detection; once
detected input termination is 50 Ω
10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is high-z until detection; once detected
input termination is 50 Ω
11: Input is 50 Ω
Note: override RXDET pin.
1:0
Reserved
0x0F
CH0 - CHB0
EQ
7:0
EQ Control
R/W
0x2F
IB0 EQ Control - total of 256 levels.
See Table 3.
0x10
CH0 - CHB0
VOD
7
Short Circuit
Protection
R/W
0xAD
1: Enable the short circuit protection
0: Disable the short circuit protection
6
MODE_SEL
1: PCIe Gen 1/2,
0: SAS-3 and PCIe Gen 3
Note: override the MODE pin.
5:3
Reserved
Set bits to default value - 101.
2:0
VOD Control
OB0 VOD Control
000: 0.7 V
001: 0.8 V
010: 0.9 V
011: 1.0 V
100: 1.1 V
101: 1.2 V (default)
110: 1.3 V
111: 1.4 V
7
RXDET STATUS
R
6:5
MODE_DET
STATUS
R
Observation bit for MODE_DET CH0 - CHB0.
00: GEN1 (2.5G)
01: GEN2 (5G)
11: GEN3 (8G+)
Note: Only functions when Mode pin = Automatic
4:3
Reserved
R/W
Set bits to 0.
2:0
DEM Control
R/W
OB0 DEM Control
000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
0x11
24
CH0 - CHB0
DEM
Set bits to 0.
0x02
Observation bit for RXDET CH0 - CHB0.
1: RX = detected
0: RX = not detected
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Table 11. SMBUS Slave Mode Register Map (continued)
0x12
0x15
CH0 - CHB0
IDLE Threshold
CH1 - CHB1
IDLE, RXDET
7:4
Reserved
3:2
IDLE tha
R/W
Assert threshold (1010 pattern 12 Gbps)
00 = 50 mVp-p (default)
01 = 40 mVp-p
10 = 75 mVp-p
11 = 58 mVp-p
Note: override the SD_TH pin.
1:0
IDLE thd
De-assert threshold (1010 pattern 12 Gbps)
00 = 37 mVp-p (default)
01 = 22 mVp-p
10 = 55 mVp-p
11 = 45 mVp-p
Note: override the SD_TH pin.
7:6
Reserved
5
IDLE_AUTO
1: Automatic IDLE detect
0: Allow IDLE_SEL control in bit 4
Note: override IDLE control.
4
IDLE_SEL
1: Output is MUTED (electrical idle)
0: Output is ON
Note: override IDLE control.
3:2
RXDET
00: Input is high-z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times) then
stops; termination is high-z until detection; once
detected input termination is 50 Ω
10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is high-z until detection; once detected
input termination is 50 Ω
11: Input is 50 Ω
Note: override RXDET pin.
1:0
Reserved
Set bits to 0.
R/W
0x00
0x00
Set bits to 0.
Set bits to 0.
0x16
CH1 - CHB1
EQ
7:0
EQ Control
R/W
0x2F
IB1 EQ Control - total of 256 levels.
See Table 3.
0x17
CH1 - CHB1
VOD
7
Short Circuit
Protection
R/W
0xAD
1: Enable the short circuit protection
0: Disable the short circuit protection
6
MODE_SEL
1: Gen 1/2,
0: SAS-3 and PCIe Gen 3
Note: override the MODE pin.
5:3
Reserved
Set bits to default value - 101.
2:0
VOD Control
OB1 VOD Control
000: 0.7 V
001: 0.8 V
010: 0.9 V
011: 1.0 V
100: 1.1 V
101: 1.2 V (default)
110: 1.3 V
111: 1.4 V
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Table 11. SMBUS Slave Mode Register Map (continued)
0x18
0x19
0x1C
0x1D
26
CH1 - CHB1
DEM
CH1 - CHB1
IDLE Threshold
CH2 - CHB2
IDLE, RXDET
CH2 - CHB2
EQ
7
RXDET STATUS
R
6:5
MODE_DET
STATUS
R
Observation bit for MODE_DET CH1 - CHB1.
00: GEN1 (2.5G)
01: GEN2 (5G)
11: GEN3 (8G+)
Note: Only functions when Mode pin = Automatic
4:3
Reserved
R/W
Set bits to 0.
2:0
DEM Control
R/W
OB1 DEM Control
000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
7:4
Reserved
R/W
3:2
IDLE tha
Assert threshold (1010 pattern 12 Gbps)
00 = 50 mVp-p (default)
01 = 40 mVp-p
10 = 75 mVp-p
11 = 58 mVp-p
Note: override the SD_TH pin.
1:0
IDLE thd
De-assert threshold (1010 pattern 12 Gbps)
00 = 37 mVp-p (default)
01 = 22 mVp-p
10 = 55 mVp-p
11 = 45 mVp-p
Note: override the SD_TH pin.
7:6
Reserved
5
IDLE_AUTO
1: Automatic IDLE detect
0: Allow IDLE_SEL control in bit 4
Note: override IDLE control.
4
IDLE_SEL
1: Output is MUTED (electrical idle)
0: Output is ON
Note: override IDLE control.
3:2
RXDET
00: Input is high-z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times) then
stops; termination is high-z until detection; once
detected input termination is 50 Ω
10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is high-z until detection; once detected
input termination is 50 Ω
11: Input is 50 Ω
Note: override RXDET pin.
1:0
Reserved
7:0
EQ Control
R/W
0x02
0x00
0x00
Observation bit for RXDET CH1 - CHB1.
1: RX = detected
0: RX = not detected
Set bits to 0.
Set bits to 0.
Set bits to 0.
R/W
0x2F
IB2 EQ Control - total of 256 levels.
See Table 3.
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Table 11. SMBUS Slave Mode Register Map (continued)
0x1E
0x1F
0x20
CH2 - CHB2
VOD
CH2 - CHB2
DEM
CH2 - CHB2
IDLE Threshold
7
Short Circuit
Protection
R/W
0xAD
6
MODE_SEL
1: Gen 1/2,
0: SAS-3 and PCIe Gen-3
Note: override the MODE pin.
5:3
Reserved
Set bits to default value - 101.
2:0
VOD Control
OB2 VOD Control
000: 0.7 V
001: 0.8 V
010: 0.9 V
011: 1.0 V
100: 1.1 V
101: 1.2 V (default)
110: 1.3 V
111: 1.4 V
7
RXDET STATUS
R
6:5
MODE_DET
STATUS
R
Observation bit for MODE_DET CH2 - CHB2.
00: GEN1 (2.5G)
01: GEN2 (5G)
11: GEN3 (8G)
Note: Only functions when Mode pin = Automatic
4:3
Reserved
R/W
Set bits to 0.
2:0
DEM Control
R/W
OB2 DEM Control
000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
7:4
Reserved
R/W
3:2
IDLE tha
Assert threshold (1010 pattern 12 Gbps)
00 = 50 mVp-p (default)
01 = 40 mVp-p
10 = 75 mVp-p
11 = 58 mVp-p
Note: override the SD_TH pin.
1:0
IDLE thd
De-assert threshold (1010 pattern 12 Gbps)
00 = 37 mVp-p (default)
01 = 22 mVp-p
10 = 55 mVp-p
11 = 45 mVp-p
Note: override the SD_TH pin.
0x02
0x00
1: Enable the short circuit protection
0: Disable the short circuit protection
Observation bit for RXDET CH2 - CHB2.
1: RX = detected
0: RX = not detected
Set bits to 0.
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Table 11. SMBUS Slave Mode Register Map (continued)
0x23
CH3 - CHB3
IDLE, RXDET
7:6
Reserved
5
IDLE_AUTO
R/W
0x00
Set bits to 0.
1: Automatic IDLE detect
0: Allow IDLE_SEL control in bit 4
Note: override IDLE control.
4
IDLE_SEL
1: Output is MUTED (electrical idle)
0: Output is ON
Note: override IDLE control.
3:2
RXDET
00: Input is high-z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times) then
stops; termination is high-z until detection; once
detected input termination is 50 Ω
10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is high-z until detection; once detected
input termination is 50 Ω
11: Input is 50 Ω
Note: override RXDET pin.
1:0
Reserved
0x24
CH3 - CHB3
EQ
7:0
EQ Control
R/W
0x2F
IB3 EQ Control - total of 256 levels.
See Table 3.
0x25
CH3 - CHB3
VOD
7
Short Circuit
Protection
R/W
0xAD
1: Enable the short circuit protection
0: Disable the short circuit protection
6
MODE_SEL
1: Gen 1/2,
0: SAS-3 and PCIe Gen-3
Note: override the MODE pin.
5:3
Reserved
Set bits to default value - 101.
2:0
VOD Control
OB0 VOD Control
000: 0.7 V
001: 0.8 V
010: 0.9 V
011: 1.0 V
100: 1.1 V
101: 1.2 V (default)
110: 1.3 V
111: 1.4 V
7
RXDET STATUS
R
6:5
MODE_DET
STATUS
R
Observation bit for MODE_DET CH3 - CHB3.
00: GEN1 (2.5G)
01: GEN2 (5G)
11: GEN3 (8G)
Note: Only functions when Mode pin = Automatic
4:3
Reserved
R/W
Set bits to 0.
2:0
DEM Control
R/W
OB3 DEM Control
000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
0x26
28
CH3 - CHB3
DEM
Set bits to 0.
0x02
Observation bit for RXDET CH3 - CHB3.
1: RX = detected
0: RX = not detected
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Table 11. SMBUS Slave Mode Register Map (continued)
0x27
0x28
0x2B
CH3 - CHB3
IDLE Threshold
Signal Detect Control
CH4 - CHA0
IDLE, RXDET
7:4
Reserved
3:2
IDLE tha
R/W
Assert threshold (1010 pattern 12 Gbps)
00 = 50 mVp-p (default)
01 = 40 mVp-p
10 = 75 mVp-p
11 = 58 mVp-p
Note: override the SD_TH pin.
1:0
IDLE thd
De-assert threshold (1010 pattern 12 Gbps)
00 = 37 mVp-p (default)
01 = 22 mVp-p
10 = 55 mVp-p
11 = 45 mVp-p
Note: override the SD_TH pin.
7
Reserved
6
Override Fast IDLE
Override Fast IDLE
[1]: Use values in 0x28[3:2]
[0]: Based on MODE pin
5:4
High IDLE
Enable higher range of Signal Detect Thresholds
[1]: CH0 - CH3
[0]: CH4 - CH7
3:2
Fast IDLE
Enable Fast OOB response
[1]: CH0 - CH3
[0]: CH4 - CH7
1:0
Reduced SD Gain
Enable reduced Signal Detect Gain
[1]: CH0 - CH3
[0]: CH4 - CH7
7:6
Reserved
5
IDLE_AUTO
1: Automatic IDLE detect
0: Allow IDLE_SEL control in bit 4
Note: override IDLE control.
4
IDLE_SEL
1: Output is MUTED (electrical idle)
0: Output is ON
Note: override IDLE control.
3:2
RXDET
00: Input is high-z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times) then
stops; termination is high-z until detection; once
detected input termination is 50 Ω
10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is high-z until detection; once detected
input termination is 50 Ω
11: Input is 50 Ω
Note: override RXDET pin.
R/W
R/W
0x00
0x4C
0x00
Set bits to 0.
Set bit to 0.
Set bits to 0.
1:0
Reserved
0x2C
CH4 - CHA0
EQ
7:0
EQ Control
R/W
0x2F
Set bits to 0.
IA0 EQ Control - total of 256 levels.
See Table 3.
0x2D
CH4 - CHA0
VOD
7
Short Circuit
Protection
R/W
0xAD
1: Enable the short circuit protection
0: Disable the short circuit protection
6
MODE_SEL
1: Gen 1/2,
0: SAS-3 and PCIe Gen-3
Note: override the MODE pin.
5:3
Reserved
Set bits to default value - 101.
2:0
VOD Control
OA0 VOD Control
000: 0.7 V
001: 0.8 V
010: 0.9 V
011: 1.0 V
100: 1.1 V
101: 1.2 V (default)
110: 1.3 V
111: 1.4 V
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Table 11. SMBUS Slave Mode Register Map (continued)
0x2E
0x2F
0x32
0x33
30
CH4 - CHA0
DEM
CH4 - CHA0
IDLE Threshold
CH5 - CHA1
IDLE, RXDET
CH5 - CHA1
EQ
7
RXDET STATUS
R
6:5
MODE_DET
STATUS
R
Observation bit for MODE_DET CH4 - CHA0.
00: GEN1 (2.5G)
01: GEN2 (5G)
11: GEN3 (8G)
Note: Only functions when Mode pin = Automatic
4:3
Reserved
R/W
Set bits to 0.
2:0
DEM Control
R/W
OA0 DEM Control
000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
7:4
Reserved
R/W
3:2
IDLE tha
Assert threshold (1010 pattern 12 Gbps)
00 = 50 mVp-p (default)
01 = 40 mVp-p
10 = 75 mVp-p
11 = 58 mVp-p
Note: override the SD_TH pin.
1:0
IDLE thd
De-assert threshold (1010 pattern 12 Gbps)
00 = 37 mVp-p (default)
01 = 22 mVp-p
10 = 55 mVp-p
11 = 45 mVp-p
Note: override the SD_TH pin.
7:6
Reserved
5
IDLE_AUTO
1: Automatic IDLE detect
0: Allow IDLE_SEL control in bit 4
Note: override IDLE control.
4
IDLE_SEL
1: Output is MUTED (electrical idle)
0: Output is ON
Note: override IDLE control.
3:2
RXDET
00: Input is high-z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times) then
stops; termination is high-z until detection; once
detected input termination is 50 Ω
10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is high-z until detection; once detected
input termination is 50 Ω
11: Input is 50 Ω
Note: override RXDET pin.
1:0
Reserved
7:0
EQ Control
R/W
0x02
0x00
0x00
Observation bit for RXDET CH4 - CHA0.
1: RX = detected
0: RX = not detected
Set bits to 0.
Set bits to 0.
Set bits to 0.
R/W
0x2F
IA1 EQ Control - total of 256 levels.
See Table 3.
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Table 11. SMBUS Slave Mode Register Map (continued)
0x34
0x35
0x36
CH5 - CHA1
VOD
CH5 - CHA1
DEM
CH5 - CHA1
IDLE Threshold
7
Short Circuit
Protection
R/W
0xAD
6
MODE_SEL
1: Gen 1/2,
0: SAS-3 and PCIe Gen-3
Note: override the MODE pin.
5:3
Reserved
Set bits to default value - 101.
2:0
VOD Control
OA1 VOD Control
000: 0.7 V
001: 0.8 V
010: 0.9 V
011: 1.0 V
100: 1.1 V
101: 1.2 V (default)
110: 1.3 V
111: 1.4 V
7
RXDET STATUS
R
6:5
MODE_DET
STATUS
R
Observation bit for MODE_DET CH5 - CHA1.
00: GEN1 (2.5G)
01: GEN2 (5G)
11: GEN3 (8G)
Note: Only functions when Mode pin = Automatic
4:3
Reserved
R/W
Set bits to 0.
2:0
DEM Control
R/W
OA1 DEM Control
000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
7:4
Reserved
R/W
3:2
IDLE tha
Assert threshold (1010 pattern 12 Gbps)
00 = 50 mVp-p (default)
01 = 40 mVp-p
10 = 75 mVp-p
11 = 58 mVp-p
Note: override the SD_TH pin.
1:0
IDLE thd
De-assert threshold (1010 pattern 12 Gbps)
00 = 37 mVp-p (default)
01 = 22 mVp-p
10 = 55 mVp-p
11 = 45 mVp-p
Note: override the SD_TH pin.
0x02
0x00
1: Enable the short circuit protection
0: Disable the short circuit protection
Observation bit for RXDET CH5 - CHA1.
1: RX = detected
0: RX = not detected
Set bits to 0.
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Table 11. SMBUS Slave Mode Register Map (continued)
0x39
CH6 - CHA2
IDLE, RXDET
7:6
Reserved
5
IDLE_AUTO
R/W
0x00
Set bits to 0.
1: Automatic IDLE detect
0: Allow IDLE_SEL control in bit 4
Note: override IDLE control.
4
IDLE_SEL
1: Output is MUTED (electrical idle)
0: Output is ON
Note: override IDLE control.
3:2
RXDET
00: Input is high-z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times) then
stops; termination is high-z until detection; once
detected input termination is 50 Ω
10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is high-z until detection; once detected
input termination is 50 Ω
11: Input is 50 Ω
Note: override RXDET pin.
1:0
Reserved
0x3A
CH6 - CHA2
EQ
7:0
EQ Control
R/W
0x2F
IA2 EQ Control - total of 256 levels.
See Table 3.
0x3B
CH6 - CHA2
VOD
7
Short Circuit
Protection
R/W
0xAD
1: Enable the short circuit protection
0: Disable the short circuit protection
6
MODE_SEL
1: PCIe Gen 1/2,
0: SAS-3 and PCIe Gen-3
Note: override the MODE pin.
5:3
Reserved
Set bits to default value - 101.
2:0
VOD Control
OA2 VOD Control
000: 0.7 V
001: 0.8 V
010: 0.9 V
011: 1.0 V
100: 1.1 V
101: 1.2 V (default)
110: 1.3 V
111: 1.4 V
7
RXDET STATUS
R
6:5
MODE_DET
STATUS
R
Observation bit for MODE_DET CH6 - CHA2.
00: GEN1 (2.5G)
01: GEN2 (5G)
11: GEN3 (8G)
Note: Only functions when Mode pin = Automatic
4:3
Reserved
R/W
Set bits to 0.
2:0
DEM Control
R/W
OA2 DEM Control
000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
0x3C
32
CH6 - CHA2
DEM
Set bits to 0.
0x02
Observation bit for RXDET CH6 - CHA2.
1: RX = detected
0: RX = not detected
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Table 11. SMBUS Slave Mode Register Map (continued)
0x3D
0x40
CH6 - CHA2
IDLE Threshold
CH7 - CHA3
IDLE, RXDET
7:4
Reserved
3:2
IDLE tha
R/W
Assert threshold (1010 pattern 12 Gbps)
00 = 50 mVp-p (default)
01 = 40 mVp-p
10 = 75 mVp-p
11 = 58 mVp-p
Note: override the SD_TH pin.
1:0
IDLE thd
De-assert threshold (1010 pattern 12 Gbps)
00 = 37 mVp-p (default)
01 = 22 mVp-p
10 = 55 mVp-p
11 = 45 mVp-p
Note: override the SD_TH pin.
7:6
Reserved
5
IDLE_AUTO
1: Automatic IDLE detect
0: Allow IDLE_SEL control in bit 4
Note: override IDLE control.
4
IDLE_SEL
1: Output is MUTED (electrical idle)
0: Output is ON
Note: override IDLE control.
3:2
RXDET
00: Input is high-z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times) then
stops; termination is high-z until detection; once
detected input termination is 50 Ω
10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is high-z until detection; once detected
input termination is 50 Ω
11: Input is 50 Ω
Note: override RXDET pin.
1:0
Reserved
Set bits to 0.
R/W
0x00
0x00
Set bits to 0.
Set bits to 0.
0x41
CH7 - CHA3
EQ
7:0
EQ Control
R/W
0x2F
IA3 EQ Control - total of 256 levels.
See Table 3.
0x42
CH7 - CHA3
VOD
7
Short Circuit
Protection
R/W
0xAD
1: Enable the short circuit protection
0: Disable the short circuit protection
6
MODE_SEL
1: PCIe Gen 1/2,
0: SAS-3 and PCIe Gen-3
Note: override the MODE pin.
5:3
Reserved
Set bits to default value - 101.
2:0
VOD Control
OA3 VOD Control
000: 0.7 V
001: 0.8 V
010: 0.9 V
011: 1.0 V
100: 1.1 V
101: 1.2 V (default)
110: 1.3 V
111: 1.4 V
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Table 11. SMBUS Slave Mode Register Map (continued)
0x43
0x44
0x51
34
CH7 - CHA3
DEM
CH7 - CHA3
IDLE Threshold
Device ID
7
RXDET STATUS
R
6:5
MODE_DET
STATUS
R
Observation bit for MODE_DET CH7 - CHA3.
00: GEN1 (2.5G)
01: GEN2 (5G)
11: GEN3 (8G)
Note: Only functions when Mode pin = Automatic
4:3
Reserved
R/W
Set bits to 0.
2:0
DEM Control
R/W
OA3 DEM Control
000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
7:4
Reserved
R/W
3:2
IDLE tha
Assert threshold (1010 pattern 12 Gbps)
00 = 50 mVp-p (default)
01 = 40 mVp-p
10 = 75 mVp-p
11 = 58 mVp-p
Note: override the SD_TH pin.
1:0
IDLE thd
De-assert threshold (1010 pattern 12 Gbps)
00 = 37 mVp-p (default)
01 = 22 mVp-p
10 = 55 mVp-p
11 = 45 mVp-p
Note: override the SD_TH pin.
7:5
VERSION
4:0
ID
R
0x02
0x00
0x65
Observation bit for RXDET CH7 - CHA3.
1: RX = detected
0: RX = not detected
Set bits to 0.
011'b
00101'b
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APPLICATIONS INFORMATION
GENERAL RECOMMENDATIONS
The DS125BR800A is a high performance circuit capable of delivering excellent performance. Careful attention
must be paid to the details associated with high-speed design as well as providing a clean power supply. Refer
to the information below and Revision 4 of the LVDS Owner's Manual for more detailed information on high
speed design tips to address signal integrity design issues.
SAS-3 and PCIe Gen-3 PLACEMENT WITHIN CHANNEL
SAS-3 and PCIe Gen-3 interfaces implement a training sequence between connected Tx and Rx pairs. While the
DS125BR800A circuitry is designed to be transparent for this training sequence and protocol, it is optimized for
receiver equalization. This linear equalization maximizes interconnect channel extension when the
DS125BR800A is placed with the majority of channel loss on the DS125BR800A input side. Adjustable transmit
de-emphasis and output voltage amplitude help to compensate for the remaining channel attenuation on the
output side.
When working with SAS-3 applications the maximum recommended input channel loss is -24 dB @ 6 GHz.
PCB LAYOUT CONSIDERATIONS FOR DIFFERENTIAL PAIRS
The CML inputs and outputs have been optimized to work with interconnects using a controlled differential
impedance of 85 - 100Ω. It is preferable to route differential lines exclusively on one layer of the board,
particularly for the input traces. The use of vias should be avoided if possible. If vias must be used, they should
be used sparingly and must be placed symmetrically for each side of a given differential pair. Whenever
differential vias are used the layout must also provide for a low inductance path for the return currents as well.
Route the differential signals away from other signals and noise sources on the printed circuit board. See AN1187 for additional information on QFN (WQFN) packages.
To minimize the effects of crosstalk, a 5:1 ratio or greater should be maintained between inter-pair and intra-pair
spacing.
20 mils
EXTERNAL MICROSTRIP
100 mils
20 mils
INTERNAL STRIPLINE
VDD
VDD
18 17 16 15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
19
54
20
53
21
52
51
22
BOTTOM OF PKG
23
VDD
50
GND
24
49
25
48
26
47
27
46
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
VDD
VDD
Figure 7. Typical Routing Options
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Figure 7 depicts different transmission line topologies which can be used in various combinations to achieve the
optimal system performance. Impedance discontinuities at the differential via can be minimized or eliminated by
increasing the swell around each hole and providing for a low inductance return current path. When the via
structure is associated with thick backplane PCB, further optimization such as back drilling is often used to
reduce the detrimental high frequency effects of stubs on the signal path.
POWER SUPPLY BYPASSING
Two approaches are recommended to ensure that the DS125BR800A is provided with an adequate power
supply. First, the supply (VDD) and ground (GND) pins should be connected to power planes routed on adjacent
layers of the printed circuit board. The layer thickness of the dielectric should be minimized so that the VDD and
GND planes create a low inductance supply with distributed capacitance. Second, careful attention to supply
bypassing through the proper use of bypass capacitors is required. A 0.1 μF bypass capacitor should be
connected to each VDD pin such that the capacitor is placed as close as possible to the DS125BR800A. Smaller
body size capacitors can help facilitate proper component placement. Additionally, capacitor with capacitance in
the range of 1 μF to 10 μF should be incorporated in the power supply bypassing design as well. These
capacitors can be either tantalum or an ultra-low ESR ceramic.
36
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Typical Performance Curves Characteristics
640.0
1021
VDD = 2.625V
620.0
T = 25°C
VDD = 2.5V
600.0
VDD = 2.375V
1019
560.0
VOD (mVp-p)
PD (mW)
580.0
540.0
520.0
500.0
1016
1013
480.0
T = 25oC
460.0
1010
440.0
420.0
0.8
0.9
1
1.1
1.2
1007
2.375
1.3
2.5
2.625
VOD (Vp-p)
VDD (V)
Figure 8. Power Dissipation (PD) vs. Output Differential
Voltage (VOD)
Figure 9. Output Differential Voltage (VOD = 1.0 Vp-p) vs.
Supply Voltage (VDD)
1020
VDD = 2.5 V
VOD (mVp-p)
1018
1016
1014
1012
- 40
-15
10
35
60
85
TEMPERATURE (°C)
Figure 10. Output Differential Voltage (VOD = 1.0 Vp-p) vs. Temperature
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Typical Performance Eye Diagrams Characteristics
Pattern
Generator
TL
Lossy Channel
VID = 1.0 Vp-p,
DE = 0 dB
PRBS15
IN
DS125BR800A
OUT
Scope
BW = 60 GHz
Figure 11. Test Setup Connections Diagram
Figure 12. TL = 10 inch 5–mil FR4 trace, 5 Gbps
DS125BR800A settings: EQ[1:0] = 0, F = 02'h, DEM[1:0] = 0, 1
38
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Typical Performance Eye Diagrams Characteristics (continued)
Figure 13. TL = 10 inch 5–mil FR4 trace, 8 Gbps
DS125BR800A settings: EQ[1:0] = 0, F = 02'h, DEM[1:0] = 0, 1
Figure 14. TL = 10 inch 5–mil FR4 trace, 12 Gbps
DS125BR800A settings: EQ[1:0] = 0, R = 01'h, DEM[1:0] = 0, 1
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DS125BR800A
SNLS467 – NOVEMBER 2013
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Typical Performance Eye Diagrams Characteristics (continued)
Figure 15. TL = 20 inch 5–mil FR4 trace, 5 Gbps
DS125BR800A settings: EQ[1:0] = 0, 1 = 03'h, DEM[1:0] = 0, 1
Figure 16. TL = 20 inch 5–mil FR4 trace, 8 Gbps
DS125BR800A settings: EQ[1:0] = 0, 1 = 03'h, DEM[1:0] = 0, 1
40
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DS125BR800A
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SNLS467 – NOVEMBER 2013
Typical Performance Eye Diagrams Characteristics (continued)
Figure 17. TL = 20 inch 5–mil FR4 trace, 12 Gbps
DS125BR800A settings: EQ[1:0] = 0, 1 = 03'h, DEM[1:0] = 0, 1
Figure 18. TL = 30 inch 5–mil FR4 trace, 5 Gbps
DS125BR800A settings: EQ[1:0] = R, 0 = 07'h, DEM[1:0] = 0, 1
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DS125BR800A
SNLS467 – NOVEMBER 2013
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Typical Performance Eye Diagrams Characteristics (continued)
Figure 19. TL = 30 inch 5–mil FR4 trace, 8 Gbps
DS125BR800A settings: EQ[1:0] = R, 0 = 07'h, DEM[1:0] = 0, 1
Figure 20. TL = 30 inch 5–mil FR4 trace, 12 Gbps
DS125BR800A settings: EQ[1:0] = R, 0 = 07'h, DEM[1:0] = 0, 1
42
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DS125BR800A
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SNLS467 – NOVEMBER 2013
Typical Performance Eye Diagrams Characteristics (continued)
Figure 21. TL1 = 5-meter 30-AWG 100 Ohm Twin-axial Cable, 12 Gbps
DS125BR800A settings: EQ[1:0] = R, 0 = 07'h, DEM[1:0] = 0, 1
Figure 22. TL1 = 8-meter 30-AWG 100 Ohm Twin-axial Cable, 12 Gbps
DS125BR800A settings: EQ[1:0] = R, 1 = 0F'h, DEM[1:0] = 0, 1
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DS125BR800A
SNLS467 – NOVEMBER 2013
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Typical Performance Eye Diagrams Characteristics (continued)
Pattern
Generator
VID = 1.0 Vp-p,
DE = 0 dB
PRBS15
TL1
Lossy Channel
IN
DS125BR800A
TL2
Lossy Channel
OUT
Scope
BW = 60 GHz
Figure 23. Test Setup Connections Diagram
Figure 24. TL1 = 20 inch 5–mil FR4 trace, TL2 = 10 inch 5–mil FR4 trace, 5 Gbps
DS125BR800A settings: EQ[1:0] = 0, 1 = 03'h, DEM[1:0] = R, 0
44
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DS125BR800A
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SNLS467 – NOVEMBER 2013
Typical Performance Eye Diagrams Characteristics (continued)
Figure 25. TL1 = 20 inch 5–mil FR4 trace, TL2 = 10 inch 5–mil FR4 trace, 8 Gbps
DS125BR800A settings: EQ[1:0] = R, 1 = 03'h, DEM[1:0] = R, 0
Figure 26. TL1 = 20 inch 5–mil FR4 trace, TL2 = 10 inch 5–mil FR4 trace, 12 Gbps
DS125BR800A settings: EQ[1:0] = R, 1 = 03'h, DEM[1:0] = R, 0
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PACKAGE OPTION ADDENDUM
www.ti.com
28-Nov-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
DS125BR800ANJYR
ACTIVE
WQFN
NJY
54
2000
Green (RoHS
& no Sb/Br)
CU SN
Level-2-260C-1 YEAR
DS125BR800A
DS125BR800ANJYT
ACTIVE
WQFN
NJY
54
250
Green (RoHS
& no Sb/Br)
CU SN
Level-2-260C-1 YEAR
DS125BR800A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
28-Nov-2013
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
28-Nov-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
DS125BR800ANJYR
WQFN
NJY
54
2000
330.0
16.4
5.8
10.3
1.0
12.0
16.0
Q1
DS125BR800ANJYT
WQFN
NJY
54
250
178.0
16.4
5.8
10.3
1.0
12.0
16.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
28-Nov-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
DS125BR800ANJYR
WQFN
NJY
54
2000
367.0
367.0
38.0
DS125BR800ANJYT
WQFN
NJY
54
250
213.0
191.0
55.0
Pack Materials-Page 2
PACKAGE OUTLINE
NJY0054A
WQFN
SCALE 2.000
WQFN
5.6
5.4
B
A
PIN 1 INDEX AREA
0.5
0.3
0.3
0.2
10.1
9.9
DETAIL
OPTIONAL TERMINAL
TYPICAL
0.8 MAX
C
SEATING PLANE
2X 4
SEE TERMINAL
DETAIL
3.51±0.1
19
(0.1)
27
28
18
50X 0.5
7.5±0.1
2X
8.5
1
45
54
PIN 1 ID
(OPTIONAL)
46
54X
54X
0.5
0.3
0.3
0.2
0.1
0.05
C A
C
B
4214993/A 07/2013
NOTES:
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
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EXAMPLE BOARD LAYOUT
NJY0054A
WQFN
WQFN
(3.51)
SYMM
54X (0.6)
54
54X (0.25)
SEE DETAILS
46
1
45
50X (0.5)
(7.5)
SYMM
(9.8)
(1.17)
TYP
2X
(1.16)
28
18
( 0.2) TYP
VIA
19
27
(1) TYP
(5.3)
LAND PATTERN EXAMPLE
SCALE:8X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
METAL
SOLDER MASK
OPENING
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
(PREFERRED)
METAL
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4214993/A 07/2013
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, refer to QFN/SON PCB application note
in literature No. SLUA271 (www.ti.com/lit/slua271).
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EXAMPLE STENCIL DESIGN
NJY0054A
WQFN
WQFN
SYMM
METAL
TYP
(0.855) TYP
46
54
54X (0.6)
54X (0.25)
1
45
50X (0.5)
(1.17)
TYP
SYMM
(9.8)
12X (0.97)
18
28
19
27
12X (1.51)
(5.3)
SOLDERPASTE EXAMPLE
BASED ON 0.125mm THICK STENCIL
EXPOSED PAD
67% PRINTED SOLDER COVERAGE BY AREA
SCALE:10X
4214993/A 07/2013
NOTES: (continued)
5. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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